SG2000 HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS Description Features The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require severe environments. All units feature open collector outputs with greater than 50V breakdown voltages combined with 500mA current carrying capabilities. Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These devices are designed to operate from -55C to 125C ambient temperature in a 16 pin dual in line ceramic (J) package and 20 pin Leadless Chip Carrier (LCC). The plastic SOIC (DW) is designed to operate over the commercial temperature range of 0C to 70C. Seven NPN Darlington Pairs -55C to 125C Ambient Operating Temperature Range Collector Currents to 600mA Output Voltages from 50V to 95V Internal Clamping Diodes for Inductive Loads DTL, TTL, PMOS, or CMOS Compatible Inputs Hermetic Ceramic Package High Reliability Features Following are the high reliability features of SG2000 series: Available To MIL-STD-883 - 883, 1.2.1 Available to DSCC - Standard Microcircuit Drawing (SMD) MIL-M38510/14101BEA - SG2001J-JAN MIL-M38510/14102BEA - SG2002J-JAN MIL-M38510/14103BEA - SG2003J-JAN MIL-M38510/14104BEA - SG2004J-JAN - MSC-AMS Level "S" Processing Available Partial Schematics k k k k k k k k k k k k k k Figure 1 * Partial Schematics December 2014 Rev. 1.4 www.microsemi.com (c) 2014 Microsemi Corporation 1 Absolute Maximum Ratings (Note 1) Output Voltage, VCE (SG2000, 2010 series) ................................................ 50V (SG2020 series) .......................................................... 95V Input Voltage, VIN (SG2002,3,4) ............................................................... 30V Continuous Input Current, IIN ........................................ 25mA Peak Collector Current, IC (SG2000, 2020) ...................................................... 500mA (SG2010) ................................................................ 600mA Operating Junction Temperature Hermetic (J, L Packages) ......................................... 150C Plastic (DW Package) ............................................... 25C Storage Temperature Range .......................... -65C to 150C Lead Temperature (Soldering 10 sec.) ......................... 300C Note 1. Values beyond which damage may occur. RoHS Peak Package Solder Reflow Temp. (40 sec. max. exp.)...... 260C (+0, -5) Thermal Data J Package: Thermal Resistance-Junction to Case, JC ................... 30C/W Thermal Resistance-Junction to Ambient, JA ............... 80C/W DW Package: Thermal Resistance-Junction to Case, JC .................... 35C/W Thermal Resistance-Junction to Ambient, JA ................ 90C/W L Package: Thermal Resistance-Junction to Case, JC .................. 35C/W Thermal Resistance-Junction to Ambient, JA ............ 120C/W Note A. Junction Temperature Calculation: TJ = T A + (PD x JA). Note B. The above numbers for JC are maximums for the limiting thermal resistance of the package in a standard mounting configuration. The JA numbers are meant to be guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. Recommended Operating Conditions (Note 2) Peak Collector Current, IC SG2000, SG2020 series ........................................... 50mA SG2010 series ........................................................ 500mA Operating Ambient Temperature Range SG2000 Series - Hermetic .......................... -55C to 125C SG2000 Series - Plastic .................................. 