Rugged Power MOSFETs IRFF9230, IRFF9231, IRFF9232, IRFF9233 Avalanche-Energy-Rated P-Channel Power MOSFETs -3.5 A and -4.0 A, -150 V and -200 V ros(On) = 0.8 Q and 1.20 Features: = Single pulse avalanche energy rated = SOA is power-dissipation limited a Nanosecond switching speeds = Linear transfer characteristics = High input impedance The IRFF9230,. IRFF9231, IRFF9232 and IRFF9233 are advanced power MOSFETs designed, tested, and guaran- teed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p- channel enhancement-mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRFF-types are supplied in the JEDEC TO-205AF (Low- Profile TO-39) metal package. ABSOLUTE-MAXIMUM RATINGS File Number 2225 TERMINAL DIAGRAM DB 92CS-43262 P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION GATE SOURCE DRAIN (CASE) JEDEC TO-205AF CHARACTERISTIC IRFF9230 | IRFF9231 | IRFF9232 | IRFF9233 | UNITS Drain-Source Voltage @ Vos -200 -150 -200 ~150 Vv Drain-Gate Voltage (Ras = 20 kQ) Voar -200 -150 -200 -150 Vv. Continuous Drain Current lo @ Te = 25C -4.0 -4.0 -3.5 -3.6 A Pulsed Drain Current @ lbw -16 -16 -14 -14 A Gate-Source Voltage Vas +20 v Maximum Power Dissipation Po @ Te = 25C 25 (See Fig. 14) Ww Linear Derating Factor 0.2 (See Fig. 14) w/c Single-Pulse Avalanche Energy Rating Eas 500 mj Operating Junction and Storage Temperature Ty, Ta -55 to +150 C Range Lead Temperature 300 (0.063 in. (1.6 mm) from case for 10s) C 6-426Rugged Power MOSFETs IRFF9230, IRFF9231, IRFF9232, IRFF9233 ELECTRICAL CHARACTERISTICS, At Tc = 25C (Unless Otherwise Specified) CHARACTERISTIC | TvPE MIN. | TYP. |MAX. | UNITS TEST CONDITIONS Drain-Source Breakdown Voltage BVpss HHRFF9230 200 - - v Vas = OV IRFF9232 IRFF9231 150 _ _ v Ip = ~250 pA IRFF9233 Gate Threshold Voltage Vas{th) ALL -2.0 _ -4.0 v Vos = Vas, Ip = ~-250 vA Gate-Source Leakage Forward lass ALL _ _ -100 nA Vas = -20V Gate-Source Leakage Reverse lass ALL - - 100 nA Ves = 20V Zero-Gate Voltage Drain Current loas ALL - |-250 HA Vos = Max. Rating, Vas = 0 V i _ |-1000 LA Vos = Max. Rating x 0.8, Vas = 0 V, Te = 125C On-State Drain Current @ Ip(on) IRFF9230 40 A IRF FQ231 | Vos > lo(on) x ros(on) max., Vas = -10 V IRFF9232 -3.5 _ _ A IRFF9233 Static Drain-Source On-State fos(on) |IRFF9230 . _ 05 0.8 QQ Resistance @ IRFF9231 Vos = -10 V, lo=-2.0A NRE F9232 _ 0.8 1.2 9 WREF9293 Forward Transconductance (2) Ota ALL 2.2 3.5 _ S(O) | Vos > to(on) x ros(on) max., Ip = 2.0A Input Capacitance Cc ALL - 550 _ F eee = P Vas = 0 V, Vos = -25 V, f = 1.0 MHz Output Capacitance Coss ALL - 170 - pF . See Fig. 10 Reverse Transfer Capacitance Cras ALL _ 50 od pF Turn-On Delay Time ta(on) ALL 30 50 ns Von = 0.5 BVoss, In = 2.0 A, Zo = 502 Rise Time tr ALL - 50 100 ns See Fig. 17 Turn-Off Delay Time ta(off) ALL _ 50 