}- FAIRCHILD SEMICONDUCTOR i one ay DE ayeae74 Ooeraes 3 2N6769/2N6770 N-Channel Power MOSFETs, 12 A, 450 V/500 V T-39-13 a | FAIRCHILD A Schlumberger Company Power And Discrete Division ve scatvenyeeatee ng sae Description TO-204AA These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed S applications, such as off-line switching power supplies, UPS, AC and DC motor controis, relay and solenoid drivers. Vas Rated at +20 V Silicon Gate for Fast Switching Speeds Boo2er Ipss, Vps(en), SOA and Vestn) Specified at Elevated oN6769 Temperature 2N6770 @ Rugged Maximum Ratings Symbol! Characteristic Rating 2N6770 Rating 2N6769 Unit Voss Drain to Source Voltage 500 450 Voar Drain to Gate Voltage Res = 1.0 MQ 500 450 Vas Gate to Source Voltage +20 20 Ty, Tstg Operating Junction and -55 to +150 -55 to +150 C Storage Temperatures Th Maximum Lead Temperature 300 300 C : for Soldering Purposes, i 1/16 From Case for 10 s \ Maximum On-State Characteristics Rosjon) | Static Drain-to-Source 0.4 0.5 2 On Resistance i t 2 | Ip Drain Current A { Continuous at Te = 25C 12 VW i Continuous at To = 100C 4.75 7.0 ! tp Pulsed 252 207 : Maximum Thermal Characteristics i Rac Thermal Resistance, 0.83 0.83 C/W Junction to Case i Pp Total Power Dissipation . Ww : at Te = 25C 150 150 1 at Tg = 100C 60 60 ! Linear Derating Factor 1.2 1.2 W/C Notes All values are JEDEC registered except as noted. For information concerning connection diagram and package ouiline, refer to Section 7. 2-38+ ment |: . 8y pe S469b74 O02742b 5 Tt FAIRCHILD SEMICONDUCTOR | ; - 2N6769/2N6770 a - T-39-13 Electrical Characteristics (Tc = 25C unless otherwise noted) I Symbol Characteristic | Min | Max | Unit | Test Conditions Off Characteristics Viarypss | Drain Source Breakdown Voltage! Vv Ves =0 V, Ip=4 mA 2N6770 5002 2N6769 4502 8 Ipss Zero Gate Voltage Drain Current 1 mA Vps = Rated Voss, Vag = 0 V 4 Vps = Rated Vogs, Vas =0 V, To = 125C lass Gate-Body Leakage Current +100 nA Vas = +20 V, Vpgs=0 V On Characteristics : Vestry | Gate Threshold Voltage 2.0 4.0 V Ip=1 MA, Vos = Ves i Rosjon) | Static Drain-Source On-Resistance! Q Veg = 10 V : 2N6770 0.4 lp = 7.75 A 2N6769 0.5 ID=7.0A . 2N6770 0.88 Ip= 7.75 A, To = 125C 2N6769 1.10 Ip =7.0 A, Te = 125C Vpsion) | Drain-Source On-Voitage! Vv Veg =10 V 2N6770 6.0 ID=1i2A 2N6769 6.0 ID=T1A Os Forward Transconductance 8.0 24 S @) Vos = 15 V, Ip=7.75 A Dynamic Characteristics Ciss Input Capacitance 1000 3000 pF Vos = 25 V, Vag =0 V Cass Output Capacitance 200 600 pF f=1.0 MHz Crsg Reverse Transfer Capacitance 50 200 pF ; Switching Characteristics (Tc = 25C, Figures 9, 10) ton) Turn-On Delay Time 35 ns Vpp = 210 V, Ip=7.75 A t, Rise Time 50 ns noo . \ Raen = 4.7 tutor Turn-Off Delay Time 150 ns ty Fall Time 70 ns Qg Total Gate Charge 120? nc Vag=10 V, Ip=16 A Vpp = 400 V 2-39- se FAIRCHILD SEMICONDUCTOR ay DEP a4b9b74 Oo27827 ay : | 2N6769/2N6770 T-39-13 i \ ' i | Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) t Symbol Characteristic | Min Typ | Max | Unit Test Conditions Source-Drain Diode Characteristics Is Continuous Source Current A 2N6770 122 2N6769 11? ign Pulsed Source Current A 2N6770 25? 2N6769 202 f Vsp Diode Forward Voltage Vv Ves=0 V : 2N6770 0.80 1.6 Is=12 A 2N6769 0.75 1.5 Is=11A ty Reverse Recovery Time 13007 ns Ves =0 V, Ty = 150C le =Igy, dip/dt = 100 A/ps Qrr Reverse Recovery Charge 7.4? uc Veg =0 V, Ty = 150C fe =Igu. dip/dt = 100 A/ps Notes i i 1. Pulse test: Pulse width <300 ys, Duty cycle < 1% 4 2. Non-JEDEC registered value. Typical Performance Curves Figure 2 Static Drain to Source Resistance Figure 1 Output Characteristics vs Drain Current i = 10V v = 10V v 2 Ty = 25C 8 80 ys PULSE TEST 5 t 10 3 oa a ry = 8 38 { a 2 i Ze ob ; z Pr i S ee i Loa 1 } ~ i 2 + a i { 0 : 0 1 2 3 4 5 6 1 "9 4 8 12 16 20 i VpsORAIN TO SOURCE VOLTAGEV Ip DRAIN CURRENTA z PCIOOF PGIONSOF 2-40 metanert FAIRC H ILD SEMICONDUCTOR ay DEB 346574 goe7a2a 4 Tr 2N6769/2N6770 T-39-13 Typical Performance Curves (Cont.) Figure 3 Transfer Characteristics {bDRAIN CURRENT--A Q 1 2 3 4 5 6 7 VasGATE TO SOURCE VOLTAGEV Potcseor Figure 5 Capacitance vs Drain to Source Voltage 106 = z 3 CCAPACITANCEpF w 1 5 10 50 100 VosDRAIN TO SOURCE VOLTAGEV PC1na7OF Figure 7 Forward Biased Safe Operating Area 102 5 5 AREA MAY BE BY Ip--DRAIN CURRENTA StIc = Ty< 150C SINGLE PULSE 2 | = CURRENT LIMITED 1 1 2 108 2 5 12 2 5 103 VosDRAIN TO SOURCE VOLTAGEV PCI ESOF Figure 4 Temperature Variation of Gate to Source Threshold Voltage es 2+ s 2 # >o-.lUC Wh thCcChUmhDLhUhUlUlhUmh NORMALIZED GATE THRESHOLD VOLTAGE a 80 a 50 100 150 Tp -JUNCTION TEMPERATUREC PCCoeaIF Figure 6 Gate to Source Voltage vs Total Gate Charge Voo v =16 TW = 3B Vas GATE TO SOURCE YOLTAGE2 Q 20 40 60 8 100 Qo TOTAL GATE CHARGEnc Povose0r Figure 8 Transient Thermal Resistance vs Time 10+ 3 2thy-cTRANSIENT THERMAL RESISTANCEC/wW 5 10-2? 10-1 10 10" 102 103 164 tTIMEms PGICIOOr 2-41 a cnt eei FAIRCHILD SEMICONDUCTOR ; &Y Def 3469b74 Uoeraed o a 2N6769/2N6770 T-39-13 Typical Electrical Characteristics Figure 9 Switching Test Circuit Figure 10 Switching Waveforms : Vin Voo FL GENEEATOR Ve OUT INVERTED ! INPUT, Vin 2-42