0C to 70C Output Voltage, VCE SG2000, SG2010 series .............................................. 50V SG2020 series ............................................................. 95V Note 2. Range over which the device is functional. Selection Guide Device VCE Max IC Max Logic Inputs Device VCE Max IC Max Logic Inputs SG2001 50V 500mA SG2002 SG2003 SG2004 SG2011 50V 50V 50V 50V 500mA 500mA 500mA 600mA SG2013 SG2014 SG2015 SG2021 50V 50V 50V 95V 600mA 600mA 600mA 500mA SG2023 SG2024 95V 95V 500mA 500mA 5V TTL, CMOS 6V-15V CMOS, PMOS High Output TTL General Purpose PMOS, CMOS 5V TTL, CMOS 6V-15V CMOS, PMOS SG2012 50V 600mA General Purpose PMOS, CMOS 14V-25V PMOS 5V TTL, CMOS 6V-15V CMOS, PMOS General Purpose PMOS, CMOS 14V-25V PMOS 2 Electrical Characteristics (Unless otherwise specified, these specifications apply over the operating ambient temperatures for SG2000 series - Hermetic - with -55C TA 125C and SG2000 series - Plastic - with 0C TA 70C. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) SG2001 thru SG2004 Parameter Output Leakage Current (ICEX) Collector - Emitter (VCE(SAT)) Applicable Devices All SG2002 SG2004 All Input Current (IIN(ON)) SG2002 SG2003 SG2004 Input Current (IIN(OFF)) Input Voltage (VIN(ON)) All SG2002 SG2003 SG2004 DC Forward Current Transfer Ratio (hFE) Input Capacitance (CIN) (Note 3) Turn-On Delay (TPLH) Turn-Off Delay (TPHL) Clamp Diode Leakage Current (IR) Clamp Diode Forward Voltage (VF) SG2001 All All All All All Temp. Test Conditions VCE = 50V VCE = 50V, VIN = 6V VCE = 50V, VIN = 1V IC = 350mA, IB = 850A IC = 200mA, IB = 550A IC = 100mA, IB = 350A IC = 350mA, IB = 500A IC = 200mA, IB = 350A IC = 100mA, IB = 250A IC = 350mA, IB = 500A IC = 200mA, IB = 350A IC = 100mA, IB = 250A VIN = 17V VIN = 3.85V VIN = 5V VIN = 12V IC = 500A VCE = 2V, IC = 300mA VCE = 2V, IC = 300mA VCE = 2V, IC = 200mA VCE = 2V, IC = 250mA VCE = 2V, IC = 300mA VCE = 2V, IC = 200mA VCE = 2V, IC = 250mA VCE = 2V, IC = 300mA VCE = 2V, IC = 125mA VCE = 2V, IC = 200mA VCE = 2V, IC = 275mA VCE = 2V, IC = 350mA VCE = 2V, IC = 125mA VCE = 2V, IC = 200mA VCE = 2V, IC = 275mA VCE = 2V, IC = 350mA VCE = 2V, IC = 350mA VCE = 2V, IC = 350mA TA TA TA TA TA TA TA TA TA = = = = = = = = = TMIN TMIN TMIN 25C 25C 25C TMAX TMAX TMAX TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA = = = = = = = = = = = = = = = = = = = = = = TMAX TMIN TMAX TMIN TMIN TMIN TMAX TMAX TMAX TMIN TMIN TMIN TMIN TMAX TMAX TMAX TMAX TMIN 25C 25C 25C 0.5 EIN to 0.5 EOUT 25C 0.5 EIN to 0.5 EOUT VR = 50V IF = 350mA Note 3. These parameters, although guaranteed, are not tested in production. 3 Limits Units Min Typ Max 100 A 500 A 500 A 1.6 1.8 V 1.3 1.5 V 1.1 1.3 V 1.25 1.6 V 1.1 1.3 V 0.9 1.1 V 1.6 1.8 V 1.3 1.5 V 1.1 1.3 V 480 850 1300 A 650 930 1350 A 240 350 500 A 650 1000 1450 A 25 50 A 18 V 13 V 3.3 V 3.6 V 3.9 V 2.4 V 2.7 V 3.0 V 6.0 V 8.0 V 10 V 12 V 5.0 V 6.0 V 7.0 V 8.0 V 500 mA 1000 15 25 pF 250 1000 ns 250 1000 ns 50 A 1.7 2.0 V Electrical Characteristics (continued) SG2011 thru SG2015 Parameter Output Leakage Current (ICEX) Collector - Emitter (VCE(SAT)) Input Current (IIN(ON)) Input Current (IIN(OFF)) Input Voltage (VIN(ON)) Applicable Devices All SG2012 SG2014 All SG2015 All SG2012 SG2014 SG2015 SG2011 All All All All All Test Conditions VCE = 50V VCE = 50V, VIN = 6V VCE = 50V, VIN = 1V IC = 500mA, IB = 1100A IC = 350mA, IB = 850A IC = 200mA, IB = 550A IC = 500mA, IB = 600A IC = 350mA, IB = 500A IC = 200mA, IB = 350A IC = 500mA, IB = 600A IC = 350mA, IB = 500A