LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 36
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC464
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v04.0308
General Description
Features
Functional Diagram
The HMC464 is a GaAs MMIC PHEMT Distributed
Power Ampli er die which operates between 2 and
20 GHz. The ampli er provides 16 dB of gain, +30 dBm
Output IP3 and +26 dBm of output power at 1 dB gain
compression while requiring 290 mA from a +8V sup-
ply. Gain  atness is excellent from 2 - 18 GHz making
the HMC464 ideal for EW, ECM and radar driver
ampli er applications. The HMC464 ampli er I/O’s
are internally matched to 50 Ohms facilitating easy
integration into Multi-Chip-Modules (MCMs). All data
is with the chip in a 50 Ohm test  xture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
P1dB Output Power: +26 dBm
Gain: 16 dB
Output IP3: +30 dBm
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
Typical Applications
The HMC464 wideband driver is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Electrical Speci cations, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 2.0 - 6.0 6.0 - 18.0 18.0 - 20.0 GHz
Gain 14 16 13 16 11 14 dB
Gain Flatness ±0.25 ±0.5 ±0.75 dB
Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.03 0.04 dB/ °C
Input Return Loss 15 17 13 dB
Output Return Loss 14 12 11 dB
Output Power for 1 dB Compression (P1dB) 23.5 26.5 22 26 19 22 dBm
Saturated Output Power (Psat) 28 27.5 24.5 dBm
Output Third Order Intercept (IP3) 32 30 24 dBm
Noise Figure 4.0 4.0 6.0 dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.) 290 290 290 mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 37
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-30
-20
-10
0
10
20
0 4 8 12 16 20 24
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC464
v04.0308 GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output P1dB vs. Temperature Output Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Output IP3
vs. Supply Voltage @ 10 GHz, Fixed Vgg
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +9 Vdc
Gate Bias Voltage (Vgg1) -2 to 0 Vdc
Gate Bias Voltage (Vgg2) (Vdd -8) Vdc to Vdd
RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C) 4.64 W
Thermal Resistance
(channel to die bottom) 19.4 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 1A
Vdd (V) Idd (mA)
+7.5 292
+8.0 290
+8.5 288
Typical Supply Current vs. Vdd
10
12
14
16
18
20
22
24
26
28
30
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
10
14
18
22
26
30
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
16
20
24
28
32
36
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
IP3 (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
32
7.5 8 8.5
Gain
P1dB
Psat
IP3
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm
)
Vdd SUPPLY VOLTAGE (V)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC464
v04.0308 GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 39
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Pad Number Function Description Interface Schematic
1 RFIN This pad is AC coupled and matched to 50 Ohms.
2Vgg2
Gate Control 2 for ampli er. +3V should be applied to
Vgg2 for nominal operation.
3 RFOUT & Vdd
RF output for ampli er. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
4Vgg1
Gate Control 1 for ampli er. Adjust between -2 to 0V
to achieve Idd= 290 mA.
Die
Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
HMC464
v04.0308 GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 40
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagram
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
HMC464
v04.0308 GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 41
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin  lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin  lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC464
v04.0308 GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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Authorized Distributor
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