DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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November 2015
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DMN61D9UW
NEW PROD UCT
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N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max
60V
2Ω @ VGS = 5.0V
2.5Ω @ VGS = 2.5V
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Motor Control
Power Management Functions
Backlighting
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN61D9UW-7
SOT323
3,000/Tape & Reel
DMN61D9UW-13
SOT323
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
B
C
D
E
F
G
H
I
J
K
L
M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT323
Top View
ESD protected up to 2kV
Top View
D
GS
Equivalent Circuit
D
S
G
Gate Protection
Diode
1AC= Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
DMN61D9UW
Document number: DS38027 Rev. 2 - 2
2 of 6
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November 2015
© Diodes Incorporated
DMN61D9UW
NEW PROD UCT
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 5.0V
Steady
State
TA = +25°C
TA = +70°C
ID
340
270
mA
t<5s
TA = +25°C
TA = +70°C
ID
400
300
mA
Maximum Continuous Body Diode Forward Current (Note 6)
IS
0.4
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
IDM
1.2
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
320
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
393
°C/W
t<5s
306
Total Power Dissipation (Note 6)
PD
440
mW
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
289
°C/W
t<5s
235
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
±10
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.5
1.0
V
VDS = 10V, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
1.2
1.6
2.5
2.0
2.5
3.5
Ω
VGS = 5.0V, ID = 0.05A
VGS = 2.5V, ID = 0.05A
VGS = 1.8V, ID = 0.05A
Forward Transconductance
|Yfs|
200
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage
VSD
0.75
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
28.5
pF
VDS = 30V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
3.9
pF
Reverse Transfer Capacitance
Crss
2.5
pF
Gate Resistance
Rg
65
Ω
f = 1MHz , VGS = 0V, VDS = 0V
Total Gate Charge
Qg
0.4
nC
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Qgs
0.1
nC
Gate-Drain Charge
Qgd
0.1
nC
Turn-On Delay Time
tD(ON)
2.1
ns
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 200mA
Turn-On Rise Time
tR
1.8
ns
Turn-Off Delay Time
tD(OFF)
14.4
ns
Turn-Off Fall Time
tF
8.4
ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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0.0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
I , DRAIN CURRENT (A)
D
V , DRAIN -SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
V = 2.5V
GS
V = 3.0V
GS
V = 10V
GS
V = 4.5V
GS
V = 2.0V
GS
V = 1.8V
GS
V = 1.5V
GS
0
0.2
0.4
0.6
0.8
0.5 1 1.5 2 2.5 3
I , DRAIN CURRENT (A)
D
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
V = 5.0V
DS
T = 150 C
A
T = 125 C
AT = 85C
A
T = 25 C
A
T = -55 C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
0 0.2 0.4 0.6 0.8 1
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I , DRAIN SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V = 2.5V
GS
V = 5.0V
GS
1
1.5
2
2.5
3
0 5 10 15 20
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
I = 50mA
D
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 0.2 0.4 0.6 0.8 1
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I , DRAIN SOURCE CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
V = 4.5V
GS
T = -55 C
A
T = 25 C
A
T = 85C
A
T = 125 C
A
T = 150 C
A
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150
R , DRAIN-SOURCE
DS(ON)
ON-RESISTANCE (NORMALIZED)
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Junction
Temperature
V = 2.5V
GS
I = 50mA
D
V = 5.0V
GS
I = 50mA
D
DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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1
10
100
0 5 10 15 20 25 30 35 40
C , JUNCTION CAPACITANCE (pF)
T
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
Ciss
Coss
Crss
f = MH
Z
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 0.1 0.2 0.3 0.4 0.5
V GATE THRESHOLD VOLTAGE (V)
GS
Q , TOTAL GATE CHARGE (nC)
gFigure 10 Gate Charge
V = 10V
DS
I = 250mA
D
0.001
0.01
0.1
1
10
0.1 1 10 100
I , DRAIN CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11 SOA, Safe Operation Area
RDS(on)
Limited
DC
P = 10s
WP = 1s
W
P = 100ms
WP = 10ms
WP = 1ms
W
P = 100µs
W
T = 150°C
J(max)
T = 25°C
C
V = 5V
GS
Single Pulse
DUT on 1 * MRP Board
f=1MHz
DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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DMN61D9UW
NEW PROD UCT
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIMES (sec)
Figure 12 Transient Thermal Resistance
R (t) = r(t) * R
JA JA
R = 391°C/W
JA
Duty Cycle, D = t1/ t2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
D = 0.9
SOT323
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.25
0.40
0.30
c
0.10
0.18
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
e1
1.20
1.40
1.30
F
0.375
0.475
0.425
L
0.25
0.40
0.30
a
8°
All Dimensions in mm
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.470
Y
0.600
Y1
2.500
a
E1E
Fe1
b
L
c
e
A2
A1
D
Y1 G
Y
X
C
DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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