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PRELIMINARY DATA
May 2000
PD55008 - PD55008S
RF POWER TRANSISTORS
The
LdmoST
Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
•EXCELLENT THERMAL STABILITY
•COMMON SOURCE CONFIGURATION
•POUT = 8 W with 17 dB gain @ 500 MHz /
12.5V
•NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55008 is acommon source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12V in common source mode at frequencies of
up to 1GHz. PD55008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55008’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
XPD55008
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD55008
PD55008S XPD55008S
ABSOLUTE MAXIMUM RATINGS(TCASE =25O
C)
Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
IDDrain Current 4 A
PDISS Power Dissipation (@ Tc = 70 0C) 52.8 W
TjMax. Operating Junction Temperature 165 OC
TSTG Storage Temperature -65 to 165 OC
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance 1.8 OC/W
PD55008 - PD55008S
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PD55008S
Frequency
MHz Zin
ΩZdl
Ω
520 1.586 - j2.087 3.082 + j2.043
500 1.409 - j3.448 2.129 + j3.219
480 1.075 - j2.727 2.046 +j1.960
PIN CONNECTION
SOURCE
DRAINGATE
SC15200
ELECTRICAL SPECIFICATION(TCASE =250
C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
IDSS VGS =0V V
DS =28V 1µA
I
GSS VGS =20V V
DS =0V 1µA
V
GS(Q) VDS =10V I
D= 150 mA 2.0 5.0 V
VDS(ON) VGS =10V I
D= 1.5 A 1.0 V
gFS VDS =10V I
D= 1.5 A 1.6 mho
CISS VGS =0V V
DS = 12.5 V f = 1 MHz 58 pF
COSS VGS =0V V
DS = 12.5 V f = 1 MHz 39 pF
CRSS VGS =0V V
DS = 12.5 V f = 1 MHz 2.6 pF
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
POUT f = 500 MHz VDD = 12.5 V IDQ =150mA 8W
G
PS f = 500 MHz VDD = 12.5 V POUT =8W I
DQ = 150 mA 17 dB
ηDf = 500 MHz VDD = 12.5 V POUT =8W I
DQ = 150 mA 55 %
LOAD
Mismatch f = 500 MHz VDD = 15.5 V POUT =8W I
DQ = 150 mA
ALL PHASE ANGLES 20:1 VSWR
PD55008
Frequency
MHz Zin
ΩZdl
Ω
520 1.649 - j1.965 1.716 - j1.552
500 1.589 - j1.185 1.561 - j2.639
480 1.141 - j2.054 1.649 - j2.916
D
S
Typical Input
Impedance
Zin
G
ZDL
Typical Drain
Load Impedance
SC13140
IMPEDANCE DATA
3/10
PD55008 - PD55008S
Capacitance vs. Drain Voltage
0 5 10 15 20 25
VDD, DRAIN VOLTAGE (V)
1
10
100
1000
C, CAPACITANCES (pF)
Ciss
Coss
Crss
f=1MHz
Drain Current vs. Gate Voltage
123456789
VGS, GATE-SOURCE VOLTAGE (V )
0
1
2
3
4
5
6
7
8
Id, DRAIN CURRENT (A)
VDS =10V
Gate-Source vs. Case Temperature
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (°C)
0.92
0.94
0.96
0.98
1
1.02
1.04
1.06
VGS, GATE-SOURCE VOLTAGE(NORMALIZED)
ID=.25A
ID=.5A
ID=1A
ID=2A
ID=1.5A
V
DS =10V
TYPICAL PERFORMANCE
PD55008 - PD55008S
4/10
Output Power vs. Input Power
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Pin, INPUT POWER (W)
0
2
4
6
8
10
12
14
Pout, OUTPUT POWER (W)
VDD =12.5 V
IDQ=150mA
480MHz 500MHz
520 MHz
Power Gain vs. Output Power
024681012
Pout, OUTPUT POWER (W)
6
8
10
12
14
16
18
20
22
Pg, POWER GAIN (dB)
VDD =12.5 V
IDQ=150mA
480 MHz
500 MHz
520MHz
Drain Efficiency vs. Output Power
024681012
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
70
80
Nd, DRAIN EFFICIENCY (%)
VDD=12.5V
IDQ = 150 mA
480MHz
500MHz
520 MHz
Input Return Loss vs. Output Power
024681012
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
Rtl, INPUT RETURN LOSS (dB)
VDD =12.5V
IDQ=150mA
480MHz
500 MHz
520 MHz
Output Power vs. Bias Current
0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
0
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
VDD=12.5V
Pin=21.7dBm
480 MHz
500 MHz
520 MHz
Drain Efficiency vs. Bias Current
0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
10
