2N6714 2N6715
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N6726 2N6727 UNITS
Collector-Base Voltage VCBO 40 50 V
Collector-Emitter Voltage VCEO 30 40 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 2.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 1.0 W
Power Dissipation (TC=25°C) PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JA 125 °C/W
Thermal Resistance JC 62.5 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 0.1 μA
IEBO V
EB=5.0V 0.1 μA
BVCBO I
C=1.0mA, (2N6714, 2N6726) 40 V
BVCBO I
C=1.0mA, (2N6715, 2N6727) 50 V
BVCEO I
C=10mA, (2N6714, 2N6726) 30 V
BVCEO I
C=10mA, (2N6715, 2N6727) 40 V
BVEBO I
E=1.0mA 5.0 V
VCE(SAT) I
C=1.0A, IB=0.1A 0.5 V
VBE(ON) V
CE=1.0V, IC=1.0A 1.2 V
hFE V
CE=1.0V, IC=0.1A 60
hFE V
CE=1.0V, IC=1.0A 50 250
fT V
CE=10V, IC=50mA, f=20MHz 50 500 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 30 pF
2N6714 2N6715 NPN
2N6726 2N6727 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6714, 2N6726
series types are complementary silicon plastic power
transistors designed for general purpose power
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-237 CASE
R1 (31-July 2012)
www.centralsemi.com
2N6714 2N6715 NPN
2N6726 2N6727 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
TO-237 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (31-July 2012)
