© 2007 Microchip Technology Inc. DS21353D-page 1
TC1070/TC1071/TC1187
Features:
• 50 µA Ground Current for Longer Battery Life
• Adjustable Output Voltage
• Very Low Dropout Voltage
• Choice of 50 mA (TC1070), 100 mA (TC1071)
and 150 mA (TC1187) Output
• Power-Saving Shutdown Mode
• Over Current and Over Temperature Protection
• Space-Saving 5-Pin SOT-23 Package
• Pin Compatible with Bipolar Regulators
Applications:
• Battery Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulators for SMPS
• Pagers
Typical Application
General Description:
The TC1070, TC1071 and TC1187 are adjustable
LDOs designed to supersede a variety of older (bipolar)
voltage regulators. Total supply current is typically
50 μA at full load (20 to 60 times lower than in bipolar
regulators).
The devices’ key features include ultra low-noise
operation, very low dropout voltage – typically 85 mV
(TC1070); 180 mV (TC1071); and 270 mV (TC1187) at
full load, and fast response to step changes in load.
Supply current is reduced to 0.5 μA (maximum) when
the shutdown input is low. The devices incorporate both
over-temperature and over-current protection. Output
voltage is programmed with a simple resistor divider
from VOUT to ADJ to GND.
The TC1070, TC1071 and TC1187 are stable with an
output capacitor of only 1 μF and have a maximum
output current of 50 mA, 100 mA and 150 mA,
respectively. For higher output versions, please see the
TC1174 (IOUT = 300 mA) data sheet.
Package Type
TC1070
TC1071
TC1187
VOUT
GND
C1
1 µF
+
VIN VIN VOUT
15
2
4
3
SHDN
Shutdown Control
(from Power Control Logic)
ADJ
R1
R2
[ ]
VOUT = VREF x +1
R1
R2
ADJ
SHDN
5
5-Pin SOT-23
TC1070
TC1071
TC1187
13
4
2
VIN
VOUT
GND
50mA, 100mA and 150mA Adjustable CMOS LDOs with Shutdown
TC1070/TC1071/TC1187
DS21353D-page 2 © 2007 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 5)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
*Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol Parameter Min Typ Max Units Test Conditions
VIN Input Operating Voltage 2.7 —6.0 VNote 6
IOUTMAX Maximum Output Current 50
100
150
—
—
—
—
—
—
mA TC1070
TC1071
TC1187
VOUT Adjustable Output
Voltage Range
VREF —5.5V
VREF Reference Voltage 1.165 1.20 1.235 V
ΔVREF/ΔTV
REF Temperature Coefficient — 40 — ppm/°C Note 1
ΔVOUT/ΔVIN Line Regulation — 0.05 0.35 %(V
R + 1V) ≤ VIN ≤ 6V
ΔVOUT/VOUT Load Regulation TC1070; TC1071
TC1187
—
—
0.5
0.5
2
3
%I
L = 0.1 mA to IOUTMAX
IL = 0.1 mA to IOUTMAX
(Note 2)
VIN-VOUT Dropout Voltage
TC1071; TC1187
TC1187
—
—
—
—
—
2
65
85
180
270
—
—
120
250
400
mV IL = 0.1 mA
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA (Note 3)
IIN Supply Current — 50 80 μASHDN = VIH, IL = 0
IINSD Shutdown Supply Current — 0.05 0.5 μASHDN = 0V
PSRR Power Supply Rejection Ratio — 64 — dB FRE ≤ 1 kHz
IOUTSC Output Short Circuit Current — 300 450 mA VOUT = 0V
ΔVOUT/ΔPDThermal Regulation — 0.04 — V/W Note 4
TSD Thermal Shutdown Die Temperature — 160 — °C
ΔTSD Thermal Shutdown Hysteresis — 10 — °C
eN Output Noise — 260 — nV/√Hz IL = IOUTMAX
SHDN Input
VIH SHDN Input High Threshold 45 ——%V
IN VIN = 2.5V to 6.5V
Note 1:
2: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
3: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
4: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
6: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ΔT
© 2007 Microchip Technology Inc. DS21353D-page 3
TC1070/TC1071/TC1187
VIL SHDN Input Low Threshold — — 15 %VIN VIN = 2.5V to 6.5V
ADJ Input
IADJ Adjust Input Leakage Current — 50 — pA
ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol Parameter Min Typ Max Units Test Conditions
Note 1:
2: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
3: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
4: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
6: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ΔT
TC1070/TC1071/TC1187
DS21353D-page 4 © 2007 Microchip Technology Inc.
