mw OL De 38750481 0017286 4 [ 3875081 G E SOLID STATE O1E 17286 D -33-3) Darlington Power Transistors BDX34, BDX34A, BDX34B, BDX34C, BDX34D 10-Ampere P-N-P Darlington Power Transistors 48-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A (BDX34, BDX34A) Gain of 750 at 3 A (BDX34B, BDX34C, BOX34D) Features: Applications: = Operates from IC without predriver = Power switching = Low leakage at high temperature == Hammer drivers = Series and shunt regulators Audio amplifiers The BDX34, BDX34A, BDX34B, BDX34C, and BDX34D are monolithic p-n-p silicon Darlington transistors designed for low- and medium-frequency power applica- tions. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. They are complementary to the BDX33, BDX33A, BDX33B, BDX33C, and BDX33D described in RCA Bulletin File No. 693. These devices are supplied in the JEDEC TO-220AB (VERSAWATT) plastic package. MAXIMUM RATINGS, Absolute-Maximum Values: BDX34 BDX34A BDX34B BDX34C BDX34D File Number 694 TEAMINAL DESIGNATIONS | (FLANGE) QC Top vIEw 2.5k2 92068-39969 JEDEC TO-220AB #(20N 92cs-22750 Fig. 1 - Schematic diagram for all types, VOBO vieereeeeevene vee taeeesereeneeernnes 45 -60 ~80 -100 = _-120 Voenr(sus) (RBE)=100 1 we ceceenreveerereeeenveneen -45 -60 -80 -100 -120 VGEO(SUS) occ eee eee dee nene ee eenanes -45 -60 -80 ~100 ~120 Vcex(sus) Veer-15V -4 -60 -80 -100 ~120 VEBO -erceeenece -5 IGeereeres seeeenes -10 TBicrececeeeer ener eecreeerece ~0.25 Pr ToS BEPC vesranee eben eerenrereevesses 70 To > 26C Derate linearly 0.56 Tyg: Ty sesereecn eens -65 to +150 Th - At distances = 1/8 in. (3.17 mm) from case for 10s max. ..5s- pevereere 235O1 a | 3875081 OOl2287 & fr 3875081 G E SOLID STATE 1 rt ee SE G7287 OTe BSB) Darlington Power Transistors at air tay A es BDX34, BDX34A, BDX34B, BDX34C, BDX34D ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25C Uniess Otherwise Specified . TEST CONDITIONS LIMITS CUR- CHARAC- VOLTAGE RENT BDX34 BDX34A BDX34B8 | UNITS TERISTIC Vde Adc Vosj Vce | Vee Io | Min. | Max.] Min. | Max.) Min. | Max -40 -{-{[--[-] )-05 IcEO -30 }] |] 4-05} -| - -20 | |-05/ | -}| | -40 ~{j-] | | -10 To=100C ~30 _ - |} -10) -20 | -10] - ~80 |-- _ - |] -t] mA IcBo -60 ~}/}]-~-]-+} -] = ~45 {-1}; {|-|--/] - -80 -|}!~-}]-t-] -] -5 To=100C -60 _ _ -_ -5 _ ~ 45 - L-5]-}|j}|-| - lEBO 5 0 |-10}/ |-10] | -10 VcEa(sus) 70,18 | -45 | | -60| | -80}; VcER(sus} (Rge)=100 0 -0.18 | -45 | | -60} | -80] | v VoeEvisus) 1.5 | -1.08[ -45 | |] -60 ][ | -80} he 3 SPP Pm pm mY OT { -3 -48 | 750; | 750| | | VBE -3 -3a | | | |] |-25 -3 -4a } |-25| [-25] | VcE(sat) v Ig=-0.006 A -3? _ _ - _ | -25 =-0.008 A -4a | |-25| |-25}| | | VE -8 |-4{[J]-4) | -4 : Kfe (121.0 kHz) ~5 -1 1000; |1000/ | 1000; Ihfe| (f=1,0 MHz) ~5 -1 20 - 20 - 20 - > {S/o -20 35] |-35||-35/| , tp=0.5s non-rep. -33 =i ~ -1 -1 Rese V178[ [17a], | 1.78fecw *Pulsed: Pulse duration=300 us, duty factor=+1.8%. I 289 me ae ooOL DEM 3475081 0o0172548 4 i 3875081 GE SOLID STATE _ O1E 17288 3 7T-333) Darlington Power Transistors BDX34, BDX34A, BDX34B, BDX34C, BDX34D ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25C Unless Otherwise Specitied co CHARACTERISTIC VOLTAGE CURRENT | BDX34C BDX34D JU Min. | Max, | Min. | Max. ICEO To=100C icBo To=100C sus CER(sus (Ree)=100 9 FE BE CE Ip=-0.006 A F {=1.0 KHz) hte! {=1.0 M 'S/b =0.5 $s non-rep. Rac 4Pulsed: Pulse duration=400 us, duty factor=1.8%. 