NTE2510
Silicon NPNTransistor
High Frequency Video Output
Features:
DHigh Gain Bandwidth Product: fT = 2GHz
DHigh Current Capacity: IC = 500mA
Applications:
DHigh–Definition CRT Display Video Output
DWide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Base Voltage, VCBO 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–to–Emitter Voltage, VCEO 20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–to–Base Voltage, VEBO 3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 1000mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, PC
TA = +25°C 1.3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 20V, IE = 0 – – 0.1 µA
Emitter Cutoff Current IEBO VEB = 2V, IC = 0 – – 5.0 µA
DC Current Gain hFE VCE = 5V, IC = 50mA 60 – 120
VCE = 5V, IC = 500mA 20 – –
Gain Bandwidth Product fTVCE = 5V, IC = 100mA – 2.0 – GHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance Cob VCB = 10V, f = 1MHz –6.0 –pF
Reverse Transfer Capacitance Cre VCB = 10V, f = 1MHz –4.6 –pF
Collector–Emitter Saturation Voltage VCE(sat) IC = 300mA, IB = 30mA –0.3 0.8 V
Base–Emitter Saturation Voltage VBE(sat) IC = 300mA, IB = 30mA –0.9 1.2 V
ECB
.315 (8.0) .130
(3.3)
.295
(7.5)
.433
(11.0)
.610
(15.5)
.118 (3.0)
Dia
.094 (2.4)