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY(%)
VDD =12.5V
Pin=21.7 dBm
480 MHz
500MHz
520 MHz
TYPICAL PERFORMANCE PD55008
5/10
PD55008 - PD55008S
024681012
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
70
80
Nd, DRAIN EFFICIENCY (%)
VDD=12.5V
IDQ= 150 mA
480MHz
500MHz
520 MHz
0 0.1 0.2 0.3 0.4 0.5
Pin, INPUT POWER (W)
0
2
4
6
8
10
12
14
Pout, OUTPUT POWER (W)
VDD=12.5V
IDQ=150mA
480MHz
500MHz
520MHz
Output Power vs. Supply Voltage
9 101112131415
VDD, SUPPLY VOLTAGE (V)
3
4
5
6
7
8
9
10
11
12
13
Pout, OUTPUT POWER (W)
Idq=150mA
Pin=21.7dBm
480 MHz
500 MHz
520MHz
Drain Efficency vs. Supply Voltage
9 101112131415
VDD, SUPPLY VOLTAGE (V)
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY(%)
Idq=150 mA
Pin=21.7 dBm
480MHz
500MHz
520MHz
Output Power vs. Gate-Source Voltage
01234
VGS, GATE-SOURCE VOLTAGE (V)
0
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
VDD=12.5 V
Pin=21.7 dBm
480 MHz
500MHz
520MHz
TYPICAL PERFORMANCE
Power Gain vs. Output Power
02468101214
Pout, OUTPUT POWER (W)
6
8
10
12
14
16
18
20
22
Pg, POWER GAIN (dB)
VDD=12.5V
IDQ=150mA
480MHz
500MHz
520MHz
Drain Efficiency vs. Output Power
Output Power vs. Input Power PD55008S
PD55008 - PD55008S
6/10
Input Return Loss vs. Output Power
024681012
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
Rtl, INPUT RETURN LOSS (dB)
VDD=12.5V
IDQ=150mA
480MHz
500MHz
520MHz
Output Power vs. Bias Current
0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
0
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
480MHz
500MHz
520MHz
VDD=12.5V
Pin=21dBm
Drain Efficiency vs. Bias Current
0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
10
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
480MHz
500MHz
520MHz
VDD=12.5V
Pin=21dBm
Output Power vs. Supply Voltage
9 101112131415
VDD, SUPPLY VOLTAGE (V)
3
4
5
6
7
8
9
10
11
Pout, OUTPUT POWER (W)
480MHz
500MHz 520MHz
Idq=150mA
Pin=21dBm
520MHz
Drain Efficency vs. Supply Voltage
9101112131415
VDD, SUPPLY VOLTAGE (V)
20
30
40
50
60
Nd, DRAIN EFFICIENCY (%)
480 MHz
500MHz
520MHz
Idq=150 mA
Pin=21dBm
Output Power vs. Gate-Source Voltage
01234
VGS, GATE-SOURCE VOLTAGE (V)
0
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
480MHz 500MHz
520MHz
VDD=12.5V
Pin=21dBm
TYPICAL PERFORMANCE
7/10
PD55008 - PD55008S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
B1,B2 SHORT FERRITT BEAD, FAIRRITE
PRODUCTS (2743021446) R4 33KΩ, 1/8 W RESISTOR
C1,C12 240pF, 100 mil CHIP CAPACITOR Z1 0.451” X 0.080” MICROSTRIP
C2,C3,C10,C11 0 to 20 pF TRIMMER CAPACITOR Z2 1.005” X 0.080” MICROSTRIP
C4 82pF, 100 mil CHIP CAP Z3 0.020” X 0.080” MICROSTRIP
C5,C16 120pF, 100 mil CHIP CAP Z4 0.155” X 0.080” MICROSTRIP
C6,C13 10µF,50V ELECTROLYTIC
CAPACITOR Z5,Z6 0.260” X 0.223” MICROSTRIP
C7,C14 1.200pF mil CHIP CAP Z7 0.065” X 0.080” MICROSTRIP
C8,C15 0.1 F,100 mil CHIP CAP Z8 0.266” X 0.080” MICROSTRIP
C9 30pF, 100 mil CHIP CAP Z9 1.113” X 0.080” MICROSTRIP
L1 55.5 nH, TURN, COILCRAFT Z10 0.433” X 0.080” MICROSTRIP
N1,N2 TYPE N FLANGE MOUNT BOARD ROGER, ULTRA LAM 2000
R1 15 Ω, 0805 CHIP RESISTOR THK 0.030” εr= 2.55
R2 51 Ω, 1/2 W RESISTOR 2oz ED Cu 2 SIDES
R3 10 Ω, 0805 CHIP RESISTOR
PD55008 - PD55008S
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TEST CIRCUIT
4 inches
6.4 inches
TEST CIRCUITTEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
9/10
PD55008 - PD55008S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
PD55008 - PD55008S
10/10
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of use of such information nor for any infringement of patents or otherrights ofthird partieswhich may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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