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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 1N5820-1N5822 1N5820 - 1N5822 Features * 3.0 ampere operation at TA = 95C with no thermal runaway. * For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter Units 1N5820 1N5821 1N5822 20 30 40 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current 3/8 " lead length @ TA = 95C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature Value Units IFSM Tstg TJ V 3.0 A 80 A -65 to +125 C -65 to +125 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation 3.6 W RJA Thermal Resistance, Junction to Ambient 28 C/W Electrical Characteristics Symbol TA = 25C unless otherwise noted Device Parameter VF Forward Voltage IR Reverse Current @ rated VR CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 2001 Fairchild Semiconductor Corporation @ 3.0 A @ 9.4 A TA = 25C TA = 100C Units 1N5820 1N5821 1N5822 475 850 500 900 0.5 20 525 950 190 mV mV mA mA pF 1N5820-1N5822, Rev. C (continued) 4 20 T J = 25C S Pulse Width = 200 10 3 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" 9.5 mm LEAD LENGTHS 2 1 0 Forward Current, IF [A] Average Rectified Forward Current, IF [A] Typical Characteristics 0 20 40 60 80 100 Lead Temperature [C] 120 1N5821 1 0.3 0.4 0.5 0.6 0.7 Forward Voltage, VF [V] 80 0.9 100 1N5820 70 8.3ms Single Half Sine-Wave JEDEC Method 60 50 40 30 20 10 0.8 Figure 2. Forward Voltage Characteristics Reverse Current, IR [mA] Peak Forward Surge Current, IFSM [A] Figure 1. Forward Current Derating Curve 1N5822 0.1 0.2 140 1N5820 1 2 5 10 20 Number of Cycles at 60Hz 50 100 Total Capacitance, CT [pF] Figure 3. Non-Repetitive Surge Current T J = 125C 1N5822 10 1N5821 T J = 75C 1 T J = 25C 0.1 0.01 5 10 15 20 25 30 R everse Voltage, VR [V] 35 40 Figure 4. Reverse Current vs Reverse Voltage 1000 800 600 400 200 100 80 60 40 20 10 0.1 0.4 1 4 10 Reverse Voltage, VR [V] 40 100 Figure 5. Total Capacitance 2001 Fairchild Semiconductor Corporation 1N5820-1N5822, Rev. C 1N5820-1N5822 Schottky Rectifiers TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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