2.0 TYPICAL CHARACTERISTICS
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
ILOAD = 10mA
CIN
= 1μF
COUT
= 1μF
TEMPERATURE (°C)
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
I
LOAD
= 10mA
C
IN
= 1μF
C
OUT
= 1μF
TEMPERATURE (°C)
Dropout Voltage vs. Temperature
(V
OUT
= 3.3V)
0
10
20
30
40
50
60
70
80
90
GND CURRENT (
μ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
ILOAD = 10mA
CIN = 1μF
COUT = 1μF
Ground Current vs. VIN (VOUT = 3.3V)
VIN (V)
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.090
0.100
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
ILOAD = 50mA
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.000
0.050
0.100
0.150
0.200
0.250
0.300
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
ILOAD = 150mA
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0
10
20
30
40
50
60
70
80
90
GND CURRENT (
μ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
I
LOAD
= 100mA
C
IN
= 1μF
C
OUT
= 1μF
Ground Current vs. V
IN
(VOUT
= 3.3V)
V
IN
(V)
© 2007 Microchip Technology Inc. DS21353D-page 5
TC1070/TC1071/TC1187
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
0
10
20
30
40
50
60
70
80
GND CURRENT (μA)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
ILOAD = 150mA
CIN = 1μF
COUT = 1μF
VIN (V)
Ground Current vs. VIN (VOUT = 3.3V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
LOAD
= 100mA
C
IN
= 1μF
C
OUT
= 1μF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
V
OUT
(V)
V
OUT
vs.
V
IN
(V
OUT
= 3.3V)
3.274
3.276
3.278
3.280
3.282
3.284
3.286
3.288
3.290
-40 -20 -10 0 20 40 85 125
ILOAD = 150mA
CIN = 1μF
COUT = 1μF
VIN = 4.3V
TEMPERATURE (°C)
VOUT (V)
Output Voltage vs. Temperature (VOUT = 3.3V)
0
0.5
1
1.5
2
2.5
3
3.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
I
LOAD
= 0
C
IN
= 1μF
C
OUT
= 1μF
V
IN
(V)
V
OUT
(V)
V
OUT
vs.
V
IN
(V
OUT
= 3.3V)
3.275
3.280
3.285
3.290
3.295
3.300
3.305
3.310
3.315
3.320
-40 -20 -10 0 20 40 85 125
ILOAD = 10mA
CIN = 1μF
COUT = 1μF
VIN = 4.3V
TEMPERATURE (°C)
VOUT (V)
Output Voltage vs. Temperature (VOUT = 3.3V)
TC1070/TC1071/TC1187
DS21353D-page 6 © 2007 Microchip Technology Inc.
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
4.985
4.990
4.995
5.000
5.005
5.010
5.015
5.020
5.025
-40 -20 -10 0 20 40 85 125
ILOAD = 10mA
VIN = 6V
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Output Voltage vs. Temperature (VOUT = 5V)
VOUT (V)
0
10
20
30
40
50
60
70
-40 -20 -10 0 20 40 85 125
GND CURRENT (
μ
A)
I
LOAD
= 10mA
V
IN
= 6V
C
IN
= 1μF
C
OUT
= 1μF
TEMPERATURE (°C)
Temperature
vs. Quiescent Current
(V
OUT
= 5V)
4.974
4.976
4.978
4.980
4.982
4.984
4.986
4.988
4.990
4.992
4.994
-40 -20 -10 0 20 40 85 125
ILOAD = 150mA
VIN = 6V
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Output Voltage vs. Temperature (VOUT = 5V)
VOUT (V)
Temperature vs. Quiescent Current (VOUT = 5V)
0
10
20
30
40
50
60
70
80
-40 -20 -10 0 20 40 85 125
GND CURRENT (μA)
ILOAD = 150mA
VIN = 6V
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
10.0
1.0
0.1
0.0
0.01K 0.1K 1K 10K 100K 1000K
FREQUENCY (Hz)
Output Noise vs. Frequency
NOISE (μV/√Hz)
RLOAD = 50Ω
COUT = 1μF
CIN = 1μF
1000
100
10
1
0.1
0.01
010 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
Stability Region vs. Load Current
COUT ESR (Ω)
COUT = 1μF
to 10μF
Stable Region
table Re
io
-30
-35
-40
-45
-50
-60
-55
-65
-70
-75
-80
0.01K 0.1K 1K 10K 100K 1000K
FREQUENCY (Hz)
Power Supply Rejection Ratio
PSRR (dB)
IOUT = 10mA
VINDC = 4V
VINAC = 100mVp-p
VOUT = 3V
CIN = 0
COUT = 1μF
© 2007 Microchip Technology Inc. DS21353D-page 7
TC1070/TC1071/TC1187
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
VOUT
VSHDN
Measure Rise Time of 3.3V LDO
Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 4.3V,
Temp = 25°C, Fall Time = 184μS
VSHDN
Measure Rise Time of 5.0V LDO
Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 6V,
Temp = 25°C, Fall Time = 192μS
VOUT
Thermal Shutdown Response of 5.0V LDO
Conditions: V
IN
= 6V, C
IN
= 0μF, C
OUT
= 1μF
I
LOAD
was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
V
OUT
Measure Fall Time of 3.3V LDO
Conditions: C
IN
= 1μF, C
OUT
= 1μF, I
LOAD
= 100mA, V
IN
= 4.3V,
Temp = 25°C, Fall Time = 52μS
V
OUT
V
SHDN
TC1070/TC1071/TC1187
DS21353D-page 8 © 2007 Microchip Technology Inc.
