30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
Page 1 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM2030-BD
Ultra Wide Band Driver Amplifier
Low Gain Ripple
Positive Gain Slope
12.0 dB Small Signal Gain
+16.0 dBm P1dB Compression Point
+27.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
Features Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)1
+12.0 VDC
375 mA
-5V
+23.0 dBm
-65 to +165 ºC
-55 to +85 ºC
+175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)3
Output Return Loss (S22)3
Small Signal Gain (S21)3
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)2
Output Third Order Intermods (OIP3)2
Saturated Output Power (Psat)2
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=5.0V, Vg=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
0.00003
10.0
10.0
9.0
-
-
-
-
-
-
-1.5
-
Typ.
-
15.0
18.0
12.0
+/-1.0
35.0
+16.0
+27.0
+19.0
5.0
-0.5
100
Max.
30.0
-
-
-
-
-
-
-
-
8.0
0.0
150
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
(2) Optional high power bias Vd=8.0V will typically yield 2-3 dB increase in P1dB, Psat and OIP3.
(3) Unless otherwise indicated, Min./Max. over 2.0-30.0 GHz and biased at Vd=5.0V.
Mimix Broadband’s distributed 30 kHz-30 GHz GaAs
MMIC distributed amplifier has a small signal gain of
12.0 dB with a +16.0 dBm P1dB output compression
point. This MMIC uses Mimix Broadband’s GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Test
Instrumentation, Military, Space, Microwave
Point-to-Point Radio, SATCOM and VSAT applications.
General Description
May 2010 - Rev 07-May-10
30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
Page 2 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM2030-BD
Distributed Amplifier Measurements (On Wafer)
May 2010 - Rev 07-May-10
CMM2030-BD, Vd=5.0 V (64 devices, 8 wafers)
13
14
15
16
17
CMM2030 Vd=5.0 V (64 devices, 8 wafers)
18 0
19.0
20.0
21.0
22.0
B (dBm)
7
8
9
10
11
12
13
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 32.0 36.0
Gain (dB)
12.0
13.0
14.0
15.0
16.0
17.0
18
.
0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0
F (GH )
Output Power P1d
Frequency (GHz)
Max Median Mean Min
CMM2030-BD, Vd=5.0 V (56 devices, 7 wafers)
-20
-15
-10
-5
0
s
(dB)
CMM2030-BD, Vd=5.0 V (56 devices, 7 wafers)
-25
-20
-15
-10
-5
0
s
(dB)
F
requency
(GH
z
)
Max Median Mean Min
-55
-50
-45
-40
-35
-30
-25
-20
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 32.0 36.0
Input Return Los
s
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 32.0 36.0
Output Return Los
s
Frequency (GHz)
Max Median Mean -3sigma
Frequency (GHz)
Max Median Mean -3sigma
30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
Page 3 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM2030-BD
Distributed Amplifier Measurements (Test Fixture)
May 2010 - Rev 07-May-10
CMM2030-BD Vd=5.0 V, Id=100 mA
12
13
14
15
16
d
B)
CMM2030-BD Vd=8.0 V, Id=100 mA
12
13
14
15
16
d
B)
6
7
8
9
10
11
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Gain (
d
6
7
8
9
10
11
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Gain (
d
+85 Deg C -40 deg C +25 Deg C +85 Deg C -40 deg C +25 Deg C
CMM2030-BD Vd=5.0 V, Id=100 mA
-40
-30
-20
-10
0
lation (dB)
CMM2030-BD Vd=8.0 V, Id=100 mA
-40
-30
-20
-10
0
o
lation (dB)
-90
-80
-70
-60
-50
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Reverse Iso
-90
-80
-70
-60
-50
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Reverse Is
o
+85 Deg C -40 Deg C +25 Deg C +85 Deg C -40 Deg C +25 Deg C
CMM2030-BD Vd=5.0 V, Id=100 mA
-35
-30
-25
-20
-15
-10
-5
0
u
rn Loss (dB)
CMM2030-BD Vd=8.0 V, Id=100 mA
-35
-30
-25
-20
-15
-10
-5
0
u
rn Loss (dB)
-70
-65
-60
-55
-50
-45
-40
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Input Ret
u
+
85
D
eg C
-4
0
D
eg C
+2
5
D
eg C
-70
-65
-60
-55
-50
-45
-40
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Input Ret
u
+
85
D
eg C
-4
0
D
eg C
+2
5
D
eg C
85 eg C
0 eg C
5 eg C
85 eg C
0 eg C
5 eg C
30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
Page 4 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM2030-BD
Distributed Amplifier Measurements (Test Fixture) (cont.)
