HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
High Reliability Features
Following are the high reliability features of SG2000 series:
The SG2000 series integrates seven NPN Darlington
pairs with internal suppression diodes to drive lamps,
relays, and solenoids in many military, aerospace, and
industrial applications that require severe environments.
All units feature open collector outputs with greater than
50V breakdown voltages combined with 500mA current
carrying capabilities.
Five different input configurations provide optimized
designs for interfacing with DTL, TTL, PMOS, or CMOS
drive signals. These devices are designed to operate
from -55°C to 125°C ambient temperature in a 16 pin
dual in line ceramic (J) package and 20 pin Leadless
Chip Carrier (LCC). The plastic SOIC (DW) is
designed to operate over the commercial temperature
range of 0°C to 70°C.
SG2000
December 2014 Rev. 1.4 www.microsemi.com 1
© 2014 Microsemi Corporation
Features
Description
Seven NPN Darlington Pairs
-55°C to 125°C Ambient Operating Temperature Range
Collector Currents to 600mA
Output Voltages from 50V to 95V
Internal Clamping Diodes for Inductive Loads
DTL, TTL, PMOS, or CMOS Compatible Inputs
Hermetic Ceramic Package
Available To MIL-STD-883 – 883, ¶ 1.2.1
MIL-M38510/14101BEA - SG2001J-JAN
MIL-M38510/14102BEA - SG2002J-JAN
MIL-M38510/14103BEA - SG2003J-JAN
MIL-M38510/14104BEA - SG2004J-JAN
- MSC-AMS Level "S" Processing Available
Partial Schematics
Figure 1 · Partial Schematics
Available to DSCC
-Standard Microcircuit Drawing (SMD)
kk
k
k
kk
k
kk
kk
k
kk
2
Peak Collector Current, IC
(SG2000, 2020) ......................................................
(SG2010) ................................................................
Operating Junction Temperature
Hermetic (J, L Packages) .........................................
Plastic (DW Package) ...............................................
Storage Temperature Range ..........................
Lead Temperature (Soldering 10 sec.) .........................
Absolute Maximum Ratings (Note 1)
Output Voltage, VCE
(SG2000, 2010 series) ................................................
(SG2020 series) ..........................................................
Input Voltage, VIN
(SG2002,3,4) ...............................................................
Continuous Input Current, IIN ........................................
50V
95V
30V
25mA
500mA
600mA
150°C
25°C
-65°C to 150°C
300°C
Note 1. Values beyond which damage may occur.
Thermal Data
J Package:
Thermal Resistance-Junction to Case, θJC ................... 30°C/W
Thermal Resistance-Junction to Ambient, θJA ............... 80°C/W
DW Package:
Thermal Resistance-Junction to Case, θJC .................... 35°C/W
Thermal Resistance-Junction to Ambient, θJA ................ 90°C/W
L Package:
Thermal Resistance-Junction to Case, θJC .................. 35°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 120°C/W
Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).
Note B. The above numbers for θJC are maximums for the limiting thermal
resistance of the package in a standard mounting configuration.
The θJA numbers are meant to be guidelines for the thermal
performance of the device/pc-board system. All of the above
assume no ambient airflow.
Recommended Operating Conditions (Note 2)
Output Voltage, VCE
SG2000, SG2010 series ..............................................
SG2020 series ............................................................. 50V
95V
Peak Collector Current, IC
SG2000, SG2020 series ...........................................
SG2010 series ........................................................
Operating Ambient Temperature Range
SG2000 Series - Hermetic ..........................
SG2000 Series - Plastic ..................................
50mA
500mA
-55°C to 125°C
0°C to 70°C
Note 2. Range over which the device is functional.