IC = 200mA, IB = 350A VIN = 17V VIN = 3.85V VIN = 5V VIN = 12V VIN = 3V IC = 500A VCE = 2V, IC = 500mA VCE = 2V, IC = 500mA VCE = 2V, IC = 250mA VCE = 2V, IC = 300mA VCE = 2V, IC = 500mA VCE = 2V, IC = 250mA VCE = 2V, IC = 300mA VCE = 2V, IC = 500mA VCE = 2V, IC = 275mA VCE = 2V, IC = 350mA VCE = 2V, IC = 500mA VCE = 2V, IC = 275mA VCE = 2V, IC = 350mA VCE = 2V, IC = 500mA VCE = 2V, IC = 350mA VCE = 2V, IC = 500mA VCE = 2V, IC = 350mA VCE = 2V, IC = 500mA VCE = 2V, IC = 500mA VCE = 2V, IC = 500mA TA TA TA TA TA TA TA TA TA = = = = = = = = = TMIN TMIN TMIN 25C 25C 25C TMAX TMAX TMAX TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA = = = = = = = = = = = = = = = = = = = = = = = = TMAX TMIN TMAX TMIN TMIN TMIN TMAX TMAX TMAX TMIN TMIN TMIN TMAX TMAX TMAX TMIN TMIN TMAX TMAX TMIN 25C 25C 25C 0.5 EIN to 0.5 EOUT 25C 0.5 EIN to 0.5 EOUT VR = 50V IF = 350mA IF = 500mA SG2012 SG2013 SG2014 SG2013 DC Forward Current Transfer Ratio (hFE) Input Capacitance (CIN) (Note 3) Turn-On Delay (TPLH) Turn-Off Delay (TPHL) Clamp Diode Leakage Current (IR) Clamp Diode Forward Voltage (VF) Temp. Note 3. These parameters, although guaranteed, are not tested in production. 4 Limits Units Min Typ Max 100 A 500 A 500 A 1.8 2.1 V 1.6 1.8 V 1.3 1.5 V 1.7 1.9 V 1.25 1.6 V 1.1 1.3 V 1.8 2.1 V 1.6 1.8 V 1.3 1.5 V 480 850 1300 A 650 930 1350 A 240 350 500 A 650 1000 1450 A 1180 1500 2400 A 25 50 A 23.5 V 17 V 3.6 V 3.9 V 6.0 V 2.7 V 3.0 V 3.5 V 10 V 12 V 17 V 7.0 V 8.0 V 9.5 V 3.0 V 3.5 V 2.4 V 2.6 V 450 mA 900 15 25 pF 250 1000 ns 250 1000 ns 50 A 1.7 2.0 V 2.5 V Electrical Characteristics (continued) SG2021 thru SG2024 Parameter Output Leakage Current (ICEX) Collector - Emitter (VCE(SAT)) Applicable Devices All SG2024 All Input Current (IIN(ON)) SG2023 SG2024 Input Current (IIN(OFF)) Input Voltage (VIN(ON)) All SG2023 SG2024 DC Forward Current Transfer Ratio (hFE) Input Capacitance (CIN) (Note 3) Turn-On Delay (TPLH) Turn-Off Delay (TPHL) Clamp Diode Leakage Current (IR) Clamp Diode Forward Voltage (VF) SG2021 All All All All All Temp. TA TA TA TA TA TA TA TA TA = = = = = = = = = TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA TA = = = = = = = = = = = = = = = = = = = = = TMIN TMIN TMIN 25C 25C 25C TMAX TMAX TMAX Test Conditions VCE = 95V VCE = 95V, VIN = 1V IC = 350mA, IB = 850A IC = 200mA, IB = 550A IC = 100mA, IB = 350A IC = 350mA, IB = 500A IC = 200mA, IB = 350A IC = 100mA, IB = 250A IC = 350mA, IB = 500A IC = 200mA, IB = 350A IC = 100mA, IB = 250A VIN = 3.85V VIN = 5V VIN = 12V IC = 500A VCE = 2V, IC = 300mA VCE = 2V, IC = 200mA VCE = 2V, IC = 250mA VCE = 2V, IC = 300mA VCE = 2V, IC = 200mA VCE = 2V, IC = 250mA VCE = 2V, IC = 300mA VCE = 2V, IC = 125mA VCE = 2V, IC = 200mA VCE = 2V, IC = 275mA VCE = 2V, IC = 350mA VCE = 2V, IC = 125mA VCE = 2V, IC = 200mA VCE = 2V, IC = 275mA VCE = 2V, IC = 350mA VCE = 2V, IC = 350mA VCE = 2V, IC = 350mA TMAX TMAX TMIN TMIN TMIN TMAX TMAX TMAX TMIN TMIN TMIN TMIN TMAX TMAX TMAX TMAX TMIN 25C 25C 25C 0.5 EIN to 0.5 EOUT 25C 0.5 EIN to 0.5 EOUT VR = 95V IF = 350mA Note 3. These parameters, although guaranteed, are not tested in production. 