DF2S5M4CT
1
ESD Protection Diodes Silicon Epitaxial Planar
DF2S5M4CT
DF2S5M4CT
DF2S5M4CT
DF2S5M4CT
Start of commercial production
2016-12
1.
1.
1.
1. General
General
General
General
The DF2S5M4CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device
interfaces and other applications to protect against static electricity and noise.
Utilizing snapback characteristics, the DF2S5M4CT provides low dynamic resistance and superior protective
performance.
Furthermore, it is optimum the high speed signal application for the low capacitance performance. The
DF2S5M4CT is housed in an ultra-compact package (1.0 mm × 0.6 mm) to meet applications that require a small
footprint.
2.
2.
2.
2. Applications
Applications
Applications
Applications
Mobile Equipment
Smartphones
Tablets
Notebook PCs
Desktop PCs
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
3.
3.
3.
3. Features
Features
Features
Features
(1) Suitable for use with a 3.3 V signal line. (VRWM 3.6 V)
(2) Protects devices with its high ESD performance.
(VESD = ±20 kV (Contact / Air) @IEC61000-4-2)
(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(RDYN = 0.3 (typ.))
(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(VC = 8 V@IPP = 2 A (typ.))
(5) Compact package is suitable for use in high density board layouts such as in mobile devices.
(1.0 mm × 0.6 mm size (Nickname: CST2))
4.
4.
4.
4. Packaging
Packaging
Packaging
Packaging
CST2
2018-01-25
Rev.3.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S5M4CT
2
5.
5.
5.
5. Example of Circuit Diagram
Example of Circuit Diagram
Example of Circuit Diagram
Example of Circuit Diagram
6.
6.
6.
6. Quick Reference Data
Quick Reference Data
Quick Reference Data
Quick Reference Data
Characteristics
Working peak reverse voltage
Total capacitance
Dynamic resistance
Electrostatic discharge voltage
(IEC61000-4-2) (Contact)
Symbol
VRWM
Ct
RDYN
VESD
Note
(Note 1)
(Note 2)
(Note 3)
Test Condition
VR = 0 V, f = 1 MHz
Min
Typ.
0.35
0.3
Max
3.6
0.5
20
Unit
V
pF
kV
Note 1: Recommended operating condition.
Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.
Note 3: Criterion: No damage to devices.
2018-01-25
Rev.3.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S5M4CT
3
6.1.
6.1.
6.1.
6.1. ESD Clamp Waveform (Note)
ESD Clamp Waveform (Note)
ESD Clamp Waveform (Note)
ESD Clamp Waveform (Note)
Fig.
Fig.
Fig.
Fig. 6.1.1
6.1.1
6.1.1
6.1.1 +8 kV
+8 kV
+8 kV
+8 kV Fig.
Fig.
Fig.
Fig. 6.1.2
6.1.2
6.1.2
6.1.2 -8 kV
-8 kV
-8 kV
-8 kV
Fig.
Fig.
Fig.
Fig. 6.1.3
6.1.3
6.1.3
6.1.3 +15 kV
+15 kV
+15 kV
+15 kV Fig.
Fig.
Fig.
Fig. 6.1.4
6.1.4
6.1.4
6.1.4 -15 kV
-15 kV
-15 kV
-15 kV
Fig.
Fig.
Fig.
Fig. 6.1.5
6.1.5
6.1.5
6.1.5 IEC61000-4-2 (Contact)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Contact)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2018-01-25
Rev.3.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S5M4CT
4
6.2.
6.2.
6.2.
6.2. TLP Characteristics (Note)
TLP Characteristics (Note)
TLP Characteristics (Note)
TLP Characteristics (Note)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
6.3.
6.3.
6.3.
6.3. Clamp Voltage - Peak Pulse Current (V
Clamp Voltage - Peak Pulse Current (V
Clamp Voltage - Peak Pulse Current (V
Clamp Voltage - Peak Pulse Current (VC
C
C
C - I
- I
- I
- IPP
PP
PP
PP) (Note)
) (Note)
) (Note)
) (Note)
Fig.
