Rev.2.00 Aug 10, 2005 page 1 of 5
2SD1418
Silicon NPN Epitaxial
REJ03G0787-0200
(Previous ADE-208-1149)
Rev.2.00
Aug.10.2005
Application
• Low frequency power amplifier
• Complementary pair with 2SB1025
Outline
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK R )
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 120 V
Collector to emitter voltage VCEO 80 V
Emitter to base voltage VEBO 5 V
Collector current IC 1 A
Collector peak current iC(peak)*1 2 A
Collector power dissipation PC*2 1 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
2SD1418
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V(BR)CBO 120 — — V IC = 10 µA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO 80 — — V IC = 1 mA, RBE = ∞
Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 µA, IC = 0
Collector cutoff current ICBO — — 10 µA VCB = 100 V, IE = 0
DC current transfer ratio hFE1*1 60 — 320 VEB = 5 V, IC = 150 mA*2
h
FE2 30 — — VCE = 5 V, IC = 500 mA*2
Collector to emitter saturation voltage VCE(sat) — — 1 V IC = 500 mA, IB = 50 mA*2
Base to emitter voltage VBE — — 1.5 V VCE = 5 V, IC = 150 mA*2
Gain bandwidth product fT — 140 — MHz VCE = 5 V, IC = 150 mA*2
Collector output capacitance Cob — 12 — pF VCB = 10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SD1418 is grouped by hFE1 as follows.
2. Pulse test
Mark DA DB DC
hFE1 60 to 120 100 to 200 160 to 320
2SD1418
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
15010050
Ambient Temperature Ta (°C)
0
1.2
0.8
0.4
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(W)
(on the alumina ceramic board)
841062
Collector to Emitter Voltage V
CE
(V)
0
1.0
0.8
0.6
0.4
0.2
Typical Output Characteristics
Collector Current I
C
(A)
I
B
= 0
1
2
5
10
15
20
25
30
35
0.5 mA
00.40.80.2 0.6 1.0
Base to Emitter Voltage V
BE
(V)
500
200
100
50
20
5
2
1
10
Typical Transfer Characteristics
Collector Current I
C
(mA)
V
CE
= 5 V
Ta = 75°C
25
–25
10 100 1,00030 30031
Collector Current I
C
(mA)
300
250
200
150
100
50
0
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs. Collector Current
V
CE
= 5 V
Ta = 75°C
25
–25
10 100 1,00030 30031
Collector Current I
C
(mA)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.6
0.5
0.4
0.3
0.2
0.1
0
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Saturation Voltage vs. Collector Current
I
C
= 10 I
B
Pulse
V
CE(sat)
V
BE(sat)
10 30 100 300 1,000
Collector Current I
C
(mA)
240
200
160
120
80
40
0
Gain Bandwidth Product vs. Collector Current
Gain Bandwidth Product f
T
(MHz)
V
CE
= 5 V
Pulse
2SD1418
Rev.2.00 Aug 10, 2005 page 4 of 5
25010520 1001
Collector to Base Voltage VCB (V)
200
10
100
50
20
5
2
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
2SD1418
Rev.2.00 Aug 10, 2005 page 5 of 5
Package Dimensions
4.5 ± 0.1
1.8 Max 1.5 ± 0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.8 Min
φ1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Package Name
PLZZ0004CA-A UPAK / UPAKV
MASS[Typ.]
0.050g
SC-62
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SD1418DATR-E
2SD1418DBTR-E
2SD1418DCTR-E
1000 φ 178 mm Reel, 12 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
