© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 3 1Publication Order Number:
NLU1GT04/D
NLU1GT04
Single Inverter, TTL Level
LSTTL−Compatible Inputs
The NLU1GT04 MiniGatet is an advanced CMOS high−speed
inverting buffer in ultra−small footprint.
The device input is compatible with TTL−type input thresholds and
the output has a full 5.0 V CMOS level output swing.
The NLU1GT04 input and output structures provide protection
when voltages up to 7 V are applied, regardless of the supply voltage.
Features
•High Speed: tPD = 3.8 ns (Typ) @ VCC = 5.0 V
•Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
•TTL−Compatible Input: VIL = 0.8 V; VIH = 2.0 V
•CMOS−Compatible Output:
VOH > 0.8 VCC; VOL < 0.1 VCC @ Load
•Power Down Protection Provided on inputs
•Balanced Propagation Delays
•Ultra−Small Packages
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
VCC
NC
IN A
OUT Y
GND
1
2
3
5
4
IN A OUT Y
1
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
6
NC
MARKING
DIAGRAMS
N or P = Device Marking
M = Date Code
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See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
UDFN6
MU SUFFIX
CASE 517AA
PIN ASSIGNMENT
1
2
3 GND
NC
IN A
4
5NC
OUT Y
FUNCTION TABLE
L
H
AY
H
L
6V
CC
N
M
PM
UDFN6
MU SUFFIX
CASE 517AQ
1
NLU1GT04
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage −0.5 to +7.0 V
VIN DC Input Voltage −0.5 to +7.0 V
VOUT DC Output Voltage −0.5 to +7.0 V
IIK DC Input Diode Current VIN < GND −20 mA
IOK DC Output Diode Current VOUT < GND ±20 mA
IODC Output Source/Sink Current ±12.5 mA
ICC DC Supply Current Per Supply Pin ±25 mA
IGND DC Ground Current per Ground Pin ±25 mA
TSTG Storage Temperature Range −65 to +150 °C
TLLead Temperature, 1 mm from Case for 10 Seconds 260 °C
TJJunction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
FRFlammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
ILATCHUP Latchup Performance Above VCC and Below GND at 125 °C (Note 5) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
VCC Positive DC Supply Voltage 1.65 5.5 V
VIN Digital Input Voltage 0 5.5 V
VOUT Output Voltage 0 5.5 V
TAOperating Free−Air Temperature −55 +125 °C
Dt/DVInput Transition Rise or Fall Rate VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V 0
0100
20 ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NLU1GT04
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions VCC
(V)
TA = 25 5C TA = +855CTA = −555C
to +1255C
Unit
Min Typ Max Min Max Min Max
VIH Low−Level Input Voltage 1.8 1.2 1.2 1.2 V
3.0 1.4 1.4 1.4
4.5 to
5.5 2.0 2.0 2.0
VIL Low−Level Input Voltage 1.8 0.3 0.3 0.3 V
3.0 0.53 0.53 0.53
4.5 to
5.5 0.8 0.8 0.8
VOH High−Level
Output Voltage VIN = VIH or VIL
IOH = −50 mA3.0
4.5 2.9
4.4 3.0
4.5 2.9
4.4 2.9
4.4 V
VIN = VIH or VIL
IOH = −2 mA
IOH = −4 mA
IOH = −8 mA
1.8
3.0
4.5
1.40
2.58
3.94
1.38
2.48
3.80
1.37
2.34
3.66
VOL Low−Level Output
Voltage VIN = VIH or VIL
IOL = 50 mA3.0
4.5 0
00.1
0.1 0.1
0.1 0.1
0.1 V
VIN = VIH or VIL
IOL = 2 mA
IOL = 4 mA
IOL = 8 mA
1.8
3.0
4.5
0.36
0.36
0.36
0.44
0.44
0.44
0.52
0.52
0.52
IIN Input Leakage Current 0 v VIN v 5.5 V 0 to
5.5 ±0.1 ±1.0 ±1.0 mA
ICC Quiescent Supply
Current 0 v VIN v VCC 5.5 1.0 20 40 mA
ICCT Quiescent Supply
Current VIN = 3.4 V 5.5 1.35 1.50 1.65 mA
IOPD Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol Parameter VCC
(V) Test
Condition
TA = 25 5C TA = +855CTA = −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
tPLH,
tPHL Propagation De-
lay, Input A to
Output Y
3.0 to
3.6 CL = 15 pF 5.0 10.0 11.0 13.0 ns
CL = 50 pF 6.2 13.5 15.0 17.5
4.5 to
5.5 CL = 15 pF 3.8 6.7 7.5 8.5
CL = 50 pF 4.2 7.7 8.5 9.5
CIN Input Capacitance 5 10 10 10.0 pF
CPD Power Dissipation
Capacitance
(Note 6)
5.0 10 pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.
NLU1GT04
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4
VCC
GND
50%
50% VCC
A or B
Y
tPHL
tPLH
Figure 3. Switching Waveforms
Figure 4. Test Circuit
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for propagation delay tests.
CL*
INPUT OUTPUT
ORDERING INFORMATION
Device Package Shipping†
NLU1GT04MUTCG UDFN6
(Pb−Free) 3000 / Tape & Reel
NLU1GT04AMUTCG UDFN6
(Pb−Free) 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NLU1GT04
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5
PACKAGE DIMENSIONS
UDFN6, 1.2x1.0, 0.4P
CASE 517AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÉÉ
ÉÉ
A
B
E
D
BOTTOM VIEW
b
e
6X
0.10 B
0.05
AC
C
L5X
NOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X
0.10 C
10X
A
A1
(A3)
0.08 C
0.10 C
C
SEATING
PLANE
SIDE VIEW
L2
13
46
DIM MIN MAX
MILLIMETERS
A0.45 0.55
A1 0.00 0.05
A3 0.127 REF
b0.15 0.25
D1.20 BSC
E1.00 BSC
e0.40 BSC
L0.30 0.40
L1 0.00 0.15
L1
DETAIL A
Bottom View
(Optional)
ÉÉÉ
ÉÉÉ
ÉÉÉ
A1
A3
DETAIL B
Side View
(Optional)
EDGE OF PACKAGE
MOLD CMPD
EXPOSED Cu
L2 0.40 0.50
MOUNTING FOOTPRINT*
DIMENSIONS: MILLIMETERS
0.22
6X
0.42 6X
1.07
0.40
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NLU1GT04
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6
PACKAGE DIMENSIONS
UDFN6, 1.45x1.0, 0.5P
CASE 517AQ
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
ÉÉÉ
ÉÉÉ
A
B
E
D
BOTTOM VIEW
b
e
6X
0.10 B
0.05
AC
C
L6X
NOTE 3
0.10 C
PIN ONE
REFERENCE
TOP VIEW
0.10 C
6X
A
A1
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
13
46
DIM MIN MAX
MILLIMETERS
A0.45 0.55
A1 0.00 0.05
b0.20 0.30
D1.45 BSC
E1.00 BSC
e0.50 BSC
L0.30 0.40
L1 −−− 0.15
DIMENSIONS: MILLIMETERS
0.30
6X
1.24
0.53 PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.50
1
MOUNTING FOOTPRINT
PACKAGE
OUTLINE
L1
DETAIL A
L
OPTIONAL
CONSTRUCTIONS
L
ÉÉ
ÉÉ
ÉÉ
DETAIL B
MOLD CMPDEXPOSED Cu
OPTIONAL
CONSTRUCTIONS
A2 0.07 REF
6X
A2
DETAIL B
DET AIL A
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NLU1GT04/D
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