0830 C-13OL Def} 3875041 on172049 g a 3875081 GE SOLID STATE ~ O1E (7285 5 T+ 33-3! varungion rower Transistors Te emp BDX34, BDX34A, BDX34B, BDX34C, BDX34D - VOEO =45 Voeo (MAX) 0-60V (MAX,) - 80 V VeEO (MAX,) #-100V VEG (MAX. Is #120 6 8 0 60 COLLECTOR-TO-EMITTER VOLTAGE (Vce)-V a Koo 9268-29304! Fig. 2 - Maximum operating areas for BDX34-saries types. NOTE: CONSTANT VOLTAGE APPLE: CISSIFATION~ LIMITED PORTION ANO THE LIMITED AREA DC FORWARD CURRENT TRANSFER RATIO (hgel 5 FE a & i 3 5 y, z 3 Ter2SC Of PERCENTAGE OF RATED CURRENT AT SPEQFIED VOLTAGE CASE TEMPERATURE [Tel*c Od =~! 10 -100 220$-20596R1 COLLECTOR CURRENT ([Zc)~ A O2C$-20905R2 Fig. 8 - Currant derating curve for ail types. Fig. 4 - Typical de beta characteristics for all types. H 291 C831 C-14i 3875081 GE SOLID STATE | Darlington Power Transistors BDX34, BDX34A, BDX34B, BDX34C, BDX34D 292 a, DEM 3875081 oO17en0 & T OteE 17290 DT sas! ? z 3 k 5 E 10 3 2 3 3 & a 5 3 Z 2 3 al FACQUENCY{t}MHe 25-2086? Fig. 5 Typical small-signal gain for all types. EMPERATUAE {Tet HaHa 8 Hl EE rath Rstrnt & FEI jess eee toe ELISE Co eet Ted ae t 8 e z a 2 z 3 5 = S r. o w Z =2 4 6 78 =19 COLLECTOA-TO- EMITTER VOLTAGE (vc pIV Fi f i 3 E COLLECTOR -TO- EMITTER SATURATICN VOLTAGE [VcE(ret)] S2CS-20876 Fig. 9 Typical saturation characteristics for all iypes. 92e$-20075 ig. 7 Typical oulput characteristics for ail types. COLLEGTOR-TO-ENITTEA VOLTAGE E = wi = 3 o w a < a QASE-TO-EMITTER VOLTAGE iVgel s28-2087IN Fig. 6 Typical input characteristics for all types. COLLECTOR: TO-EMITTER VOLTAGE BASE-TO-EMITTER VOLTAGE (Vagl 92CS-200724 Fig. 8 - Typical transfer characteristics for all types. INPUT 2-toa Of EQUIVALENT) GHRONETICS PULSE GENERATOR MODEL No PG-31, OR = EQUIVALENT 82 OEVICE UNDER TEST | PULSE DURATION a Rg" 200 Ac 20 ps POSITIVE VOLTAGE 20 ws NEGATIVE VOLTAGE REP, AATE #200 Ke . Tg, AND Tgp ARE MEASURED WITH TEKTRONIX CURRENT PROBE P6OI9 AND TYPE 134 AMPLIFIER, OR EQUIVALENT 92eS 22742 Fig, 10 Circuit used to measure saturated switching times. 0832 D=-O1OL deff aa7soax cores a 3875081 GE SOLID STATE OIE 17291 == Tas-s/ i COLLECTOR SUPPLY VOLTAGE Vech=-z0V Ipitl a2 *1e/500,Tc#25"C z 4 wo COLLECTOR CURRENT (Lp 1A 82C$- 20868ar Fig. 11 Typical saturated switching-time characteristics for all types. Darlington Power Transistors BDX34, BDX34A, BDX34B, BDX34C, BDX34D BASE CURRENT COLLECTOR CURRENT QUIPUT WAVE FORM FES Sg Fig. 12 Phase relationship between input current and output current showing reference points for specifications of switching, 0-02 293