2N4400, 2N4401 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Version 2004-01-20 Power dissipation - Verlustleistung 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 2N4400, 2N4401 Collector-Emitter-voltage B open VCE0 40 V Collector-Base-voltage E open VCE0 60 V Emitter-Base-voltage C open VEB0 6V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) IC 600 mA Junction temp. - Sperrschichttemperatur Tj 150C Storage temperature - Lagerungstemperatur TS - 55...+ 150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - - - - 400 mV 750 mV VBEsat VBEsat 750 mV - - - 950 mV 1.2 V ICBV - - 100 nA IEBV - - 100 nA Collector saturation volt. - Kollektor-Sattigungsspannung IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat VCEsat Base saturation voltage - Basis-Sattigungsspannung IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Collector cutoff current - Kollektorreststrom VCE = 35 V, VEB = 0.4 V Emitter cut-off current - Emitterreststrom VCE = 35 V, VEB = 0.4 V 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 34 General Purpose Transistors 2N4400, 2N4401 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 1 V, IC = 0.1 mA 2N4401 hFE 20 - - VCE = 1 V, IC = 1 mA 2N4400 2N4401 hFE hFE 20 40 - - - - VCE = 1 V, IC = 10 mA 2N4400 2N4401 hFE hFE 40 80 - - - - VCE = 1 V, IC = 150 mA 2N4400 2N4401 hFE hFE 50 100 - - 150 300 VCE = 1 V, IC = 500 mA 2N4400 2N4401 hFE hFE 20 40 - - - - Small signal current gain Kleinsignal-Stromverstarkung hfe 40 Input impedance - Eingangs-Impedanz hie 1 kS - 15 kS Output admittance - Ausgangs-Leitwert hoe 1 S - 30 S Reverse voltage ratio - Spannungsruckwirkg. hre 0.1 *10-4 - 8 *10-4 fT fT 200 MHz 250 MHz - - - - - - 6.5 pF CEB0 - - 30 pF ton td tr toff ts tf - - - - - - - - - - - - 35 ns 15 ns 20 ns 255 ns 225 ns 30 ns h-Parameters at VCE = 10 V, IC = 1 mA, f = 1 kHz - 500 Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 20 mA, f = 100 MHz 2N4400 2N4401 Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 1 RthA 200 K/W 1) 2N4402, 2N4403 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 35