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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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1N5820-1N5822
1N5820-1N5822, Rev. C2001 Fairchild Semiconductor Corporation
1N5820 - 1N5822
Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
•3.0 ampere operation at TA = 95°C
with no thermal runaway.
•For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Symbol
Parameter
Device
Units
1N5820 1N5821 1N5822
VF Forward Voltage @ 3.0 A
@ 9.4 A 475
850 500
900 525
950 mV
mV
IR Reverse Current @ rated VR TA = 25°C
TA = 100°C 0.5
20 mA
mA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 190 pF
Thermal Characteristics
Symbol
Parameter
Value
Units
1N5820 1N5821 1N5822
VRRM Maximum Repetitive Reverse Voltage 20 30 40 V
IF(AV) Average Rectified Forward Current
3/8 " lead length @ TA = 95°C 3.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 80 A
Tstg Storage Temperature Range -65 to +125 °C
TJ Operating Junction Temperature -65 to +125 °C
DO-201AD
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
PD Power Dissipation 3.6 W
RθJA Thermal Resistance, Junction to Ambient 28 °C/W
1N5820-1N5822
1N5820-1N5822, Rev. C2001 Fairchild Semiconductor Corporation
Schottky Rectifiers
(continued)
Typical Characteristics
5 10152025303540
0.01
0.1
1
10
100
Reverse Voltage, VR [V]
Reverse Current, IR [mA]
T = 125 C
º
J
T = 75 C
º
J
T = 25 C
º
J
1N5820
1N5822
1N5821
0 20 40 60 80 100 120 140
0
1
2
3
4
Lead Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" 9.5 mm LEAD
LENGTHS
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0.1
1
10
20
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Widt h = 200µ
µµ
µS
T = 25 C
º
J 1N5820
1N5822
1N5821
0.1 0.4 1 4 10 40 100
10
20
40
60
80
100
200
400
600
800
1000
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
12 51020 50100
10
20
30
40
50
60
70
80
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
8.3ms Single Half Sine-Wave
JEDEC Method
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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STAR*POWER is used under license
VCX™
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