DISCRETE SEMICONDUCTORS DATA SHEET 1PS301 High-speed double diode Product specification Supersedes data of 1996 Oct 04 Philips Semiconductors 1999 May 06 PHILIPSPhilips Semiconductors Product specification | High-speed double diode 1PS301 eee ee re ee FEATURES DESCRIPTION PINNING Very small plastic SMD package The 1P8301 consists of two PIN DESCRIPTION ; itch ; high-speed switching diodes with High switching speed: max. 4 ns gn-sp g 9 . SP common cathodes, fabricated in 1 anode (a1) * Continuous reverse voltage: planar technology, and encapsulated 2 anode (a2) max. 80 V in the very small rectangular plastic 3 common cathode Repetitive peak reverse voltage: SMD SC70-3 package. max. 85 V Repetitive peak forward current: max. 500 mA. H 2 HH: APPLICATIONS High-speed switching in e.g. 2 Crri} 1 surface mounted circuits. 3 Top view MAMO8+ Marking code: B3. Fig.1 Simplified outline (SOT323; SC70-3) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134}. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Verm repetitive peak reverse - 85 V voltage Vr continuous reverse voltage - 80 Vv lr continuous forward current single diode loaded; note 1; see Fig.2 | 250 mA double diode loaded; note 1; see Fig.2 | 160 mA lFRM repetitive peak forward current 500 mA lFSm non-repetitive peak forward square wave; Tj = 25 C prior to surge current t=1us _ 4 A t=1s - 0.5 A Prot total power dissipation Tamb = 25 C; note 1 - 300 mW T sig storage temperature 65 +150 C T; junction temperature 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 06 2Philips Semiconductors Product specification High-speed double diode 1PS301 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode Ve forward voltage see Fig.3 le=1mA 610 - mV lF=10 mA 740 mV IF =50 mA - 1.0 Vv IF =100 mA 1.2 Vv IR reverse current see Fig.4 VRa=25V 30 nA Va=80V - 0.5 LA Vp = 25 V; Tj) = 150 C - 30 LA Vr = 80 V; T) = 150 C - 100 LA Cq diode capacitance f= 1 MHz; Vp = 0; see Fig.6 = 1.5 pF ber reverse recovery time when switched from lp =10 mAto | 4 ns Ip = 10 mA; R, = 100 Q; measured at Ip = 1 mA; see Fig.6 Vir forward recovery voltage when switched from Ip = 10 mA; 1.75 V t, = 20 ns; see Fig.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Ruth j-tp thermal resistance from junction to tle-point 200 KAN Ri j-a thermal resistance from junction to ambient note 1 415 KAN Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 06Philips Semiconductors Product specification High-speed double diode 1PS301 GRAPHICAL DATA 300 MBG444 300 MBG382 | IF nay (mA) 200 200 100 100 Qo 0 0 100 Tamb C) 200 Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 Maximum permissible continuous forward current as a function of ambient 0 1 Ve vy) 2 (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.8 Forward current as a function of forward 0 100 7; (C) 200 (1) Vg = 80 V; maximum values. (2) Vq = 80 V; typical values. (3) Va = 25 V; typical values. Fig.4 Reverse current as a function of junction temperature. temperature. voltage. 1 02 MBG380 08 MBG446 IR og (HA) (PF) 10 0.6 1 04 10"! 02 10? 0 0 4 8 12 16 Vp) f= 1 MHz; 7) = 25C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1999 May 06Philips Semiconductors Product specification High-speed double diode 1PS301 a | ) tp pe tp L I | = : | 10% Rg = 502 | bt bpp om} ee SAMPLING ' OSCILLOSCOPE + _ V=VptiexRg R,=502 a 90% (1) | R MGABBi input signal output signal (1) Ig=1 mA. Fig.6 Reverse recovery voltage test circuit and waveforms. ly 1kQ 450 Q Lt Lt | 90% Rg= 50 2 OSCILLOSCOPE v4 D.U.T. r | R,=50 2 | 10% MGABE2 | 1 Fig.7 Forward recovery voltage test circuit and waveforms. ! ip Ip input signal output signal 1999 May 06Philips Semiconductors Product specification High-speed double diode 1PS301 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 rr | | | 1 y | 3 t Q t A | AY _ +f a c 1 2 ' } [eq] > i | <b] w ad] B | lp +] + 0 1 2mm bap ppp scale DIMENSIONS (mm are the original dimensions) Ay UNIT | A max | OP c D E e e He | Lp Q v w 14 04 | 025] 22 | 1.35 22 | 045 | 0.23 mm os | os | oto] 18 | 145 | 13 | 88] 30 J ois | o13 | 9? | 2? REFERENCES OUTLINE ORCL CTION ISSUE DATE VERSION IEC JEDEC EIAJ SOT323 SC-70 a 97-02-28 1999 May 06 6Philips Semiconductors Product specification High-speed double diode 1PS301 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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