NJG1117HA8 - New Japan Radio Co., Ltd.

- 1 -

Ver.2007-06-22

NJG1117HA8

GPS LOW NOISE AMPLIFIER GaAs MMIC

Q GENERAL DESCRIPTION Q PACKAGE OUTLINE

This IC is a Low noise amplifier GaAs MMIC designed for

GPS. This amplifier provides low noise figure, high gain and

high IP3 operated by single low positive power supply.

This amplifier can be tuned to wide frequency point

(1.5GHz~2.4GHz).

An ultra-small and ultra-thin package of USB6-A8 is adopted.

Q FEATURES

O Low voltage operation +2.7V typ.

O Low current consumption 3.0mA typ.

O High small signal gain 19.5dB typ. @ f=1.575GHz

O Low noise figure 0.7dB typ. @ f=1.575GHz

O Input power at 1dB gain compression point -16.5 dBm typ. @f=1.575GHz

O High input IP3 -2.0dBm typ. @f=1.575GHz+1.5751GHz

O Ultra-small & ultra-thin package USB6-A8 (Package size: 1.0x1.2x0.38mm)

Q PIN CONFIGURATION

NJG1117HA8

Note: Specifications and description listed in this datasheet are subject to change without notice.

Pin connection

1. RFOUT

2. GND

3. GND

4. RFIN

5. GND

6. GND

GND

RFIN

RFOUT

GND

4

5

2

6

1

3

GND

Bias

Circuit

1Pin INDEX

HA8 Type

(Top View)

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NJG1117HA8

Q ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50 ohm

PARAMETER SYMBOL CONDITIONS RATINGS UNITS

Drain Voltage VDD 5.0 V

Input power Pin VDD=2.7V +15 dBm

Power dissipation PD On PCB board, Tjmax=150°C 150 mW

Operating temperature Topr -40~+85 °C

Storage temperature Tstg -55~+150 °C

Q ELECTRICAL CHARACTERISTICS

GENERAL CONDITIONS: VDD=2.7V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50 ohm, with application circuit.

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Operating Frequency freq 1.57 1.575 1.58 GHz

Operating voltage VDD 2.5 2.7 3.6 V

Operating current1 IDD RF OFF - 3.0 4.0 mA

Small signal gain Gain 17.5 19.5 22.0 dB

Noise figure NF Exclude PCB & connector

losses (IN: 0.05dB) - 0.7 1.0 dB

Input power at 1dB gain

compression point P-1dB(IN) -19.0 -16.5 - dBm

Input 3rd order

intercept point IIP3 f1=fRF, f2=fRF+100kHz,

Pin=-34dBm -8.0 -2.0 - dBm

RF IN VSWR VSWRi - 2.0 2.5

RF OUT VSWR VSWRo - 1.5 2.0

- 3 -

NJG1117HA8

Q TERMINAL INFORMATION

No. SYMBOL DESCRIPTION

1 RFOUT

RF Output and voltage supply pin. An external output matching circuit and a

bypass capacitor are required. L3 is a RF choke inductor. These elements are

used as output matching circuit.

2 GND Ground terminal. (0V)

3 GND Ground terminal. (0V)

4 RFIN

RF input pin. A DC blocking capacitor is not required. An external input matching

circuit is required.

5 GND Ground terminal. (0V)

6 GND Ground terminal. (0V)

CAUTION

1) Ground terminal (2, 3, 5, 6) should be connected with the ground plane as low inductance as possible.

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NJG1117HA8

Q ELECTRICAL CHARACTERISTICS

(Conditions: Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)

-25

-20

-15

-10

-5

0

5

10

-40-30-20-10 0 10

Pout (dBm)

Pin (dBm)

P-1dB(IN)=-16.6dBm

Pout

Pout vs. Pin

(VDD=2.7V, fRF=1575MHz)

8

10

12

14

16

18

20

22

24

0

1

2

3

4

5

6

7

8

-40 -30 -20 -10 0 10

Gain (dB)

IDD (mA)

Pin (dBm)

Gain

IDD

Gain, IDD vs. Pin

(VDD=2.7V, fRF=1575MHz)

P-1dB(IN)=-16.2dBm

0

0.5

1

1.5

2

2.5

3

16

17

18

19

20

21

22

1.5 1.55 1.6 1.65

Noise Figure (dB)

Gain (dB)

frequency (GHz)

NF

NF, Gai n vs. f requency

(VDD=2.7V)

Gain

(NF: Exclu d e PCB, Conne cto r Loss es)

0

5

10

15

20

05101520

k factor

frequency (GHz)

k factor vs. fr equency

(VDD=2.7V)

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

Pout, IM3 (dBm)

Pin (dBm)

IIP3=-1.9dBm

Pout

IM3

Pout, IM3 vs. Pin

(VDD=2.7V, fRF=1575+1575.1MHz)

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NJG1117HA8

Q ELECTRICAL CHARACTERISTICS

(Conditions: Ta=+25°C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.)