Selection Guide
Device VCE Max IC Max Logic Inputs
SG2001 50V 500mA General Purpose
PMOS, CMOS
SG2002 50V 500mA 14V-25V PMOS
SG2003 50V 500mA 5V TTL, CMOS
SG2004 50V 500mA 6V-15V CMOS, PMOS
SG2011 50V 600mA General Purpose
PMOS, CMOS
SG2012 50V 600mA 14V-25V PMOS
Device VCE Max IC Max Logic Inputs
SG2013 50V 600mA 5V TTL, CMOS
SG2014 50V 600mA 6V-15V CMOS, PMOS
SG2015 50V 600mA High Output TTL
SG2021 95V 500mA General Purpose
PMOS, CMOS
SG2023 95V 500mA 5V TTL, CMOS
SG2024 95V 500mA 6V-15V CMOS, PMOS
RoHS Peak Package Solder Reflow Temp. (40 sec. max. exp.)...... 260°C (+0, -5)
3
(Unless otherwise specified, these specifications apply over the operating ambient temperatures for SG2000 series - Hermetic - with -55°C ≤ TA ≤ 125°C
and SG2000 series - Plastic - with 0°C ≤ TA ≤ 70°C. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal
to the ambient temperature.)
Parameter Units
Min Typ Max
Limits
Test Conditions
All
SG2002
SG2004
All
SG2002
SG2003
SG2004
All
SG2002
SG2003
SG2004
SG2001
All
All
All
All
All
Applicable
Devices Temp.
SG2001 thru SG2004
Output Leakage Current (ICEX)
Collector - Emitter (VCE(SAT))
Input Current (IIN(ON))
Input Current (IIN(OFF))
Input Voltage (VIN(ON))
DC Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (VF)
TA = TMIN
TA = TMIN
TA = TMIN
TA = 25°C
TA = 25°C
TA = 25°C
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = 25°C
TA = 25°C
TA = 25°C
TA = 25°C
VCE = 50V
VCE = 50V, VIN = 6V
VCE = 50V, VIN = 1V
IC = 350mA, IB = 850µA
IC = 200mA, IB = 550µA
IC = 100mA, IB = 350µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
IC = 100mA, IB = 250µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
IC = 100mA, IB = 250µA
VIN = 17V
VIN = 3.85V
VIN = 5V
VIN = 12V
IC = 500µA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 350mA
0.5 EIN to 0.5 EOUT
0.5 EIN to 0.5 EOUT
VR = 50V
IF = 350mA
480
650
240
650
25
500
1000
1.6
1.3
1.1
1.25
1.1
0.9
1.6
1.3
1.1
850
930
350
1000
50
15
250
250
1.7
100
500
500
1.8
1.5
1.3
1.6
1.3
1.1
1.8
1.5
1.3
1300
1350
500
1450
18
13
3.3
3.6
3.9
2.4
2.7
3.0
6.0
8.0
10
12
5.0
6.0
7.0
8.0
25
1000
1000
50
2.0
µA
µA
µA
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
pF
ns
ns
µA
V
Note 3. These parameters, although guaranteed, are not tested in production.
Electrical Characteristics
mA
4
Parameter Units
Min Typ Max
Limits
Test Conditions
Applicable
Devices Temp.
