Rugged Power MOSFETs File Number 2168 Avalanche Energy Rated N-Channel Power MOSFETs 8.1A, and 6.5A, 275, 250V Tos (on) = 0.452, 0.680 Features: a Single pulse avalanche energy rated a SOA is power-dissipation limited wu Nanosecond switching speeds a Linear transfer characteristics a High input impedance uw 275, 250V rating - 120V AC line system operation The IRF634, IRF635, IRF636, and !RF637 are advanced power MOSFETs designed, tested, and guaranteed to with- stand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhance- ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, switch- ing converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. All types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings IRF634, IRF635, IRF636, IRF637 N-CHANNEL ENHANCEMENT MODE Ss 92cS- 42658 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE jd }_ DRAIN == (FLANGE) | | DRAIN -__ SS _ 7 TOP VIEW GATE 92CS-39528 JEDEC TO-220AB Parameter IRF634 | IRF635 | IRF636 | IRF637 Units Vos Drain - Source Voltage 250 250 275 275 Vv Voar Drain - Gate Voltage (Ras = 20 KQ) 250 250 275 275 Vv Ip @ Tc = 25C Continuous Drain Current 8.1 65. 8.1 6.5 A lb @ Tc = 100C Continuous Drain Current 5.1 41 5.1 41 A lom Pulsed Drain Current @ 32 26 32 26 A Ves Gate - Source Voltage +20 Vv Po @ Tc = 25C Max. Power Dissipation 75 Ww Linear Derating Factor 0.6 w/c Eas Single Pulse Avalanche Energy Rating @ 180 mj Ty Operating Junction and Testa Storage Temperature Range 55 to 150 C Lead Temperature 300 [0.063 in. (1.6mm) from case for 10s] C 6-117Rugged Power MOSFETs IRF634, IRF635 IRF636, IRF637 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) P. at Type Min. | Typ. | Max. | Units Test Conditions BVpss Drain - Source Breakdown Voltage | IRF636 _ _ =0V IRF637 276 Vv Ves = 0 IFIF634 - = 250uA IFIF635 250 Vv lp = 250y Vesun Gate Threshold Voltage ALL 2.0 - 4.0 Vv Vos = Vas, lo = 250uA Icss__ Gate-Source Leakage Forward ALL _ = 500 nA Ves = 20V lass _ Gate-Source Leakage Reverse ALL = _ -500 nA Vas = 20V loss Zero Gate Voltage Drain Current ALL _ _ 250 HA Vos = Max. Rating, Vas = OV , = = 1000 | wA Vos = Max. Rating x 0.8, Ves = OV, Tc = 125C loo + On-State Drain Current @ IFIF634 mress | ) | | | A Vos > loon X Rostenmax, Ves = 10V {RF635 65 _ _ A IFIF637 . Roston Static Drain-Source On-State IRF634 Resistance @ ress | | 092 | 045 | . . IRF6S5 Ves = 10V, ln = 4.1A IRE637 - 048 | 0.68 Q Qs Forward Transconductance @ ALL 29 43 = S(Q) | Vos > lotion X Rosiommax, lo = 4.1 Cus Input Capacitance ALL _ 600 _ pF = - - Coss Output Capacitance ALL 180 pF ad ee 25V, f= 1.0 MHz Crs Reverse Transfer Capacitance ALL _ 52 _ pF 9- toon _Turn-On Delay Time ALL = 9.1 14 ns Voo = 90V, Ip = 5.0A, Zn = 152 t Rise Time ALL _ 23 35 ns See Fig. 17 tam Turn-Off Delay Time ALL = 31 47 ns (MOSFET switching times are essentially te Fall Time ALL = 19 29 ns independent of operating temperature.) Q, Total Gate Charge ALL _ 24 35 nc Vas = 10V, Ip = 12A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qg, _ Gate-Source Charge ALL = 5.1 77 nC | .essentiaily independent of operating Qye__ Gate-Drain (Miller) Charge ALL - 12 18 nc | temperature.) Lo Internal Drain Inductance ALL - 45 - nH Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal device > center of die. inductances. Ls Internal Source Inductance ALL _ 75 _- nH Measured from the source lead, 6mm (0.25 in.) from us package to source bonding pad. 269 ez08d Thermal Resistance RunJC Junction-to-Case ALL _ = 1.67 | C/W RinCS Case-to-Sink ALL = 05 __| C/W _} Mounting surface flat, smooth, and greased. RinJA_ Junction-to-Ambient ALL _ = 80 C/W _| Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFE34 _ 8.1 A Modified MOSFET symbol (Body Diode) IRF636 ~~ - showing the integral IRF635 reverse P-N junction rectifier. inFes7 | | | &5 | A Ism Pulse Source Current IRF634 _ 32 A 6 (Body Diode) @ IRF636 _ IRF635 wc uae inFes7_ | | | 26 | A Vso__ Diode Forward Voltage @ ALL - = 2.0 Vv Tc = 25C, Is = 8.1A, Vas = OV te Reverse Recovery Time ALL 92 180 390 ns Ts = 150C, Ir = 8.1A, dle/dt = 100A/us Qaa___ Reverse Recovered Charge ALL 0.63 1.3 2.7 pC Ts = 150C, Ir = 8.1A, dle/dt = 100A/ys | ton Forward Turn-on Time ALL Intrinsic turn-on time is negligibie. Turn-on speed is substantially controtied by Ls + Lo. Ty = 25C to 150C. @ Pulse Test: Pulse width = 300us, Duty Cycle <= 2%. Repetitive Rating: Puise width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = SOV, starting T, = 25C, L = 4.5MH, Ros = 252, Ipeak = 8.1A. See figures 14, 15. 6-118Rugged Power MOSFETs Ip, DRAIN CURRENT (AMPERES) Ip. ORAIN CURRENT (AMPERES) wo a Sv 25 50 100 Vos. DRAIN-TO-SOURCE VOLTAGE {VOLTS} Fig. 1 Typical Output Characteristics 5Vv 2 4 8 Vog, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Ip. ORAIN CURRENT (AMPERES) tp. DRAIN CURRENT (AMPERES) IRF634, IRF635 IRF636, IRF637 oO Ty * 150C Ty = 260C 9 2 4 6 8 10 Vgg GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics 102 5 BY Ros (ON) 10 Te = 25C 2) Ty = 150C SINGLE PULSE 1 ? 10 102 103 Vpg-. DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.1 Fig. 4 Maximum Safe Operating Area 6-119Rugged Power MOSFETs IRF634, IRF635 IRF636, IRF637 10 THERMAL RESPONSE (Zenuc) oO - Qo ! mj 1074 1073 5 a TS etd je-t2 NOTES: 1. DUTY FACTOR, D=t,/t5 10-2 0.4 1. 10 t4. RECTANGULAR PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 10 80rs PULSE TEST Yos 7 2 X Veg | 2260 7 2259C | = o T= 150C TRANSCONDUCTANCE (SIEMENS) ts. 5 3 6 9 12 15 Ip. ORAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current 0S Oo 95 BVpsg. ORAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMAL IZED) 75 60-40 -20 0 20 49 60 80 100 120 140 160 Ty. JUNCTION TEMPERATURE { C) Fig. 8 Breakdown Voltage Vs. Temperature 6-120 102 5 Ipaq. REVERSE DRAIN CURRENT (AMPERES) w De O4 0.8 tL is an Vgp. SOUACE-TO-ORAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage ~ a % DRAIN-TO-SOUACE ON RESISTANCE (NOAMAL IZED) Ros (on) - Yog = 10V 0 -60 ~-40 -20 0 20 40 60 80 100 120 140 160 Ty, JUNCTION TEMPERATURE ( C) Fig. 9 Normalized On-Resistance Vs. TemperatureRugged Power MOSFETs IRF634, IRF635 IRF636, IRF637 1500 65 OYE c Coe + fgg. Cae SHORTED = oe * gd <as a 1200 rss "99 a Coss * Cas # Cys Cgg / gg + Cog! = c Cue # C wW & ds * &gg 3 300 z Ww 9 = 5 8 uo c a 3 a 600 a o . - Ye w w 300 3 g > FOR TEST CIRCUIT 0 SEE FIGURE 16 } s 10 2 5 102 Q 10 20 30 40 50 Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qg. TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Fig. 11 Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 4a s we ut QO Zz < S oa , m3 ~ wi a Ww w a Ww z a a = 2 z IRF634, s 2 oO wa o @ 2 > - 9 z z a < a a a ar) 3 Cc gs wo oO a 5 0 3 a 16 24 32 ag 25 50 75 100 125 150 Ip. ORAIN CURRENT (AMPERES) Tc. CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature BVpss Vos _~ os y - VARY tp TO OBTAIN REQUIRED PEAK 11, DUT azCS-42659 Fig. 14 Unclamped Energy Test Circuit ADJUST Ry TO OBTAIN SPECIFIED ip OuT PULSE GENERATOR ro-ccrn T0 SCOPE oor HIGH FREQUENCY SHUNT L Fig. 16 Switching Time Test Circuit 9208-42660 Fig. 15 Unclamped Energy Waveforms , a CURRENT REGULATOR O ISOLATED SUPPLY} SAME TYPE ev AS OUT, BATTERY 'g CURRENT = CURRENT SHUNT SHUNT Fig. 17 Gate Charge Test Circuit 6-121