0

1

2

3

4

5

6

2.4 2.6 2.8 3 3.2 3.4 3.6 3.8

IDD (mA)

VDD (V)

IDD

IDD vs. VDD

(RF OFF)

8

10

12

14

16

18

20

22

24

-6

-4

-2

0

2

4

6

8

10

2.4 2.6 2.8 3 3.2 3.4 3.6 3.8

OIP3 (dBm)

IIP3 (dBm)

VDD (V)

OIP3

IIP3

OIP3, IIP3 vs. VDD

(fRF=1575+1575.1MHz, Pin=-34dBm)

-24

-22

-20

-18

-16

-14

-12

-10

2.4 2.6 2.8 3 3.2 3.4 3.6 3.8

P-1dB(I N) (dBm)

VDD (V)

P-1dB(IN)

P-1dB(IN) vs. VDD

(fRF=1575MHz)

10

12

14

16

18

20

22

24

0

0.5

1

1.5

2

2.5

3

3.5

2.4 2.6 2.8 3 3.2 3.4 3.6 3.8

Gain (dB)

NF (dB)

VDD (V)

Gain

NF

Gain, NF vs. VDD

(fRF=1575MHz)

0

1

2

3

4

5

2.4 2.6 2.8 3 3.2 3.4 3.6 3.8

VSWRi

VSWRo

VSWRi, VSWRo

VDD (V)

VSWR vs. VDD

(fRF=1575MHz)

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NJG1117HA8

Q ELECTRICAL CHARACTERISTICS

(Conditions: Ta=+25°C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.)

-24

-22

-20

-18

-16

-14

-12

-10

-50 0 50 100

P-1dB(I N) (dBm)

Tem pera t u re (oC)

P-1dB(IN)

P-1dB(I N) vs. T emperature

(fRF=1575MHz)

0

1

2

3

4

5

-50 0 50 100

VSWRi

VSWRo

VSWRi, VSWRo

Tem pera t u re (oC)

VSWR vs. Temperature

(f=1575MHz)

0

1

2

3

4

5

-50 0 50 100

IDD (mA)

Tem pera t u re (oC)

IDD

IDD vs. Temperature

(RF OFF)

10

12

14

16

18

20

22

24

0

0.5

1

1.5

2

2.5

3

3.5

-50 0 50 100

Gain (dB)

NF (dB)

Tem pera t u re (oC)

Gain

NF

Gain, NF vs. Temperature

(fRF=1575MHz)

0

5

10

15

20

25

-10

-5

0

5

10

15

-50 0 50 100

OIP3 (dBm)

IIP3 (dBm)

Tem pera t u re (oC)

OIP3

IIP3

OIP3, IIP3 vs. Temperature

(fRF=1575+1575.1MHz, P in=-34dBm)

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NJG1117HA8

Q ELECTRICAL CHARACTERISTICS

(Conditions: Ta=+25°C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.)

- 8 -

NJG1117HA8

Q APPLICAT ION CIRCUIT

Q TEST PCB LAYOUT

Parts ID Comment

L1 ~ L3 MURATA

(LQP03T Series)

L4 TDK

(MLK0603 Series)

C1 ~ C2 MURATA

(GRM03 Series)

GND

RFIN

RFOUT

GND

4

5

2

6

1

3

GND

Bias

Circuit

L1

33nH

VDD=2.7V

RF IN

RF OUT

L3

6.8nH

C2

1000pF

C1

1.5pF

HA8 Type

(Top View)

1Pin INDEX

L4

22nH

L2

8.2nH

RF OUT

RF IN

VDD

L1

(Top View)

L2 L3 L4 C2

C1

PCB (FR-4):

t=0.2mm

MICROSTRIP LINE WIDTH

=0.34mm (Z0=50 ohm)

PCB SIZE=14.0mm x 14.0mm

Parts list

PRECAUTION:

In order to prevent stability degradation in high frequency range, please prepare ground plane

between terminal 4(RFIN) and terminal 1(RFOUT).

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NJG1117HA8

Q MEASUREMENT BLOCK DIAGRAM

IIP3 Measurement Block Diagram

DUT

VDD=2.9V

RFOutput

RF Input

Signal

Generator Spectrum

Analyzer

Center=865.05Hz

Span=400kHz

RBW=3kHz

VBW=100Hz

Signal

Generator

freq2=865.1MHz Power

Comb.

Variable

Attenuator

freq1=865.0MHz

Isolator

VDD=2.7V

freq1

freq2

6dB

Noise Figure Measurement Block Diagram

DUT

NF

Meter

VDD=2.9V

N.S. Output

RF Output

RF Input

Input

Noise Source

VDD=2.7V

A

nalyze

r

S parameter Measurement Block Diagram

DUT

Network

Analyzer

VDD=2.9V

Port1

RF Outp ut

RF Input

Port2

VDD=2.7V

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NJG1117HA8

Q PACKAGE OUTLINE (USB6-A8)

Cautions on using this product

This product contains Gallium-Arsenide (GaAs) which is a harmful material.

• Do NOT eat or put into mouth.

• Do NOT dispose in fire or break up this product.

• Do NOT chemically make gas or powder with this product.

• To waste this

p

roduct,

p

lease obe

y

the relatin

g

law of

y

ou

r

countr

y

.

This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle

with care to avoid these dama

g

es.

[CAUTION]

The specifications on this databook are only

given for information , without any guarantee

as regards either mistakes or omissions. The

application circuits in this databook are

described only to show representative usages

of the product and not intended for the

guarantee or permission of any right including

the industrial rights.

Photo resist coating

TERMINAL TREAT :Au

Substrate :FR5

Molding material :Epoxy resin

UNIT :mm

WEIGHT :1.1mg

0.2 (MIN0.15)

1.2±0.05

0.8

0.4

0.2±0.04

6

R0.05

5

1

4

2

3

0.4

1.0

±

0.05

0.2

±

0.07

0.2±0.04

0.6

0.1

±

0.05

C0.1

0.38±0.06

0.038-0.009

+0.012

S

0.03

S