VS-10RIA Series
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Medium Power Phase Control Thyristors
(Stud Version), 10 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dIF/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
ELECTRICAL SPECIFICATIONS
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with tp 5 ms
PRIMARY CHARACTERISTICS
IT(AV) 10 A
VDRM/VRRM 100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
VTM 1.75 V
IGT 60 mA
TJ-65 °C to +125 °C
Package TO-48 (TO-208AA)
Circuit configuration Single SCR
TO-48 (TO-208AA)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
10 A
TC85 °C
IT(RMS) 25 A
ITSM
50 Hz 225 A
60 Hz 240
I2t50 Hz 255 A2s
60 Hz 233
VDRM/VRRM 100 to 1200 V
tqTypical 110 μs
TJ-65 to +125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE (1)
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE (2)
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-10RIA
10 100 150 20
20 200 300
10
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
VS-10RIA Series
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Note
•t
q = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
Note
(1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 10RIA120S90
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 10 A
85 °C
Maximum RMS on-state current IT(RMS) 25 A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ =TJ maximum
225
A
t = 8.3 ms 240
t = 10 ms 100 % VRRM
reapplied
190
t = 8.3 ms 200
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
255
A2s
t = 8.3 ms 233
t = 10 ms 100 % VRRM
reapplied
180
t = 8.3 ms 165
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 2550 A2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.10 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.39
Low level value of
on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 24.3
m
High level value of
on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 16.7
Maximum on-state voltage VTM Ipk = 32 A, TJ = 25 °C, tp = 10 ms sine pulse 1.75 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 130 mA
Typical latching current IL200
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise
of turned-on current
VDRM 600 V
dIF/dt
TJ = TJ maximum, VDM = Rated VDRM
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
ITM = (2 x rated dI/dt) A
200
A/μs
VDRM 800 V 180
VDRM 1000 V 160
VDRM 1600 V 150
Typical turn-on time tgt TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C 0.9
μs
Typical reverse recovery time trr TJ = TJ maximum,
ITM = IT(AV), tp > 200 μs, dIF/dt = - 10 A/μs 4
Typical turn-off time tq
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V,
dIF/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM,
gate bias 0 V to 100 W
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage dV/dt TJ = TJ maximum linear to 100 % rated VDRM 100 V/μs
TJ = TJ maximum linear to 67 % rated VDRM 300 (1)
VS-10RIA Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current IGM TJ = TJ maximum 1.5 A
Maximum peak negative gate voltage -VGM TJ = TJ maximum 10 V
DC gate current required to trigger IGT
TJ = -65 °C
Maximum required gate trigger
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
90
mATJ = 25 °C 60
TJ = 125 °C 35
DC gate voltage required to trigger VGT
TJ = -65 °C 3.0
VTJ = 25 °C 2.0
TJ = 125 °C 1.0
DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated value 2.0 mA
DC gate voltage not to trigger VGD TJ = TJ maximum,
VDRM = Rated value
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
0.2 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and
storage temperature range TJ, TStg -65 to +125 °C
Maximum thermal resistance,
junction to case RthJC DC operation 1.85
K/W
Maximum thermal resistance,
case to heat sink RthCS Mounting surface, smooth, flat and greased 0.35
TO NUT TO DEVICE
Mounting torque Lubricated threads
(Non-lubricated threads)
20 (27.5) 25 lbf in
0.23 (0.32) 0.29 kgf · m
2.3 (3.1) 2.8 N · m
Approximate weight 14 g
0.49 oz.
Case style See dimensions - link at the end of datasheet TO-48 (TO-208AA)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.44 0.32
TJ = TJ maximum K/W
120° 0.53 0.56
90° 0.68 0.75
60° 1.01 1.05
30° 1.71 1.73
VS-10RIA Series
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
40
50
60
70
80
90
100
110
120
130
0 2 4 6 8 1012141618
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
10RIA Series
R (DC) = 1.85 K/W
thJC
40
50
60
70
80
90
100
110
120
130
0 5 10 15 20 25 30
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
10RIA Series
R (DC) = 1.85 K/W
thJC
0 255075100125
Maximum Allowable Ambient Temperature (°C)
10K/W
7K/W
5K/W
4K/W
3K/W
2K/W
R=1K/W-DeltaR
thS
A
0
5
10
15
20
25
30
35
024681012141618
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
10RIA Series
T = 125°C
J
0255075100125
Maximum Allowable Ambient Temperature (°C)
10K/W
7K/W
5K
/W
4K/W
3K/W
2K/W
R=1K
/W-DeltaR
th
SA
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
10RIA Series
T = 125°C
J
VS-10RIA Series
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
90
100
110
120
130
140
150
160
170
180
190
200
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Peak Half Sine Wave On-state Current (A)
10RIA Series
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
80
100
120
140
160
180
200
220
240
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
10RIA Series
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
10RIA Series
T = 1 2 5 ° C
J
T = 2 5 ° C
J
0.1
1
10
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
Steady State Value
R = 1.85 K/W
(DC Operation)
thJC
10RIA Series
VS-10RIA Series
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
tr<=1 µs, tp >= 6 µs
rated di/dt : 10V, 20ohms
<=30% rated di/dt : 10V, 65ohms
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
tr <=0.5 µs, tp >= 6 µs
(3) (4)
Tj = -65 °C
Tj = 25 °C
Tj = 125 °C
10RIA Series Frequency Limited by PG(AV)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95333
2- Current code
1- Vishay Semiconductors product
4- Voltage code x 10 = VRRM (see Voltage Ratings table)
5- None = stud base TO-48 (TO-208AA) 1/4" 28UNF-2A
M = stud base TO-48 (TO-208AA) M6 x 1
6- Critical dV/dt:
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
3- Essential part number
Device code
5 61 32 4
10VS- RIA 120 M S90
Outline Dimensions
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TO-208AA (TO-48)
DIMENSIONS in millimeters (inches)
1/4"-28UNF-2A
For metric device M6 x 1
45°
Ø 3.9/4.1
(Ø 0.15/0.16)
Ø 15.5
(Ø 0.61)
Ø 1.7/1.8
(Ø 0.06/0.07)
12.8 max.
(0.5 max.)
22.2 max..
(0.87 max.)
30.2 max.
(0.18 max.)
3.1/3.3
(0.12/0.13)
1.24/1.44
(0.04/0.05)
10.7/11.5
(0.42/0.45)
Across flats
13.8/14.3
(0.54/0.56)
A
Note:
A = Anode
C = Cathode
G = Gate
C
G
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