feo06075 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 FA BPW 34 FAS BPW 34 FAS (E9087) 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter New: in SMT and as Reverse Gullwing 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 ... 5 1.8 1.4 5.08 mm spacing BPW 34 FA Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GEO06643 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Speziell geeignet fur den Wellenlangenbereich von 830 nm bis 880 nm Kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungsdichte BPW 34 FAS/(E9087): geeignet fur Vapor-Phase Loten und IR-Reflow Loten Features Especially suitable for the wavelength range of 830 nm to 880 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BPW 34 FAS/(E9087): Suitable for vapor-phase and IR-reflow soldering Anwendungen Applications IR-remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment Photointerrupters IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Geratefernsteuerung Lichtschranken fur Gleich- und Wechsellichtbetrieb Semiconductor Group 1 1998-08-27 1.1 0.9 6.7 6.2 0...5 0.2 0.1 0...0.1 0.3 1.2 1.1 Chip position feo06861 BPW 34 FA, BPW 34 FAS BPW 34 FAS (E9087) 1.7 1.5 BPW 34 FAS 4.0 3.7 0.9 0.7 4.5 4.3 1.8 0.2 Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06863 1.1 0.9 6.7 6.2 0...5 0.2 0.1 0...0.1 0.3 1.2 1.1 Chip position 1.7 1.5 BPW 34 FAS (E9087) 4.0 3.7 0.9 0.7 4.5 4.3 1.8 0.2 Cathode lead feo06916 Photosensitive area 2.65 mm x 2.65 mm GEO06916 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code BPW 34 FA Q62702-P1129 BPW 34 FAS Q62702-P463 BPW 34 FAS (E9087) Q62702-P1829 Semiconductor Group 2 1998-08-27 BPW 34 FA, BPW 34 FAS BPW 34 FAS (E9087) Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 85 C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C, = 870 nm) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 S 50 ( 40) A Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 880 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax 730 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area LxB 2.65 x 2.65 mm x mm Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 ( 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity S 0.65 A/W Quantenausbeute Quantum yield 0.93 Electrons Photon Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 320 ( 250) mV Semiconductor Group 3 LxW 1998-08-27 BPW 34 FA, BPW 34 FAS BPW 34 FAS (E9087) Kennwerte (TA = 25 C, = 870 nm) Characteristics (cont'd) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 23 A Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr, tf 20 ns Durchlaspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.03 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.9 x 10- 14 W Hz Nachweisgrenze, VR = 10 V, Detection limit D* 6.8 x 1012 cm * Hz W Semiconductor Group 4 1998-08-27 BPW 34 FA, BPW 34 FAS BPW 34 FAS (E9087) Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) OHF01430 100 P Srel % 80 Total power dissipation Ptot = f (TA) OHF01428 10 3 A 10 4 mV VO 10 2 10 3 70 VO 10 1 10 2 40 P 30 120 100 60 50 OHF00958 160 mW Ptot 140 80 60 10 0 10 1 -1 0 40 20 20 10 10 0 400 600 800 10 0 1000 nm 1200 10 2 W/cm 2 10 10 4 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080 4000 0 0 20 40 60 Ee Dark current IR = f (VR), E = 0 R 10 1 Dark current IR = f (TA), VR = 10 V, E = 0 OHF00081 100 C pA 80 C 100 TA OHF00082 10 3 R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 Semiconductor Group 0.4 0 20 40 60 80 5 100 120 1998-08-27