SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- September 1997
FEATURES:
Low VF
High Current Capability
APPLICATIONS:
DC - DC converters
Mobile telecomms
PCMCIA
PARTMARK DETAIL: ZS5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR40 V
Forward Current (Continuous) IF500 mA
Forward Voltage @ IF =500mA V
F550 mV
Average Peak Forward Current; D.C. = 50% IFAV 1000 mA
Non Repetitive Forward Current t100µs
t10ms
IFSM 6.75
3A
A
Power Dissipation at Tamb
=25°C P
tot 330 mW
Storage Temperature Range Tstg -55 to + 150 ° C
Junction Temperature Tj125 ° C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage V(BR)R 40 60 V IR= 200µA
Forward Voltage VF270
300
370
465
550
640
810
440
300
350
460
550
670
780
1050
mV
mV
mV
mV
mV
mV
mV
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
IF= 500mA, Tamb
=100°C*
Reverse Current IR15 40 µAVR=30V
Diode Capacitance CD20 pF f= 1MHz,VR= 25V
Reverse Recovery
Time trr 10 ns switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle 2%.
ZHCS500
1
3
C
1
A
3
2
SOT23
0
1101000
0
0
VF- Forward Voltage (V)
IF vVF
1m
IF- Forward Current (A)IF(av) - Avg Fwd Cur (A)
0
TC- Case Temperature (°C)
IF(av) v TC
Ta- Ambient Temp (°C)
125
65
VR- Reverse Voltage (V)
Tav VR
IR- Reverse Current (A)
1n
VR- Reverse Voltage (V)
IRv VR
PF(av) - Avg Pwr Diss (W)
0
IF(av) - Avg Fwd Curr (A)
PF(av) v IF(av)
CD- Diode Capacitance (pF)
90
0
VR - Reverse Voltage (V)
CDv VR
-55°C
+25°C
DC
D=0.5
95
p
t
1
t
1
D=t /t pIF(pk)
IF(av) =DxI F(pk)
Tj=125°C
F(av)
PF(av)
=I xV F
P
I
t1
F(pk)
=DxI
F(av)
=I
F(av)
F(av)
F
xV
F(pk)
p
t
/t
D=t 1I
p
D=0.2
D=0.05
Rth=100° C/W
Rth=200°C/W
Rth=300°C/W 50
0.6
0.2
0.4
0.1
0.2
0.3
0.4
0.1 0.2 0.3 0.4 0.5 0.6
10m
100m
1
0.1 0.2 0.3 0.4 0.5
10n
100n
1u
10u
100u
1m
10m
100m
10 20 30 40
+125°C
+125°C
+100°C
+50°C
+25°C
-55°C
DC
DC=0.5
DC=0.2
DC=0.1
DC=0.05
10 20 30 40
100 105 110 115 120 125
D=0.1
ZHCS500
TYPICAL CHARACTERISTICS
ZHCS500
TYPICAL CHARACTERISTICS
Pulse Width (s)
RTHj-a (°C/W)
0
100u
t
p
p
1
1/t
D=t
t
1m 10m 100m 1 10 100
100
200
300
Single Pulse
D=0.2
D=0.1
D=0.05
D=0.5
D=1