www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
TT8J11
Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --10 AV
GS=8V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 12 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS --10 AV
DS=12V, VGS=0V
Gate threshold voltage VGS (th) 0.3 - 1.0 V VDS=6V, ID=1mA
-3143 I
D=3.5A, VGS=4.5V
-4360 I
D=1.7A, VGS=2.5V
-6090 I
D=1.7A, VGS=1.8V
- 80 160 ID=0.7A, VGS=1.5V
Forward transfer admittance l Yfs l4 - - SI
D=3.5A, VDS=6V
Input capacitance Ciss - 2600 - pF VDS=6V
Output capacitance Coss - 200 - pF VGS=0V
Reverse transfer capacitance Crss - 190 - pF f=1MHz
Turn-on delay time td(on) - 15 - ns ID=1.7A, VDD 6V
Rise time tr- 30 - ns VGS=4.5V
Turn-off delay time td(off) - 170 - ns RL=3.5
Fall time tf- 60 - ns RG=10
Total gate charge Qg- 22 - nC ID=3.5A
Gate-source charge Qgs - 3.9 - nC VDD 6V
Gate-drain charge Qgd - 3.1 - nC VGS=4.5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Forward Voltage VSD --1.2 V Is=3.5A, VGS=0V
*Pulsed
Conditions
Conditions
Parameter
Parameter
Static drain-source on-state
resistance RDS (on) m
*
*
*
*
*
*
*
*
*
*
2/6 2011.05 - Rev.A