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
Measure Fall Time of 5.0V LDO
Conditions: C
IN
= 1μF, C
OUT
= 1μF, I
LOAD
= 100mA, V
IN
= 6V,
Temp = 25°C, Fall Time = 88μS
V
OUT
V
SHDN
© 2007 Microchip Technology Inc. DS21353D-page 9
TC1070/TC1071/TC1187
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Input Voltage Supply (VIN)
Connect unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is
necessary for proper operation. A 1 µF capacitor
connected from VIN to ground is recommended for
most applications.
3.2 Ground (GND)
Connect the unregulated input supply ground return to
GND. Also connect the negative side of the 1 µF typical
input decoupling capacitor close to GND and the
negative side of the output capacitor C1 to GND.
3.3 Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic high is
applied to this input. The regulator enters shutdown
when a logic low is applied to this input. During
shutdown, output voltage falls to zero and supply cur-
rent is reduced to 0.5 μA (maximum).
3.4 Output Voltage Adjust (ADJ)
Output voltage setting is programmed with a resistor
divider from VOUT to this input. A capacitor may also be
added to this input to reduce output noise (see
Section 4.2 “Output Capacitor”).
3.5 Regulated Voltage Output (Vout)
Connect the output load to VOUT of the LDO. Also
connect the positive side of the LDO output capacitor
as close as possible to the VOUT pin.
Pin No.
(5-Pin SOT-23) Symbol Description
1V
IN Unregulated supply input.
2 GND Ground terminal.
3SHDN
Shutdown control input.
4 ADJ Output voltage adjust terminal.
5V
OUT Regulated voltage output.
TC1070/TC1071/TC1187
DS21353D-page 10 © 2007 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
The TC1070, TC1071 and TC1187 are adjustable
output voltage regulators. (If a fixed version is desired,
please see the TC1014/TC1015/TC1185 data sheet.)
Unlike bipolar regulators, the TC1070, TC1071 and
TC1187 supply current does not increase with load
current. In addition, VOUT remains stable and within
regulation over the entire 0 mA to IOUTMAX operating
load current range, (an important consideration in RTC
and CMOS RAM battery back-up applications).
Figure shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05 μA
(typical), VOUT falls to zero volts.
FIGURE 4-1: Battery-Operated Supply
4.1 Adjust Input
The output voltage setting is determined by the values
of R1 and R2 (Equation 4-1). The ohmic values of these
resistors should be between 470K and 3M to minimize
bleeder current.
The output voltage setting is calculated using the
following equation.
EQUATION 4-1:
The voltage adjustment range of the TC1070, TC1071
and TC1187 is from VREF to (VIN – 0.05V). If so desired,
a small capacitor (10 pF to 0.01 μF) may be added to
the ADJ input to further reduce output noise.
4.2 Output Capacitor
A 1 μF (minimum) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1Ω and less
than 5.0Ω, and a resonant frequency above 1 MHz. A
1μF capacitor should be connected from VIN to GND
if there is more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used. (Since many
aluminum electrolytic capacitors freeze at
approximately -30°C, solid tantalums are recom-
mended for applications operating below -25°C.)
When operating from sources other than batteries,
supply-noise rejection and transient response can be
improved by increasing the value of the input and
output capacitors and employing passive filtering
techniques.
TC1070
TC1071
TC1187
V
OUT
SHDN
GND
C2
1 μF
+
V
IN
+2.45V
Shutdown Control
(from Power
Control Logic)
C1
1 μF
+
3.0V
Battery
+
C3
100 pF
to 0.01 μF
(Optional)
R1
470K
15
2
43 ADJ
R2
470K
VOUT = VREF x [ + 1]
R1
R2
© 2007 Microchip Technology Inc. DS21353D-page 11
TC1070/TC1071/TC1187
5.0 THERMAL CONSIDERATIONS
5.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
5.2 Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst-case actual power dissipation:
EQUATION 5-1:
The maximum allowable power dissipation
(Equation 4-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
junction-to-air (θJA). The 5-Pin SOT-23 package has a
θJA of approximately 220° C/Watt.
