MoR22-6 Central MCR22-8 Semiconductor Corp. SENSITIVE GATE SILICON CONTROLLED RECTIFIER 1.5 AMP, 400 THRU 600 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR22-6 and MCR22-8 are PNPN Sensitive Gate Silicon Controlled Rectifiers manufactured in a TO-92 case, and designed for CD ignition, fuel igniters, flash circuits, and motor control applications. MARKING CODE: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T,=25C unless otherwise noted) SYMBOL MCR22-6 MCR22-8 UNITS Peak Repetitive Off-State Voltage Vor, YRRM 400 600 V RMS On-State Current (Tc=80C) IT(RMS) 1.5 A Non Rept. On-State Current ITSM 15 A Fusing Current (t=8.3ms) [2t 0.9 A2s Peak Reverse Gate Voltage (ts1.0us) VGRM 5.0 Vv Forward Peak Gate Current (ts1.0us) lEGM 0.2 A Peak Gate Dissapation (ts1.0us) Pom 0.5 Ww Gate Dissipation (t=8.3ms) PG (AV) 0.1 Ww Operating Junction Temperature Tj -40 to +125 2 Storage Temperature Tstg -40 to +150 C Thermal Resistance 8jc 50 CW Thermal Resistance OA 160 CW ELECTRICAL CHARACTERISTICS: (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, 'RRM Rated VDRM, VRRM, RGK=1KQ, To = 25C 10 LA IDRM, IRRM Rated VbRM, VRRM, R6K=1KQ, Tc= 125C 200 LA VT 17=1.0A 1.7 V IoT VaK=6.0V, Ry = 1002, Tg = 25C 200 UA IGT VaK=6.0V, Ry = 1002, Te = -40C 500 yA Vo6T VaK=7.0V, RL = 1002, To = 25C 0.8 Vv VG6T Vak=7.0V, Ry, = 1002, Tg = -40C 41:2 Vv Vep VaK=12V, Ry = 1009, Te = 110C On V ly VaKk=12V, lak = 200mMA, Tc = 25C 5:0 mA ly Vak=12V, lak = 200mA, Tc = -40C 10 mA dv/dt Te=110C 25 Vius R1 (18-June 2004) 138central wor . MCR22-8 Semiconductor Corp. SENSITIVE GATE SILICON CONTROLLED RECTIFIER 1.5 AMP, 400 THRU 600 VOLTS TO-92 CASE - MECHANICAL OUTLINE a | = B (123 R1 LEAD CODE: 1) CATHODE 2) GATE 3) ANODE MARKING CODE: FULL PART NUMBER TO-92 (REV: R1) R1 (18-June 2004) 139