IDB30E120 Fast Switching Emitter Controlled Diode Product Summary Feature VRRM * 1200 V Emitter Controlled technology * Fast recovery * Soft switching * Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 C PG-TO263-3-2 * Low forward voltage * Easy paralleling 2 1 * RoHS compliant 3 Type Package IDB30E120 PG-TO263-3-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D30E120 NC C A Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current IF A TC=25C 50 TC=90C 30 Surge non repetitive forward current I FSM 102 I FRM 76.5 TC=25C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25C 138 TC=90C 66 Operating and storage temperature Soldering temperature Tj , Tstg TS -55...+150 260 C C reflow soldering, MSL1 Rev.2.3 Page 1 2013-07-02 IDB30E120 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR A V R=1200V, T j=25C - - 100 V R=1200V, T j=150C - - 2500 Forward voltage drop VF V IF=30A, T j=25C - 1.65 2.15 IF=30A, T j=150C - 1.7 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.3 Page 2 2013-07-02 IDB30E120 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=800V, IF=30A, diF/dt=850A/s, Tj =25C - 243 - V R=800V, IF=30A, diF/dt=850A/s, Tj =125C - 355 - V R=800V, IF=30A, diF/dt=850A/s, Tj =150C - 380 - Peak reverse current A I rrm V R=800V, IF = 30 A, di F/dt=850A/s, T j=25C - 23.7 - V R=800V, IF =30A, diF/dt=850A/s, Tj=125C - 28.3 - V R=800V, IF =30A, diF/dt=850A/s, Tj=150C - 29.5 - Reverse recovery charge nC Q rr V R=800V, IF=30A, diF/dt=850A/s, Tj =25C - 2630 - V R=800V, IF =30A, diF/dt=850A/s, Tj=125C - 4700 - V R=800V, IF =30A, diF/dt=850A/s, Tj=150C - 5200 - V R=800V, IF=30A, diF/dt=850A/s, Tj =25C - 6 - V R=800V, IF=30A, diF/dt=850A/s, Tj =125C - 7.4 - V R=800V, IF=30A, diF/dt=850A/s, Tj =150C - 7.5 - Reverse recovery softness factor Rev.2.3 S Page 3 2013-07-02 IDB30E120 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj 150C parameter: Tj 150C 55 140 W A 120 45 100 40 90 35 IF P tot 110 80 30 70 25 60 50 20 40 15 30 10 20 5 10 0 25 50 75 100 0 25 150 C 50 75 100 150 C TC TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 90 2.4 A 60A V IF 60 -55C 25C 100C 150C VF 70 2 50 1.8 30A 40 30 1.6 15A 20 1.4 10 0 0 0.5 1 1.5 2 1.2 -60 3 V VF Rev.2.3 Page 4 -20 20 60 100 160 C Tj 2013-07-02 IDB30E120 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 800V, T j = 125C parameter: VR = 800V, Tj = 125 C 1100 6500 ns nC 60A 900 trr 800 Q rr 5500 60A 30A 15A 5000 30A 700 4500 600 4000 500 3000 300 200 200 15A 3500 400 300 400 500 600 700 800 2500 200 A/s 1000 di F/dt 300 400 500 600 700 800 A/s 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 800V, T j = 125C parameter: VR = 800V, Tj = 125C 18 35 A 14 60A 30A 15A S Irr 25 60A 30A 15A 12 20 10 15 8 10 5 200 Rev.2.3 6 300 400 500 600 700 800 4 200 A/s 1000 di F/dt Page 5 300 400 500 600 700 800 A/s 1000 diF/dt 2013-07-02 IDB30E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP30E120 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.3 Page 6 2013-07-02 IDB30E120 Rev.2.3 Page 7 2013-07-02 IDB30E120 Published by Infineon Technologies AG , 81726 Munchen Published by (c) 2009 Infineon Technologies AG Infineon AG All RightsTechnologies Reserved. 81726 Munich, Germany please! 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Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.3 Page 8 2013-07-02