EQUATION 5-2:
Equation 5-1 can be used in conjunction with
Equation 4-2 to ensure regulator thermal operation is
within limits. For example:
Given:
VINMAX = 3.0V ±10%
VOUTMIN = 2.7V – 2%
ILOADMAX = 40 mA
TJMAX = 125°C
TAMAX = 55°C
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.10) – (2.7 x .0.98)]40 x 10–3
= 26.2 mW
Maximum allowable power dissipation:
In this example, the TC1070 dissipates a maximum of
26.2 mW which is below the allowable limit of 318 mW.
In a similar manner, Equation 5-1 and Equation 5-2 can
be used to calculate maximum current and/or input
voltage limits.
5.3 Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
Where:
PD
≈
(VINmax – VOUTmin)ILOADmax
PD
VINMAX
VOUTMIN
ILOADMAX
= Worst-case actual power dissipation
= Minimum regulator output voltage
= Maximum output (load) current
= Maximum voltage on VIN
PDMAX = (TJMAX – TAMAX)
θ
JA
where all terms are previously defined
.
PDMAX = (TJMAX – TAMAX)
θ
JA
= (125 – 55)
220
= 318 mW
TC1070/TC1071/TC1187
DS21353D-page 12 © 2007 Microchip Technology Inc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
6.2 Taping Form
5-Lead SOT-23-5 Example:
XXNN
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
XXNN
(V) TC1070
Code
TC1071
Code
TC1187
Code
Adjustable BANN BBNN R9NN
Carrier Tape, Number of Components Per Reel and Reel Size:
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23 8 mm 4 mm 3000 7 in.
Component Taping Orientation for 5-Pin SOT-23 (EIAJ SC-74A) Devices
Device
Marking
PIN 1
User Direction of Feed
Standard Reel Component Orientation
for TR Suffix Device
(Mark Right Side Up)
W
P
© 2007 Microchip Technology Inc. DS21353D-page 13
TC1070/TC1071/TC1187
5-Lead Plastic Small Outl ine Transistor (OT) [SOT-23]
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 5
Lead Pitch e 0.95 BSC
Outside Lead Pitch e1 1.90 BSC
Overall Height A 0.90 – 1.45
Molded Package Thickness A2 0.89 – 1.30
Standoff A1 0.00 – 0.15
Overall Width E 2.20 – 3.20
Molded Package Width E1 1.30 – 1.80
Overall Length D 2.70 – 3.10
Foot Length L 0.10 – 0.60
Footprint L1 0.35 – 0.80
Foot Angle φ0° – 30°
Lead Thickness c 0.08 – 0.26
Lead Width b 0.20 – 0.51
φ
N
b
E
E1
D
123
e
e1
A
A1
A2 c
L
L1
Microchip Technology Drawing C04-091B
TC1070/TC1071/TC1187
DS21353D-page 14 © 2007 Microchip Technology Inc.
© 2007 Microchip Technology Inc. DS21353D-page 15
TC1070/TC1071/TC1187
APPENDIX A: REVISION HISTORY
Revision D (March 2007)
• Ground current changed to 50 µA.
• Package type changed to SOT-23.
•Section 3.0 “Pin Descriptions”: Added pin
descriptions.
•Section 6.0 “Packaging Information”: Updated
packaging information.
Revision C (January 2006)
• Undocumented changes.
Revision B (May 2002)
• Undocumented changes.
Revision A (March 2002)
• Original Release of this Document.
TC1070/TC1071/TC1187
DS21353D-page 16 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21353D-page 17
TC1070/TC1071/TC1187
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. XXXXXX
PackageTemperature
Range
Device
Device TC1070: 50 mA, Adjustable CMOS LDO w/Shutdown
TC1071: 100 mA, Adjustable CMOS LDO w/Shutdown
TC1187: 150 mA, Adjustable CMOS LDO w/Shutdown
Temperature Range V = -40°C to +125°C
Package CT713 = Plastic small outline transistor (OT) SOT-23,
5 lead, (tape and reel).
Examples:
a) TC1070VCT713: 50 mA, Adjustable
5LD SOT-23 package
b) TC1071VCT713: 100 mA, Adjustable,
5LD SOT-23 package
c) TC1187VCT713: 150 mA, Adjustable
5LD SOT-23 package
TC1070/TC1071/TC1187
DS21353D-page 18 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21353D-page 19
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
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Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable
Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,
MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
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SQTP is a service mark of Microchip Technology Incorporated
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All other trademarks mentioned herein are property of their
respective companies.
© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC®
MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.
DS21353D-page 20 © 2007 Microchip Technology Inc.
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