May 2010 - Rev 07-May-10
CMM2030-BD Vd=5.0 V, Id=100 mA
-30
-25
-20
-15
-10
-5
0
Loss (dB)
CMM2030-BD Vd=8.0 V, Id=100 mA
-30
-25
-20
-15
-10
-5
0
Loss (dB)
-70
-65
-60
-55
-50
-45
-40
-35
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Output Return
-70
-65
-60
-55
-50
-45
-40
-35
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Output Return
+85 Deg C -40 Deg C +25 Deg C +85 Deg C -40 Deg C +25 Deg C
CMM2030-BD Vd=5.0 V, Id=100 mA
8
9
10
11
12
13
14
15
u
re (dB)
CMM2030-BD Vd=8.0 V, Id=100 mA
8
9
10
11
12
13
14
15
re (dB)
0
1
2
3
4
5
6
7
8
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Noise Fig
u
0
1
2
3
4
5
6
7
8
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Noise Figu
+85 Deg C -40 deg C +25 Deg C +85 Deg C -40 deg C +25 Deg C
CMM2030-BD Vd=5.0 V, Id=100 mA
2
0
21
22
23
24
25
26
27
Psat (dBm)
CMM2030-BD Vd=8.0 V, Id=100 mA
20
21
22
23
24
25
26
27
Psat (dBm)
12
13
14
15
16
17
18
19
0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Output Power
12
13
14
15
16
17
18
19
20
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Output Power
+85 Deg C -40 Deg C +25 Deg C +85 Deg C -40 Deg C +25 Deg C
30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
Page 5 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM2030-BD
Distributed Amplifier Measurements (Test Fixture) (cont.)
May 2010 - Rev 07-May-10
CMM2030-BD Vd=5.0 V, Id=100 mA
16
17
18
19
20
21
22
P
1dB (dBm)
CMM2030-BD Vd=8.0 V, Id=100 mA
16
17
18
19
20
21
22
P
1dB (dBm)
8
9
10
11
12
13
14
15
1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0
Frequency (GHz)
Output Power
P
8
9
10
11
12
13
14
15
1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0
Frequency (GHz)
Output Power
P
+85 Deg C -40 Deg C +25 Deg C +85 Deg C -40 Deg C +25 Deg C
CMM2030-BD Vd=5.0 V, Id=100 mA
26
27
28
29
30
31
32
33
e
r Intercept (dBm)
CMM2030-BD Vd=8.0 V, Id=100 mA
26
27
28
29
30
31
32
33
e
r Intercept (dBm)
18
19
20
21
22
23
24
25
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Output Third Ord
e
+85 Deg C
40 Deg C
+25 Deg C
18
19
20
21
22
23
24
25
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0
Frequency (GHz)
Output Third Ord
e
85 D C
40 D C
25 D C
+85 Deg C
-
40 Deg C
+25 Deg C
+
85 D
eg
C
-
40 D
eg
C
+
25 D
eg
C
CMM2030-BD Vd=5.0 V, Id=100 mA
38
39
40
41
42
43
44
r
der Intercept (dBm)
CMM2030-BD Vd=8.0 V, Id=100 mA
38
39
40
41
42
43
44
r
der Intercept (dBm)
32
33
34
35
36
37
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
Frequency (GHz)
Output Second O
r
+85 Deg C
-
40 Deg C
+25 Deg C
32
33
34
35
36
37
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
Frequency (GHz)
Output Second O
r
+
85 Deg C
-
40 Deg C
+
25 Deg C
+85 Deg C
40 Deg C
+25 Deg C
85 Deg C
40 Deg C
25 Deg C
30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM2030-BD
May 2010 - Rev 07-May-10
Page 6 of 8
Mechanical Drawing
Bias Arrangement Bypass Capacitors - See App Note [2]
(Note: Engineering designator is M366)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC and RF Bond Pads are ~0.080 x 0.080 (0.003 x 0.003).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.73 mg.
Bond Pad #1 (RF In+Vg)
Bond Pad #2 (EXT)
Bond Pad #3 (RF Out+Vd)
Bond Pad #4 (EXT)
1.150
(0.045)
3
0.448
(0.018)
2.420
(0.095)
0.0
0.0
0.734
(0.029)
2.327
(0.092)
4
1
1.058
(0.042)
2
RF In
(Vg)
RF Out
(Vd)
3
4
1
2
RF In
(Vg)
RF Out
(Vd)
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/
finite element analysis done at Mimix Broadband. The values shown here are only to be used as a guideline against the end application requirements
and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the
practical aspects, i.e. thermal material stack-up, attach method of device placement are the key parts in determining overall reliability for a specific
application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your
operating limits please contact technical sales for additional information.
CMM2030-BD Vd=5.0 V, Id=100 mA
1 0E+09
CMM2030-BD Vd=5.0 V, Id=100 mA
1 00E+00
1.0E+07
1.0E+08
1
.
0E+09
MTTF (hours)
1 00E
-
03
1.00E-02
1.00E-01
1
.
00E+00
FITS
1.0E+06
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
1.00E-04
1
.
00E 03
55 65 75 85 95 105 115 125
Baseplate Temperature (deg C)
CMM2030-BD Vd=5.0 V, Id=100 mA
140
80
90
100
110
120
130
Tch (deg C)
60
70
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM2030-BD
May 2010 - Rev 07-May-10
Page 7 of 8
App Note [1] Biasing - As shown in the bonding diagram, this device
is operated with a single drain and gate voltage via RF Out and RF In,
respectively. Bias is nominally Vd=5.0V and Id=100mA. It is
recommended to use active biasing to keep the currents constant as
the RF power and temperature vary; this gives the most reproducible
results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a
low power operational amplifier, with a low value resistor in series with
the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is 0.5V. Typically
the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to
ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (EXT1,2) need to have DC bypass capacitance (117 pF, 560 pF, 0.33 uF)
as close to the device as possible.
30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM2030-BD
May 2010 - Rev 07-May-10
Page 8 of 8
Handling and Assembly Information
Part Number for Ordering Description
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. he gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
CMM2030-BD-000V RoHS compliant die packed in vacuum release gel packs
PB-CMM2030-BD-0000 CMM2030-BD evaluation module
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
