Standard Power MOSFETs BUZ 60 File Number 2260 N-Channel Enhancement-Mode Power Field-Effect Transistors 5.5 A, 400 V N-CHANNEL ENHANCEMENT MODE Tpsiom = 1.09 0 Features: a SOA is power-cissipation limited m Nanosecond switching speeds = Linear transfer characteristics m High input impedance = Majority carrier device sO $ 92CS -3374) The BUZ 60 is an n-channel enhancement-mode silicon- TERMINAL DIAGRAM gate power field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar TERMINAL DESIGNATION switching transistors requiring high speed and low gate- drive power. This type can be operated directly from inte- grated circuits. The BUZ 60 is supplied in the JEDEC TO-220AB plastic ippRAN o DRAIN package. ) TOP VIEW Coare 92Cs-39828 JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): DRAIN-SOURCE VOLTAGE 2.2... oe cee cece ccc cc eect ee cueeceseeyetecetnnnnecs - 400 Vv DRAIN-GATE VOLTAGE, Ros = 20kQ ............. Vor -_->-@ . 400 Vv GATE-SOURCE VOLTAGE ........0.0 000.0. ccc cee eM _- 20 v DRAIN CURRENT, RMS Continuous Tc = 35 C _~. 55 A Pulsed Tc = 25C... . 0... _ 22 A POWER DISSIPATION @ Te = 25C... oe eee 75 Ww OPERATING AND STORAGE TEMPERATURE ......... Ts _ -55 to +150 C DIN HUMIDITY CATEGORY DIN 40040 2.0.0.0... occ eee cee cece ences eeecnerceeennes HE IEC CLIMATIC CATEGORY DIN IEC 68-1 55/150/56 3-26Standard Power MOSFETs ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified EMIT: CHARACTERISTIC TEST CONDITIONS t s UNITS MIN. TYP. MAX. Drain-Source Breakdown Voltage BVoss Ves = OV < 400 {op = 0.25 MA Vv Gate-Threshold Voltage Vesan Vos = Ves = 2.1 3 4 Ilb=1mA Zero-Gate Voltage Drain Current loss T= 25C _ 20 250 T,= 125C 100 1000 pA Vos = 400 V, Vas =O V Gate-Source Leakage Current less Ves = 20V _ 10 100 nA Vos = OV Drain-Source On Resistance Toston Vos = 10V _ 09 1 Q IDp=2.5A Forward Transconductance Os Vos = 25V 17 25 _ Ss Ip =2.5A Input Capacitance Ciss Ves = OV _ 15 2 Output Capacitance Coss Vos = 25V _ 120 180 pF Reverse Transfer Capacitance Cres f= 1 MHz ~ 35 60 Turn-On Time ton taton Veo = 30 V _ 30 45 (ton = tarom + t) tr b=27A - 40 60 Vos = 10 V ns Turn-Off Time ton tarot os = _ 440 140 = Res = 50 Q (tort = tao + tr} u ~ 50 65 Thermal Resistance, Junction-to-Case Rauc = 1.67 caw Thermal Resistance, Junction-to-Ambient Rosa = 75 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC TEST CONDITIONS LIMITS UNITS MIN. TYP. MAX. Continuous Reverse Drain Current lpr To = 25C _ _ 5.6 A Pulsed Reverse Drain Current lorm _ _ 22 Diode Forward Voltage Vsp le = 2 x Iba _ : 1. Ves = 0V, T; = 25C 118 v Reverse Recovery Time tre T; = 25C, lr = loa _ 1000 _ ns Reverse Recovered Charge Qar |dle/dt = 100 A/us, Va = 100V) 0 5 _ uC Fig. 40? < 10 5 i t 2 Os T 107 40 5 10! 5 10? Vv 10? DRAIN-TO-SOURCE VOLTAGE (Vos) V 7 - Maximum safe operating areas for all types. 3-27Standard Power MOSFETs BUZ 60 80 5 70 * 60 4 > 50 z S g> 3 Ee al & 40 3F Q Bo Q Eo > 30 == 2 x e w < = o 2 20 1 10 0 0 0 50 100 150 -50 0 50 100 150 CASE TEMPERATURE (Tc) C JUNCTION TEMPERATURE (Ty) C Fig. 2 - Pawer vs. temperature derating curve for all types. Fig. 3 - Normalized gate threshold voitage as a function of junction temperature for all types. 2.5 80 ys PULSE TEST = 25 V,T,= 25C < { 2.0 > w 3 2 2 5 E 3 2 ea 145 f i z gs BS AG Z 1.0 x z i i bb 6.5 2 o 0 0 -50 0 50 100 150 0 5 10 JUNCTION TEMPERATURE (T,) -- C GATE-TO-SOURCE VOLTAGE (Vas) V Fig. 4 - Normalized drain-to-source on resistance to junction Fig. 5 - Typical transfer characteristics for alf types. temperature for ail types. 12 P = v 80 ws PULSE TEST 80 us PULSE TEST a an 1SV Vos = 25 V, T, = 25C 0 10,0V 8,0 DRAIN CURRENT (lo) A TRANSCONDUCTANCE (ges) S 4SV 4,0V % wo 20 30 40 5 40 DRAIN-TO-SOURCE VOLTAGE (Vos) V DRAIN CURRENT (lb) A Fig. 6 - Typical output characteristics. Fig. 7 - Typical transconductance vs. drain current. 3-28Vas25V SSVT 6VT 65V 7V DRAIN-TO-SOURCE ON RESISTANCE (rpsion)) 2 0 2 4 6 8 10 12 DRAIN CURRENT (lp) A Fig. 8 - Typicat on-resistance vs. drain currem. DRAIN CURRENT (lo) A 0 50 100 150 CASE TEMPERATURE (Tc) C Fig. 10 - Maximum drain current vs. case temperature. 10 o CMO -NU I SNM 2 10" Py _ an p= + ; r 10? 10 5 10% 5 103 5 107 5 107 5 10 10! RECTANGULAR PULSE DURATION (ti) S THERMAL RESPONSE (Zunsc) S99 als Fig. 12 - Maximum effective transient thermal impedance, junction- to-case vs. pulse duration. GATE-TO-SOURCE VOLTAGE (Ves) V 1s Standard Power MOSFETs BUZ 60 10! Ves = 0, f = 1 MHz 3 S uw CAPACITANCE (C) nF 3 wn 10? 0 10 20 30 40 DRAIN-TO-SOURCE VOLTAGE (Vos) V Fig. 9 - Typical capacitance vs. drain-to-source voltage. 102 80 42s PULSE TEST 5 -_ o = Ty=150C TYP. a Ty=25C TYP. 100 REVERSE RAIN CURRENT (ipa) A 10-1 0 05 1.0 15 2.0 25 3.0 SOURCE-TO-DRAIN VOLTAGE gq) -Vv Fig. 11 - Typical source-drain diode forward voltage. to pus = 8.3 A 10 20 30 40 50 TOTAL GATE CHARGE (Qc) nC Fig. 13 - Typical gate charge vs. gate-to-source voltage. 3-29