©2004 Fairchild Semiconductor Corporation Rev. B, March 2004
FQP8N60C/FQPF8N60C
QFET
®
FQP8N60C/FQPF8N60C
600V N-Ch anne l MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 7.5A, 600V, R
DS(on)
= 1.2Ω @V
GS
= 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maxim u m Ratin gs
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter FQP8N60C FQPF8N60C Units
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current - Continuous (T
C
= 25°C) 7.5 7.5 * A
- Continuous (T
C
= 100°C) 4.6 4.6 * A
I
DM
Drain Current - Pulsed
(Note 1)
30 30 * A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
230 mJ
I
AR
Avalanche Current
(Note 1)
7.5 A
E
AR
Repetitive Avalanche Energy
(Note 1)
14.7 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C) 147 48 W
- Derate above 25°C 1.18 0.38 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQP8N60C FQPF8N60C Units
R
θJC
Thermal Resistance, Junction-to-Case 0.85 2.6 °C/W
R
θCS
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220
FQP Series
GSD
TO-220F
FQPF Series
GS
D
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▲
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!!
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◀
◀◀
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S
D
G
Rev. B, March 2004
FQP8N60C/FQPF8N60C
©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, I
AS
= 7.5 A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 7.5A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA600 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= 250 µA, Referenced to 25°C -- 0.7 -- V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 600 V, V
GS
= 0 V -- -- 1 µA
V
DS
= 480 V, T
C
= 125°C -- -- 10 µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteri st ics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA2.0 -- 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance V
GS
= 10 V, I
D
= 3.75 A -- 1.0 1.2 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 3.75 A
(Note 4)
-- 8.7 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 965 1255 pF
C
oss
Output Capacitance -- 105 135 pF
C
rss
Reverse Transfer Capacitance -- 12 16 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 300 V, I
D
= 7.5A,
R
G
= 25 Ω
(Note 4, 5)
-- 16.5 45 ns
t
r
Turn-On Rise Time -- 60.5 130 ns
t
d(off)
Turn-Off Delay Time -- 81 170 ns
t
f
Turn-Off Fall Time -- 64.5 140 ns
Q
g
Total Gate Charge V
DS
= 480 V, I
D
= 7.5A,
V
GS
= 10 V
(Note 4, 5)
-- 28 36 nC
Q
gs
Gate-Source Charge -- 4.5 -- nC
Q
gd
Gate-Drain Charge -- 12 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 7.5 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 30 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 7.5 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 7.5 A,
dI
F
/ dt = 100 A/µs
(Note 4)
-- 365 -- ns
Q
rr
Reverse Recovery Charge -- 3.4 -- µC
Rev. B, March 2004©2004 Fairchild Semiconductor Corporation
FQP8N60C/FQPF8N60C
0 5 10 15 20 25 30
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
Note : I
※
D
= 8A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
0.20.40.60.81.01.21.4
10
-1
10
0
10
1
150
℃
Not es :
※
1. V
GS
= 0V
2. 250µ s Pulse Test
25
℃
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
0 5 10 15 20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
= 20V
V
GS
= 10V
Note : T
※
J
= 25
℃
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Cha rac te ri st ics Figure 6. Gate Char ge Character is tics
Figure 3. On-Resistance Variat ion vs
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation with Sour ce Curr ent
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egio n Character i st ics
10
-1
10
0
10
1
10
-1
10
0
10
1
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :
※
1. 250µ s Pulse Test
2. TC
= 25
℃
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
※
1. VDS = 40V
2. 250µ s Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
1600
1800
2000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
※
1. V
GS
= 0 V
2. f = 1 MHz
Crss
C
oss
Ciss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
Rev. B, March 2004
FQP8N60C/FQPF8N60C
©2004 Fairchild Semiconductor Corporation
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
10
µ
s
DC
10 ms
100
µ
s
Operation i n This Area
is Limited by R
DS(on)
Notes :
※
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Singl e Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
µ
s
100 ms
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R DS(on)
Notes :
※
1. TC
= 25 o
C
2. TJ
= 150 o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
(Continued)
Figure 9 -1. M ax imum Safe O per at in g Are a
for FQP8N60C
Figure 10. Maximu m Drain Current
vs Case Temperat ure
Figu re 7. Br ea kdown Vol tage Va ri at i on
vs Temperature Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Ma xi m um Saf e O perating Area
for FQPF8N60C
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
※
1. V
GS
= 0 V
2. I
D
= 250 µ A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
※
1. V
GS
= 10 V
2. I
D
= 4 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
25 50 75 100 125 150
0
2
4
6
8
I
D
, Drain Current [A]
T
C
, Case Temperature [ ]
℃
Rev. B, March 2004
FQP8N60C/FQPF8N60C
©2004 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
※
1. Z
θJC
(t) = 0.85 /W M ax.
℃
2. D uty Facto r, D =t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
sin g le pu ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t
1
, Square W ave Pulse Duration [sec]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
※
1. Z
θJC
(t) = 2.6 /W M a x.
℃
2. Duty Factor, D =t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t
1
, Square W ave Pulse Duration [sec]
Typical Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FQP8N60C
Figure 11 -2 . Tr ansient The rm al Respon se C urve for FQ PF8N60C
t
1
P
DM
t
2
t
1
P
DM
t
2
Rev. B, March 2004
FQP8N60C/FQPF8N60C
©2004 Fairchild Semiconductor Corporation
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & W aveforms
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=LI
AS2
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
L
I
D
t
p
E
AS
=LI
AS2
----
2
1
E
AS
=LI
AS2
----
2
1
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
LL
I
D
I
D
t
p
Rev. B, March 2004
FQP8N60C/FQPF8N60C
©2004 Fairchild Semiconductor Corporation
Peak Diode R ecovery dv /dt Test Circuit & Waveform s
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
Rev. B, March 2004
FQP8N60C/FQPF8N60C
©2004 Fairchild Semiconductor Corporation
Package Dimensions
4.50 ±0.20
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30 18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30 +0.10
–0.05
0.50 +0.10
–0.05
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
TO-220
Dimensions in Millimeters
Rev. B, March 2004
FQP8N60C/FQPF8N60C
©2004 Fairchild Semiconductor Corporation
Package Dimensions
(Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification P rodu ct Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I9
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