SG2011 thru SG2015
Output Leakage Current (ICEX)
Collector - Emitter (VCE(SAT))
Input Current (IIN(ON))
Input Current (IIN(OFF))
Input Voltage (VIN(ON))
DC Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (VF)
All
SG2012
SG2014
All
SG2012
SG2013
SG2014
SG2015
All
SG2012
SG2013
SG2014
SG2015
SG2011
All
All
All
All
All
TA = TMIN
TA = TMIN
TA = TMIN
TA = 25°C
TA = 25°C
TA = 25°C
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMIN
TA = 25°C
TA = 25°C
TA = 25°C
TA = 25°C
VCE = 50V
VCE = 50V, VIN = 6V
VCE = 50V, VIN = 1V
IC = 500mA, IB = 1100µA
IC = 350mA, IB = 850µA
IC = 200mA, IB = 550µA
IC = 500mA, IB = 600µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
IC = 500mA, IB = 600µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
VIN = 17V
VIN = 3.85V
VIN = 5V
VIN = 12V
VIN = 3V
IC = 500 µA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 500mA
0.5 EIN to 0.5 EOUT
0.5 EIN to 0.5 EOUT
VR = 50V
IF = 350mA
IF = 500mA
480
650
240
650
1180
25
450
900
1.8
1.6
1.3
1.7
1.25
1.1
1.8
1.6
1.3
850
930
350
1000
1500
50
15
250
250
1.7
100
500
500
2.1
1.8
1.5
1.9
1.6
1.3
2.1
1.8
1.5
1300
1350
500
1450
2400
23.5
17
3.6
3.9
6.0
2.7
3.0
3.5
10
12
17
7.0
8.0
9.5
3.0
3.5
2.4
2.6
25
1000
1000
50
2.0
2.5
µA
µA
µA
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
pF
ns
ns
µA
V
V
Note 3. These parameters, although guaranteed, are not tested in production.
Electrical Characteristics (continued)
mA
5
Parameter Units
Min Typ Max
Limits
Test Conditions
Applicable
Devices Temp.
SG2021 thru SG2024
VCE = 95V
VCE = 95V, VIN = 1V
IC = 350mA, IB = 850µA
IC = 200mA, IB = 550µA
IC = 100mA, IB = 350µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
IC = 100mA, IB = 250µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
IC = 100mA, IB = 250µA
VIN = 3.85V
VIN = 5V
VIN = 12V
IC = 500µA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 350mA
0.5 EIN to 0.5 EOUT
0.5 EIN to 0.5 EOUT
VR = 95V
IF = 350mA
TA = TMIN
TA = TMIN
TA = TMIN
TA = 25°C
TA = 25°C
TA = 25°C
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = 25°C
TA = 25°C
TA = 25°C
TA = 25°C
All
SG2024
All
SG2023
SG2024
All
SG2023
SG2024
SG2021
All
All
All
All
All
Output Leakage Current (ICEX)
Collector - Emitter (VCE(SAT))
Input Current (IIN(ON))
Input Current (IIN(OFF))
Input Voltage (VIN(ON))
DC Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (VF)
650
240
650
25
500
1000
1.6
1.3
1.1
1.25
1.1
0.9
1.6
1.3
1.1
930
350
1000
50
15
250
250
1.7
100
500
1.8
1.5
1.3
1.6
1.3
1.1
1.8
1.5
1.3
1350
500
1450
13
3.3
3.6
3.9
2.4
2.7
3.0
6.0
8.0
10
12
5.0
6.0
7.0
8.0
25
1000
1000
50
2.0
µA
µA
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
pF
ns
ns
µA
V
Note 3. These parameters, although guaranteed, are not tested in production.
Electrical Characteristics (continued)
mA
6
Characteristic Curves
FIGURE 5. INPUT CHARACTERISTICS - SG2002 FIGURE 6. INPUT CHARACTERISTICS - SG2003 FIGURE 7. INPUT CHARACTERISTICS - SG2004
FIGURE 8. PEAK COLLECTOR CURRENT VS. DUTY CYCLE
FIGURE 3. OUTPUT CURRENT VS. INPUT VOLTAGE FIGURE 4. OUTPUT CURRENT VS. INPUT CURRENT
FIGURE 2. OUTPUT CHARACTERISTICS
7
No te1. Contact factory for JAN and DESC product availability.