5 Min 650 240 650 25 500 1000 Limits Units Typ Max 100 A 500 A 1.6 1.8 V 1.3 1.5 V 1.1 1.3 V 1.25 1.6 V 1.1 1.3 V 0.9 1.1 V 1.6 1.8 V 1.3 1.5 V 1.1 1.3 V 930 1350 A 350 500 A 1000 1450 A 50 A 13 V 3.3 V 3.6 V 3.9 V 2.4 V 2.7 V 3.0 V 6.0 V 8.0 V 10 V 12 V 5.0 V 6.0 V 7.0 V 8.0 V mA 15 25 250 1000 250 1000 50 1.7 2.0 pF ns ns A V Characteristic Curves FIGURE 2. OUTPUT CHARACTERISTICS FIGURE 5. INPUT CHARACTERISTICS - SG2002 FIGURE 3. OUTPUT CURRENT VS. INPUT VOLTAGE FIGURE 6. INPUT CHARACTERISTICS - SG2003 FIGURE 8. PEAK COLLECTOR CURRENT VS. DUTY CYCLE 6 FIGURE 4. OUTPUT CURRENT VS. INPUT CURRENT FIGURE 7. INPUT CHARACTERISTICS - SG2004 Connection Diagrams and Ordering Information (See Notes Below) Package 16-PIN CERAMIC DIP J - PACKAGE Ambient Part No. (Note 3) Temperature Range SG2XXXJ-883B SG2023J-DESC SG2001J-JAN SG2002J-JAN SG2003J-JAN SG2004J-JAN SG2XXXJ 16-PIN PLASTIC SOIC DW - PACKAGE SG2003DW SG2023DW 20-PIN CERAMIC LEADLESS CHIP CARRIER L- PACKAGE SG2XXXL-883B SG2XXXL Connection Diagram -55C to 125C -55C to 125C -55C to 125C -55C to 125C -55C to 125C -55C to 125C -55C to 125C 0C to 70C 0C to 70C 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 DW Package: RoHS Compliant / Pb-free Transition DC: 0516 DW Package: RoHS / Pb-free 100% Matte Tin Lead Finish 3 -55C to 125C -55C to 125C 1 20 18 5 17 6 16 7 15 8 14 10 11 12 Contact factory for JAN and DESC product availability. All parts are viewed from the top. See selection guide for specific device types. DW Package (Not Pictured) is 16-Pin Wide Body SOIC, same pinout as J package pictured above. Hermetic Packages J and L use Pb37/Sn63 hot solder lead finish, contact factory for availability of RoHS versions. 7 19 4 9 Note 1. 2. 3. 4. 5. 2 13 Package Outline Dimensions Controlling dimensions are in inches, metric equivalents are shown for general information. D 16 9 1 8 E eA b2 Q A Seating Plane L c H e b DIM MILLIMETERS MIN MAX INCHES MIN MAX A b b2 c D E e eA H L Q 5.08 0.38 0.51 1.04 1.65 0.20 0.38 19.30 19.94 5.59 7.11 2.54 BSC* 7.37 7.87 0.63 1.78 3.18 5.08 15 0.51 1.02 0.200 0.015 0.020 0.045 0.065 0.008 0.015 0.760 0.785 0.220 0.280 0.100 BSC 0.290 0.310 0.025 0.070 0.125 0.200 15 0.020 0.040 *BSC: Basic Spacing Between Centers Note: Dimensions do not include protrusions; these shall not exceed 0.155mm (.006") on any side. Lead dimension shall not include solder coverage. Figure 9 * J 16-Pin CERDIP Package Dimensions Dim MILLIMETERS MIN MAX INCHES MIN MAX A 2.06 2.65 0.081 0.104 A1 0.10 0.30 0.004 0.012 A2 2.03 2.55 0.080 0.100 B 0.33 0.51 0.013 0.020 c 0.23 0.32 0.009 0.013 D 10.08 10.50 0.397 0.413 E 7.40 7.60 0.291 0.299 e 1.27 BSC H 10.00 10.65 0.05 BSC 0.394 0.419 L 0.40 1.27 0.016 0.050 0 8 *LC - 0.10 0 - 8 0.004 *Lead co planarity Note: Dimensions do not include protrusions; these shall not exceed 0.155mm (.006") on any side. Lead dimension shall not include solder coverage. Dimensions are in mm, inches are for reference only. Figure 10 * DW 16-Pin SOWB Package Dimensions 8 Package Outline Dimensions (continued) E3 D Dim D/E E3 E e B1 A A1 L2 9.14 0.340 0.360 - 8.128 - 0.320 1.270 BSC 0.050 BSC 0.635 TYP 0.025 TYP 1.52 0.040 0.060 A 1.626 2.286 0.064 0.090 1.016 TYP 1.372 1.68 A2 - L2 1.91 B3 0.040 TYP 0.054 0.066 1.168 - 0.046 2.41 0.075 0.95 0.203R 0.008R Note: 1 All exposed metalized area shall be gold plated 60 micro-inch minimum thickness over nickel plated unless otherwise specified in purchase order. 13 h A2 8.64 1.02 A1 3 INCHES MIN MAX L h L 8 MILLIMETERS MIN MAX 18 B1 e B3 Figure 11 * L 20-Pin Ceramic LCC Package Outline Dimensions 9 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,400 employees globally. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 E-mail: sales.support@microsemi.com (c) 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. 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