100 ns (MOSFET switching times are essentially Fail Time tt ALL _ 40 80 as independent of operating temperature.) Total Gate Charge Qs ALL 31 45 c Vas = -15 V, In = -8.0 A, Vos = 0.8 Max. Rating. _ n (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is essentially Gate-Source Charge Coe ALL ~ 18 26 nc independent of operating temperature.) Gate-Drain ({"Miller") Charge Qa ALL _- 13 19 ac Internal Drain Inductance Lo ALL _ 5.0 - nH Measured from the drain Modified MOSFET jead, 5mm (0.2 in.) symbol showing the from header to center internal device of die. inductances. o lp Internal Source Inductance Us ALL _ 15.0 = nH Measured from the ) source lead, 5mm (0.2 in.) 6O- ts: from header to source bonding pad. s Junction-to-Case Rec ALL _ _ 5.0 C/w Junction-to-Ambient Raa ALL _ _ 175 C/W [ Typical socket mount. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current Is |tRFF9230 40 A Modified MOSFET symbol (Body Diode) IRFF9231 , showing the integral IRFF9232 reverse P-N junction rectifier. - | -3.5 A 3 JIRFFS233 Pulse Source Current low IRFF9230 _ - ~16 A ; (Body Diode) @ IRFF9231 6o- IRFF9232 - - -14 A $ (RFF9233 Diode Forward Voltage Vv. IRFF9230 ve@ "= | - |-5s |v |te=256, b= -4.0 A, Vos = OV IRFF9231 IRFF9232 _ 1-15 Vv Te = 25C, Is = -3.5 A, Vas = OV IRFF9233 | Reverse Recovery Time te ALL _ 400 ns T, = 150C, Ip = -4.0 A, dir/dt = 100 A/ps Reverse Recovered Charge Qrr ALL _ 26 uC Ta = 150C, ir = -4.0 A, die/dt = 100 A/us Forward Turn-on Time fon ALL intrinsic turn-on time is negligible. Turn-on speed is substantially controlied by Ls + Lo. YT, = 25C to 150C. @ Pulse Test: Pulse width = 300 ps. Duty Cycle = 2% Voo = 50 V, Starting Ts = 25C, L = 46.9 mH, Ra = 25 0, Peak I. = 4.0 A (See Figs. 15 & 16). @ Repetitive Rating: Pulse width limited by max. junction temperature See Transient Thermal Impedance Curve (Fig. 5). 6-427Rugged Power MOSFETs IRFF9230, IRFF9231, IRFF9232, IRFF9233 80 us PULSE TEST Vps> Jaton) * a w & = < e z iy 3 3 z @ 5 s Ip, ORAIN CURRENT (AMPERES) =10 =20 -40 =50 0 =2 =4 6 -8 10 Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vg, GATE-TO-SOURCE VOLTAGE (VOLTS) 92C:S-43308 92CS-43309 Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. TION 1S LIMITED IRFF9230, 9231 BY Rpsjon) BO ps PULSE IRFF9230, 9231 IRFF9232, a Te = 25C Ty = 150C MAX. Rac = 5.0 K/W SINGLE PULSE Ip, DRAIN CURRENT (AMPERES) i Ip, DRAIN CURRENT (AMPERES) 2 6 =38 10 2 4 6 2 4 68 2 468 TAG -1.0 -10 -100 ~1000 Vps: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92CS-43310 82G$-44118 Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. t2 1+. DUTY FACTOR, D = ty/tg 2. PER UNIT BASE = Rgyc PULSE = 5.0 DEG. C/W. THERMAL IMPEDANCE) 3.Tym-Te =Ppm: . 