2. All parts are viewed from the top.
3. See selection guide for specific device types.
Connection Diagrams and Ordering Information (See Notes Below)
Ambient
Temperature Range
Part No. (Note 3)PackageConnection Diagram
16-PIN CERAMIC DIP
J - PACKAGE SG2XXXJ-883B -55°C to 125°C
SG2023J-DESC -55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
SG2001J-JAN
SG2002J-JAN
SG2003J-JAN
SG2004J-JAN
SG2XXXJ -55°C to 125°C
1
7
6
5
4
3
2
8
10
9
11
12
13
14
16
15
SG2003DW 0°C to 70°C
SG2023DW 0°C to 70°C
16-PIN PLASTIC SOIC
DW - PACKAGE
20-PIN CERAMIC
LEADLESS CHIP CARRIER
L- PACKAGE
-55°C to 125°CSG2XXXL-883B
SG2XXXL -55°C to 125°C18
4
9
3192012
14
15
17
16
8
7
6
5
13121110
DW Package: RoHS Compliant / Pb-free Transition DC: 0516
DW Package: RoHS / Pb-free 100% Matte Tin Lead Finish
DW Package (Not Pictured) is 16-Pin Wide Body SOIC, same pinout as J package pictured above.
4.
Hermetic Packages J and L use Pb37/Sn63 hot solder lead finish, contact factory for availability of RoHS versions.
5.
Package Outline Dimensions
Controlling dimensions are in inches, metric equivalents are shown for general information.
Note:
Dimensions do not include protrusions; these shall
not exceed 0.155mm (.006”) on any side. Lead
dimension shall not include solder coverage.
Figure 9 · J 16-Pin CERDIP Package Dimensions
8
D
e
9
16
18
eA
b
H
b2
c
Seating Plane
E
QA
L
DIM MILLIMETERS INCHES
MIN MAX MIN MAX
A 5.08 0.200
b 0.38 0.51 0.015 0.020
b2 1.04 1.65 0.045 0.065
c 0.20 0.38 0.008 0.015
D 19.30 19.94 0.760 0.785
E 5.59 7.11 0.220 0.280
e 2.54 BSC* 0.100 BSC
eA 7.37 7.87 0.290 0.310
H 0.63 1.78 0.025 0.070
L 3.18 5.08 0.125 0.200
α - 15° - 15°
Q 0.51 1.02 0.020 0.040
*BSC: Basic Spacing Between Centers
α
Dim MILLIMETERS INCHES
MIN MAX MIN MAX
A 2.06 2.65 0.081 0.104
A1 0.10 0.30 0.004 0.012
A2 2.03 2.55 0.080 0.100
B 0.33 0.51 0.013 0.020
c 0.23 0.32 0.009 0.013
D 10.08 10.50 0.397 0.413
E 7.40 7.60 0.291 0.299
e 1.27 BSC 0.05 BSC
H 10.00 10.65 0.394 0.419
L 0.40 1.27 0.016 0.050
θ 0° 8° 0° 8°
*LC - 0.10 - 0.004
*Lead co planarity
Note:
Dimensions do not include protrusions; these shall
not exceed 0.155mm (.006”) on any side. Lead
dimension shall not include solder coverage.
Dimensions are in mm, inches are for reference only.
Figure 10 · DW 16-Pin SOWB Package Dimensions
D
E3
L
L2
B1 eB3
A2
A1
A
1
3
8
13
18
h
E
Dim MILLIMETERS INCHES
MIN MAX MIN MAX
D/E 8.64 9.14 0.340 0.360
E3 - 8.128 - 0.320
e 1.270 BSC 0.050 BSC
B1 0.635 TYP 0.025 TYP
L 1.02 1.52 0.040 0.060
A 1.626 2.286 0.064 0.090
h 1.016 TYP 0.040 TYP
A1 1.372 1.68 0.054 0.066
A2 - 1.168 - 0.046
L2 1.91 2.41 0.075 0.95
B3 0.203R 0.008R
Note:
All exposed metalized area shall be gold plated
60 micro-inch minimum thickness over nickel
plated unless otherwise specified in purchase
order.
Figure 11 · L 20-Pin Ceramic LCC Package Outline Dimensions
9
Package Outline Dimensions (continued)
SG2000.1/12.14
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One Enterprise, Aliso Viejo,
CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
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Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or
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