4
NPN Multi-Chip General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
VCEO Collector-Emi t t er Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
1998 Fairchild Semiconductor Corporation
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
FFB3904 FMB3904 MMPQ3904
PDTotal Device Dissipation
Derate above 25°C300
2.4 700
5.6 1,000
8.0 mW
mW/°C
RθJA Thermal Res i stance, Junction to Ambient
Effective 4 Die
Each Die
415 180 125
240
°C/W
°C/W
°C/W
FFB3904 FMB3904
SuperSOT-6
Mark: .1A
Dot denotes pin #1
MMPQ3904
C1
B2 E2
E1 B1 C2
pin #1
C1
E1 C2
B1 E2 B2
pin #1
SC70-6
Mark: .1A
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SOIC-16
Mark: MMPQ3904
C1C1C2C2C3C3C4C4
E1 B1E2B2E3 B3E4B4
pin #1
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
V(BR)CEO Collector-Emit t e r B reakdown Vol tage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30 V, VEB = 0 50 nA
ICEX Collector Cutoff Current VCE = 30 V, V EB = 0 50 nA
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS (MMPQ3904 only)
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz 250 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0,
f = 140 kHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0,
f = 140 kHz 8.0 pF
hFE DC Current Gain IC = 0. 1 mA, VCE = 1.0 V
MMPQ3904
IC = 1.0 mA , VCE = 1.0 V
MMPQ3904
IC = 10 mA, V CE = 1.0 V
MMPQ3904
IC = 50 mA, V CE = 1.0 V
IC = 100 mA, V CE = 1.0 V
40
30
70
50
100
75
60
30
300
VCE(sat) Coll ector-Em i t ter Saturation V ol tage IC = 10 mA , IB = 1.0 mA
IC = 50 mA, I B = 5.0 mA 0.2
0.3 V
V
VBE(sat) Base-Em itter Saturation Voltage IC = 10 mA, I B = 1.0 mA
IC = 50 mA, I B = 5.0 mA 0.65 0.85
0.95 V
V
FFB3904 / FMB3904 / MMPQ3904
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
4
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BA SE-EMITTER VOLTAGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
Colle ctor-Emitter S aturation
Volt ag e vs Collect or Cu rrent
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β = 10
125 °C
- 40 °C
Collect or- Cut of f Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
f = 1.0 MHz
Typi cal Pu lsed C ur r ent Gain
vs Col lector Cur ren t
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPI CA L PULSED CU RR ENT GA IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB3904 / FMB3904 / MMPQ3904
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIG URE (dB)
V = 5.0V
CE
I = 100 µA, R = 500 Ω
CS
I = 1.0 m A
R = 200Ω
C
S
I = 50 µA
R = 1.0 kΩ
C
S
I = 0.5 mA
R = 200Ω
C
S
kΩ
Nois e Fi g u re vs Sou rce Resist an c e
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 µA
C
I = 1.0 mA
C
S
I = 50 µA
C
I = 5.0 mA
C
θ - DEG R E ES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Ang le
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h - CURRENT GAIN (dB)
θ
V = 40 V
CE
I = 10 mA
C
hfe
fe
Tur n-On Time vs Collector Cur ren t
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2 Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
Rise Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2 Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
Power Dissipatio n vs
Amb ien t Temperatur e
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TE MPE RATURE ( C)
P - POWER DISSIPATION (W)
°
D
SOIC-16
SOT-6
SC70-6
4
Typical Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COLL E CTOR CURREN T (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2 Ic
10
S
T = 125°C
T = 25°C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2 Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
Cu rr ent Gain
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h - CURRE NT GA IN
V = 1 0 V
CE
C
fe
f = 1 .0 kHz
T = 25 C
A o
Input I m peda nce
0.1 1 10
0.1
1
10
100
I - CO LL ECT O R CU RRENT (mA)
h - INPU T I MPED ANC E (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A o
Ω
Vo lt age Feedb ac k R atio
0.1 1 10
1
2
3
4
5
7
10
I - COLLECTOR CU RREN T (mA)
h - VOLTAGE FEEDBA CK R ATIO (x10 )
V = 1 0 V
CE
C
re
f = 1.0 k Hz
T = 25 C
A o
_4
O utput Adm ittanc e
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - OUTPU T AD MITTANCE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kHz
T = 25 C
A o
µ
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB3904 / FMB3904 / MMPQ3904
Test Circuits
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
t1
C1 <<
<<
< 4.0 pF
Duty Cycle ==
==
= 2%
Duty Cycle ==
==
= 2%
<<
<<
< 1.0 ns
- 0.5 V
300 ns 10.6 V
10 < <
< <
< t1 <<
<<
< 500 µµ
µµ
µs 10.9 V
- 9.1 V
<<
<<
< 1.0 ns
0
0
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
C1 <<
<<
< 4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
NPN Multi-Chip General Purpose Amplifier
(continued)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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