Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
1.5V Drive Pch + Pch MOSFET
TT8J11
Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive(1.5V drive).
Application
Switching
Packaging specifications
Package Taping
Code TCR
Basic ordering unit (pieces) 3000
TT8J11
Absolute maximum ratings (Ta = 25C)
Symbol Limits Unit
Drain-source voltage VDSS 12 V
Gate-source voltage VGSS 0 to 8V
Continuous ID3.5 A
Pulsed IDP 12 A
Continuous Is0.8 A
Pulsed Isp 12 A
1.25 W / TOTAL
1 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Symbol Limits Unit
100 ˚C / W /TOTAL
125 ˚C / W /ELEMENT
* Mounted on a ceramic board.
Type
Source current
(Body Diode)
Drain current
Parameter
Parameter
Channel to Ambient Rth (ch-a)
PD
Power dissipation
TSST8
(1) (2) (3) (4)
(8) (7) (6) (5)
*2
*1
*1
*
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain 1 ESD PROTECTION DIODE
2 BODY DIODE
Abbreviated symbol : J11
Dimensions (Unit : mm)
Inner circuit
2
1
(8) (7)
(1) (2)
2
1
(6) (5)
(3) (4)
1/6 2011.05 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
TT8J11  
Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --10 AV
GS=8V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 12 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS --10 AV
DS=12V, VGS=0V
Gate threshold voltage VGS (th) 0.3 - 1.0 V VDS=6V, ID=1mA
-3143 I
D=3.5A, VGS=4.5V
-4360 I
D=1.7A, VGS=2.5V
-6090 I
D=1.7A, VGS=1.8V
- 80 160 ID=0.7A, VGS=1.5V
Forward transfer admittance l Yfs l4 - - SI
D=3.5A, VDS=6V
Input capacitance Ciss - 2600 - pF VDS=6V
Output capacitance Coss - 200 - pF VGS=0V
Reverse transfer capacitance Crss - 190 - pF f=1MHz
Turn-on delay time td(on) - 15 - ns ID=1.7A, VDD 6V
Rise time tr- 30 - ns VGS=4.5V
Turn-off delay time td(off) - 170 - ns RL=3.5
Fall time tf- 60 - ns RG=10
Total gate charge Qg- 22 - nC ID=3.5A
Gate-source charge Qgs - 3.9 - nC VDD 6V
Gate-drain charge Qgd - 3.1 - nC VGS=4.5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Forward Voltage VSD --1.2 V Is=3.5A, VGS=0V
*Pulsed
Conditions
Conditions
Parameter
Parameter
Static drain-source on-state
resistance RDS (on) m
*
*
*
*
*
*
*
*
*
*
2/6 2011.05 - Rev.A
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Data Sheet
TT8J11
 
Electrical characteristic curves (Ta=25C)
0
0.5
1
1.5
2
2.5
3
3.5
0 0.2 0.4 0.6 0.8 1
Drain Current : -ID [A]
Drain-Source Voltage : -VDS [V]
Fig.1 Typical Output Characteristics ()
VGS=-1.5V
a=25
VGS=-4.0V
VGS=-4.5V
VGS=-1.8V
VGS=-1.2V
VGS=-2.8V
0
0.5
1
1.5
2
2.5
3
3.5
0246810
Drain Current : -ID [A]
Drain-Source Voltage : -VDS [V]
Fig.2 Typical Output Characteristics ()
VGS=-1.5V
VGS=-4.0V
VGS=-4.5V
VGS=-1.8V
VGS=-1.2V
VGS=-2.8V
Ta=25°C
pulsed
1
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Drain Current : -ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
V
GS=-1.5V
V
GS=-1.8V
V
GS=-2.5V
VGS=-4.5V
Ta=25°C
pulsed
1
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Drain Current : -ID [A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
V
GS=-4.5V
pulsed
T
a=125
°
C
T
a=75°C
T
a=25°C
Ta=-25°C
1
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Drain Current : -ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
V
GS=
-
2.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Drain Current : -ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
V
GS=-1.8V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6 2011.05 - Rev.A
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Data Sheet
TT8J11
 
1
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Drain Current : -ID [A]
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current
V
GS=
-
1.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
10
100
0.01 0.1 1 10
Forward Transfer Admittance
Yfs [S]
Drain Current : -ID [A]
Fig.8 Forward Transfer Admittance vs. Drain Current
V
DS=
-
6V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.001
0.01
0.1
1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Drain Currnt : -ID [A]
Gate-Source Voltage : -VGS [V]
Fig.9 Typical Transfer Characteristics
VDS=-6V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
1
10
0.0 0.5 1.0 1.5 2.0
Source Current : -Is [A]
Source-Drain Voltage : -VSD [V]
Fig.10 Source Current vs. Source-Drain Voltage
V
GS
=0V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
50
100
150
200
0 2 4 6 8
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Gate-Source Voltage : -VGS [V]
Fig.11 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
T
a=25
°C
pulsed
ID=-3.5A
ID=-0.7A
1
10
100
1000
0.01 0.1 1 10
Switching Time : t [ns]
Drain Current :- ID [A]
Fig.12 Switching Characteristics
td(on)
tr
td(off)
tf
VDD-6V
VGS=-4.5V
RG=10Ω
Ta=25°C
Pulsed
4/6 2011.05 - Rev.A
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Data Sheet
TT8J11
 
0
1
2
3
4
5
0 5 10 15 20 25
Gate-Source Voltage : -VGS [V]
Total Gate Charge : -Qg [nC]
Fig.13 Dynamic Input Characteristics
T
a=25
°
C
V
DD=-6V
ID
=-3.5A
Pulsed
10
100
1000
10000
100000
0.01 0.1 1 10 100
Capacitance : C [pF]
Drain-Source Voltage : -VDS [V]
Fig.14 Typical Capacitance vs. Drain-Source Voltage
T
a=25
°C
f=1MHz
VGS=0V
Ciss
Coss
Crss
5/6 2011.05 - Rev.A
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Data Sheet
TT8J11  
Measurement circuits
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design E
S
protection circuit.
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
90% 90%
10% 10%
10%
50% 50%
Pulse Width
V
GS
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
V
G
V
GS
Charge
Qg
Qgs Qgd
V
GS
I
G(Const.)
V
D
S
D.U.T.
I
D
R
L
V
DD
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
6/6 2011.05 - Rev.A
R1120A
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Notes