09-18-514-7813 - HARTING TECHNOLOGY GROUP

HN3C51F

2014-03-01

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN3C51F

Audio Frequency General Purpose Amplifier Applications

z High voltage : VCEO = 120V

z High hFE : hFE = 200 to 700

z Excellent hFE linearity

: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristic Symbol Rating Unit

Collector-base voltage VCBO 120 V

Collector-emitter voltage VCEO 120 V

Emitter-base voltage VEBO 5 V

Collector current IC 100 mA

Base current IB 20 mA

Collector power dissipation PC* 300 mW

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating. Power dissipation per element should not exceed 200mW.

Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)

Characteristic Symbol

Test

Circuit Test Condition Min Typ. Max Unit

Collector cut-off current ICBO ― V

CB = 120V, IE = 0 ― ― 0.1 μA

Emitter cut-off current IEBO ― V

EB = 5V, IC = 0 ― ― 0.1 μA

DC current gain hFE ― V

CE = 6V, IC = 2mA 200 ― 700

Collector-emitter saturation voltage VCE ― I

C = 10mA, IB = 1mA ― ― 0.3 V

Transition frequency fT ― V

CE = 6V, IC = 1mA ― 100 ― MHz

Collector output capacitance Cob ― V

CB = 10V, IE = 0, f = 1MHz ― 3.0 ― pF

Noise figure NF ― VCE = 6 V, IC = 0.1 mA

f = 1 kHz, RG = 10 kΩ ― 1.0 ― dB

Note: hFE Classification GR(G): 200~400, BL (L): 350~700 ( ) Marking Symbol.

Marking Equivalent Circuit

(Top View)

1.COLLECTOR1

2.EMITTER1

3.COLLECTOR2

4.EMITTER2

5.BASE2

6.BASE1

(C1)

(E1)

(C2)

(E2)

(B2)

(B1)

JEDEC ―

JEITA ―

TOSHIBA 2-3N1B

Weight: 0.015g (Typ.)

Unit: mm

Type Name

hFE Rank

654

Start of commercial production

2000-03

HN3C51F

2014-03-01

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in this document, and related hardware, software and systems (collectively "Product") without notice.

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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

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for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the

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diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

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