© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 0.2 A
IDM TC= 25°C, Pulse Width Limited by TJM 0.6 A
IATC= 25°C 0.2 A
EAS TC= 25°C40mJ
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C33W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-220 3.00 g
TO-252 0.35 g
DS100201(10/09)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1200 V
VGS(th) VDS = VGS, ID = 100μA 2.0 4.0 V
IGSS VGS = ±20V, VDS = 0V ±50 nA
IDSS VDS = VDSS, VGS = 0V 1 μA
TJ = 125°C 25 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 60 75 Ω
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP02N120P
IXTY02N120P
VDSS = 1200V
ID25 = 0.2A
RDS(on) ≤≤
≤≤
≤ 75ΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zAvalanche Rated
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
Advance Technical Information
G = Gate D = Drain
S = Source Tab = Drain
TO-252 (IXTY)
G
S
D (Tab)
TO-220 (IXTP)
D (Tab)
GDS
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTP02N120P
IXTY02N120P
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
TO-252 (IXTY) Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 0.2 A
ISM Repetitive, Pulse Width Limited by TJM 0.8 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 1.6 μs
IRM 3.5 A
QRM 2.8 μC
IF = 0.2A, -di/dt = 50A/μs,
VR = 100V, VGS = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 30V, ID = 0.5 • ID25, Note 1 0.12 0.20 S
Ciss 104 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 8.6 pF
Crss 1.9 pF
td(on) 6 ns
tr 10 ns
td(off) 21 ns
tf 39 ns
Qg(on) 4.70 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 0.37 nC
Qgd 3.20 nC
RthJC 3.8 °C/W
RthCS TO-220 0.50 °C/W
Resistive Switching Times
VGS = 10V, VDS = 60V, ID = 0.5 • ID25,
RG = 50Ω (External)
© 2009 IXYS CORPORATION, All Rights Reserved
IXTP02N120P
IXTY02N120P
Fi g. 1. Outp u t Ch ar acteristics @ TJ = 25ºC
0
20
40
60
80
100
120
140
160
180
200
02468101214
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
7V
6V
5
V
4
V
3
V
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350
V
DS
- Volts
I
D
- Mi lliAmper es
V
GS
= 10V
8V
7V
5
V
4
V
6
V
Fi g. 3. Ou tput Ch ar act er i sti cs @ TJ = 125ºC
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
7V
5
V
4V
6V
Fig. 4. RDS(on) Normalized to ID = 100mA Valu e v s.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Deg ree s Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 200mA
I
D
= 100 mA
Fig. 5. RDS(on) No r mal i z ed to I D = 100mA Val u e vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 100 200 300 400 500 600 700 800 900 1000
I
D
- MilliAmp eres
R
DS(on)
- Normali zed
V
GS
= 10V
T
J
= 125 ºC
T
J
= 25ºC
Fi g. 6 . Maxi mu m D r ain C u r r ent vs.
Case Temper ature
0
20
40
60
80
100
120
140
160
180
200
220
-50 -25 0 25 50 75 100 125 150
T
C
- Deg ree s Centigrad e
I
D
- Mi lliAmper es
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTP02N120P
IXTY02N120P
IXYS REF: T_02N120P(F2)10-01-09
Fig. 7. Input Admittance
0
50
100
150
200
250
300
350
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- V olts
I
D
- MilliAmperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. T ransconductance
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350
I
D
- Mi lliAmp e res
g
f s
- MilliSiemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
100
200
300
400
500
600
700
800
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- V olts
I
S
- MilliAmperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Q
G
- Nan o Coul omb s
V
GS
- Volts
V
DS
= 600V
I
D
= 100mA
I
G
= 1mA
Fig. 11. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximum Tr an si ent Thermal Imp edan ce
0.1
1.0
10.0
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
