UNISONIC TECHNOLOGIES CO., LTD
2SD882 NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2012 Unisonic Technologies Co., Ltd QW-R209-003.E
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Normal Lead Free Halogen Free 1 2 3
2SD882-x-T60-K 2SD882L-x-T60-K 2SD882G-x-T60-K TO-126 E C B Bulk
2SD882-x-T6C-K 2SD882L-x-T6C-K 2SD882G-x-T6C-K TO-126C E C B Bulk
2SD882-x-TM3-T 2SD882L-x-TM3-T 2SD882G-x-TM3-T TO-251 B C E Tube
2SD882-x-TN3-R 2SD882L-x-TN3-R 2SD882G-x-TN3-R TO-252 B C E Tape Reel
2SD882-x-TN3-T 2SD882L-x-TN3-T 2SD882G-x-TN3-T TO-252 B C E Tube
2SD882-x-T9N-B 2SD882L-x-T9N-B 2SD882G-x-T9N-B TO-92NL E C B Tape Box
2SD882-x-T9N-K 2SD882L-x-T9N-K 2SD882G-x-T9N-K TO-92NL E C B Bulk
2SD882 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current DC IC 3 A
Pulse ICP 7 A
Base Current IB 0.6 A
Collector Dissipation (Ta=25℃)
TO-92NL
PC
0.8 W
TO-251/TO-252/
TO-126/TO-126C 1 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=100μA, IE=0 40 V
Collector-Emitter Breakdown Voltage BVCEO I
C=1mA, IB=0 30 V
Emitter-Base Breakdown Voltage BVEBO I
E=100μA, IC=0 5 V
Collector Cut-off Current ICBO V
CB=30V, IE=0 1000 nA
Emitter Cut-off Current IEBO V
EB=3V, IC=0 1000 nA
DC Current Gain (Note 1) hFE1 V
CE=2V, IC=20mA 30 200
hFE2 V
CE=2V, IC=1A 100 150 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=2A, IB=0.2A 0.3 0.5 V
Base-Emitter Saturation Voltage VBE(SAT) I
C=2A, IB=0.2A 1.0 2.0 V
Current Gain Bandwidth Product fT V
CE=5V, IC=0.1A 80 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 45 pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100-200 160-320 200-400
2SD882 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Collector Current, Ic (A)
Derating, IC(%)
S/b limited
Dissipation limited
Current Gain-Bandwidth Product
Current Gain-
Bandwidth Product, FT(MHz)
Collector-Emitter Voltage
Collector Current, IC(A)
Safe Operating Area
IC(max), Pulse
10mS
1mS
0.1mS
Collector Current, Ic (A)
103
102
101
100
10-2 10-1 100101
101
100
10-1
10-2
100101102
IC(max), DC
VCE=5V
IB=8mA
DC Current Gain, hFE
Saturation Voltage (mV)
2SD882 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
Collector-Base Voltage (V)
Output Capacitance (pF)
100
103
IE=0
f=1MHz
102
101
100
10-1 10-2 10-3
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