Fig.
Fig.
Fig. 6.3.1
6.3.1
6.3.1
6.3.1 V
V
V
VC
C
C
C - I
- I
- I
- IPP
PP
PP
PP Fig.
Fig.
Fig.
Fig. 6.3.2
6.3.2
6.3.2
6.3.2 Based on IEC61000-4-5 8/20
Based on IEC61000-4-5 8/20
Based on IEC61000-4-5 8/20
Based on IEC61000-4-5 8/20 µ
µ
µ
µs pulse.
s pulse.
s pulse.
s pulse.
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2018-01-25
Rev.3.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S5M4CT
5
7.
7.
7.
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Electrostatic discharge voltage (IEC61000-4-2) (Contact)
Electrostatic discharge voltage (IEC61000-4-2) (Air)
Peak pulse power (tp = 8/20 µs)
Peak pulse current (tp = 8/20 µs)
Junction temperature
Storage temperature
Symbol
VESD
PPK
IPP
Tj
Tstg
Note
(Note 1)
(Note 2)
Rating
±20
±20
30
2
150
-55 to 150
Unit
kV
W
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
8.
8.
8.
8. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
VRWM: Working peak reverse voltage
VBR: Reverse breakdown voltage
IBR: Reverse breakdown current
IR: Reverse current
VC: Clamp voltage
IPP: Peak pulse current
RDYN: Dynamic resistance
VF: Forward voltage
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Characteristics
Working peak reverse voltage
Total capacitance
Dynamic resistance
Reverse breakdown voltage
Reverse current
Clamp voltage
Symbol
VRWM
Ct
RDYN
VBR
IR
VC
Note
(Note 1)
(Note 2)
(Note 3)
(Note 2)
Test Condition
VR = 0 V, f = 1 MHz
IBR = 1 mA
VRWM = 3.6 V
IPP = 1 A
IPP = 2 A
ITLP = 16 A
ITLP = 30 A
Min
3.7
Typ.
0.35
0.3
4.3
6
8
14
18
Max
3.6
0.5
5.5
0.1
Unit
V
pF
V
µA
V
V
Note 1: Recommended operating condition.
Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.
Note 3: Based on IEC61000-4-5 8/20 µs pulse.
2018-01-25
Rev.3.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S5M4CT
6
9.
9.
9.
9. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 9.1
9.1
9.1
9.1 I - V
I - V
I - V
I - V Fig.
Fig.
Fig.
Fig. 9.2
9.2
9.2
9.2 I
I
I
IR
R
R
R - V
- V
- V
- VR
R
R
R
Fig.
Fig.
Fig.
Fig. 9.3
9.3
9.3
9.3 C
C
C
Ct
t
t
t - V
- V
- V
- VR
R
R
RFig.
Fig.
Fig.
Fig. 9.4
9.4
9.4
9.4 S21 - f
S21 - f
S21 - f
S21 - f
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2018-01-25
Rev.3.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S5M4CT
7
10.
10.
10.
10. Internal Circuit
Internal Circuit
Internal Circuit
Internal Circuit
1: Cathode
2: Anode
11.
11.
11.
11. Marking (Top view)
Marking (Top view)
Marking (Top view)
Marking (Top view)
12.
12.
12.
12. Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Unit: mm
Unit: mm
Unit: mm
Unit: mm
2018-01-25
Rev.3.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S5M4CT
8
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 0.7 mg (typ.)
Package Name(s)
Nickname: CST2
2018-01-25
Rev.3.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
DF2S5M4CT
9
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA".
Hardware, software and systems described in this document are collectively referred to as "Product".
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
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PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
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EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE").
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("UNINTENDED USE").
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Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products
(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and
regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all
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Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
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TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2018-01-25
Rev.3.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation