NTE2510 Silicon NPNTransistor High Frequency Video Output Features: D High Gain Bandwidth Product: fT = 2GHz D High Current Capacity: IC = 500mA Applications: D High-Definition CRT Display Video Output D Wide-Band Amp Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 20V, IE = 0 - - 0.1 A Emitter Cutoff Current IEBO VEB = 2V, IC = 0 - - 5.0 A DC Current Gain hFE VCE = 5V, IC = 50mA 60 - 120 VCE = 5V, IC = 500mA 20 - - VCE = 5V, IC = 100mA - 2.0 - Gain Bandwidth Product fT GHz Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance Cob VCB = 10V, f = 1MHz - 6.0 - pF Reverse Transfer Capacitance Cre VCB = 10V, f = 1MHz - 4.6 - pF Collector-Emitter Saturation Voltage VCE(sat) IC = 300mA, IB = 30mA - 0.3 0.8 V Base-Emitter Saturation Voltage VBE(sat) IC = 300mA, IB = 30mA - 0.9 1.2 V .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4)