10-5 10-4 19-3 19-2 10-1 1.0 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) oc w a we o z < 6 wl a = e Sz nw 5a az si cr 9 zu 2 25 Su ot ne Ww 92CM-43292 Fig. 5 - Maximum effective transient thermal impedance, junction- to-case vs. pulse duration. 6-428Rugged Power MOSFETs IRFF9230, IRFF9231, IRFF9232, IRFF9233 80 wS PULSE TEST Yes > locon} * ROS(on} max, Ty = -55C Ty = 150C 4 aad Ty = 25C Ty = 125C x Ty = 25C I ae ~ z iw 5 3 z < = 6 a a w > i = & a =9 [42 =i5 04 -06 -08 -1.0 -1.2 -14 -16 -1.8 Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) $2CS-43270 Ip, DRAIN CURRENT (AMPERES) 9208-43912 Fig. 6 - Typical transconductance vs. drain current. Fig. 7 - Typical source-drain diode forward voltage. a {NORMALIZED) = VOLTAGE (NORMALIZED) w o z = a a ry z a 9 & 5 % e z < = a BVpss, DRAIN-TO-SOURCE BREAKDOWN Rosjon): 120 160 Oo Ty, JUNCTION TEMPERATURE (C) Tj, JUNCTION TEMPERATURE (C) 9208-49294 92CS-43913 Fig. 8 - Breakdown voltage vs. ternperature. Fig. 9 - Normalized on-resistance vs. temperature. 2000 Vgs =0 Ip =-8A f=1 MHz @ FOR TEST CIRCUIT 2 SEE FIGURE 18 1800 Cies = Ggs + Cgg. Cas SHORTED = 7s | = Cres = Cg coc 4 2 t* 4 m1 = cau + 8 Cat PS | 1200 Coss = Cds + oo 4 Oo. _ g O88 ds Cyst Cga g -10 [ + Cas t Cgg _ 3 MS __ g 5 a 800 { 9-15 1 Ciss 3 Vos = 160 V, (RFF9230,9232 o * Vps = -100 V _| 5 Vps = -40V 400 -20 o NX NL cons i c o T 18s > } -25 oO =10 =20 =30 =40 50 0 8 16 24 32 40 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC} 9208-43314 9208-43915 Fig. 10 - Typical capacitance vs. drain-to-source voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-429Rugged Power MOSFETs IRFF9230, IRFF9231, IRFF9232, IRFF9233 20 Rosion) MEASURED WITH CURRENT PULSE OF 2.0 uS DURATION. INITIAL Ty = 25 C. (HEATING _ 1p LEFFECT OF 2.0 uS PULSE IS MINIMAL) T & 7 y 3a z 92 / < 68 12 5 & wl Zz 8 Vas = ~10V. & 3 A 3 8% 08 i z su 4 z a | Vos =-20V 9 z Gs . ze) 0.4 * =5 =10 15 20 25 25 50 75 100 125 150 Ip, DRAIN CURRENT (AMPERES) Te, CASE TEMPERATURE (C) 92058-43316 9268-44119 Fig. 12 - Typical on-resistance vs. drain current. Fig. 13 - Maximum drain current vs. case temperature. t p { ov Vag =-10V a as E =< z VARY tp TO OBTAIN z REQUIRED PEAK I, e 9208-43278 & a . . . beet a Fig. 15 - Unclamped inductive test circuit. w z 1 51 peccecerensees pS x. a NY i/ N. i N, i / moN| Yoo Tc, CASE TEMPERATURE (C) 92C$-43300 Fig. 14 - Power vs. temperature derating curve. 8Vpss 9208-43279 Fig. 16 - Unclamped inductive waveforms. Ig to CURRENT CURRENT SAMPLING SAMPLING -Voo RESISTOR = RESISTOR ADJUST RL. +Vos TO OBTAIN dL SPECIFIED ID J 1.5mA . FE PULSE vi GENERATOR O fb r fr ou. CURRENT REGULATOR ! >TO SCOPE 1 [ I 0.012 + [ u M 12 soKa tof IGH FREQUENCY BATTERY | 0.2 pF $ -V . Ousoudten +____. a SUPPLY) 92CS-43:322 92CS-43323 Fig. 17 - Switching time test circuit. Fig. 18 - Gate charge test circuit. 6-430