2N5428A
MEDIUM POWER
NPN SILICON
TRANSISTOR
Designed for switching and
wide - band amplifier
applications
VCEO Collector - emitter voltage
VCB Collector - base voltage
VEB Emitter - base voltage
ICCollector current – continuous
IBBase current
PDTotal device dissipation at Tcase= 25°C
Derate above 25°C
TjOperating and
Tstj storage junction temperature range
R
q
JC Thermal resistance, junction to case.
80 V
80 V
6 V
7 A
1 A
40 W
228 mW / °C
4.37 °C / W
MECHANICAL DATA
Dimensions in mm
TO66 Package.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
-65 to 200°C
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
Prelim. 7/93
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
BVCEO (sus) Collector - Emitter
sustaining voltage
ICBO Collector cutoff current
ICBO Collector cutoff current
IEBO Emitter cutoff current
80 - V
- 100
m
A
-10
m
A
-1.0mA
10
m
A
100
m
A
Min Max Unit
OFF CHARACTERISTICS
Parameter Test Conditions
ICEX Collector cutoff current
IC= 50mA , IB= 0
VCE = 75V , IB= 0
VCE = 75V , VEB(off) = 1.5V
VCE = 75V , VEB(off) = 1.5V , TC= 150°C
VCB = Rated VCB ' IE= 0
VBE = 6V, IC= 0
hFE DC Current gain (1)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
60 -
30 120
30
0.7
1.2
1.2
2.0
ON CHARACTERISTICS
—
V
V
IC= 500mA , VCE = 2V
IC= 2A , VCE = 2V
IC= 5A , VCE = 2V
IC= 2A , IB= 0.2A
IC= 7A , IB= 0.7A
IC= 2A , IB= 0.2A
IC= 7A , IB= 0.7A
Min Max UnitParameter Test Conditions
VCE(sat)
VBE(sat)
Current gain
bandwidth product
Cob Output capacitance
Cib Input capacitance
30 - MHz
- 250 pF
- 1000 pF
DYNAMIC CHARACTERISTICS
(IC= 500 mA, VCE = 10V, f = 10 MHz)
(VCB = 10V, IE= 0, f = 100 kHz)
(VBE = 2V, IC= 0, f = 100 kHz)
fT
Parameter Test Conditions Min Max Unit
tdDelay time (VCC = 40V, VEB(off) = 3V
trRise time IC= 2A, IB1 = 200mA)
tsStorage time (VCC = 40V, IC= 2A
tfFall time IB1 = IB2 = 200mA)
- 100 ns
- 100 ns
-2.0
m
s
- 200 ns
SWITCHING CHARACTERISTICS
Parameter Test Conditions Min Max Unit
(1) Pulse Test: Pulse width = 300
m
s, Duty Cycle = 2.0 %
Prelim. 7/93
2N5428A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
