STL42P6LLF6 P-channel 60 V, 0.023 typ., 42 A STripFETTM F6 Power MOSFET in a PowerFLATTM 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID STL42P6LLF6 60 V 0.026 @ 10 V 42 A 1 2 3 4 * * * * PowerFLATTM 5x6 Figure 1: Internal schematic diagram Applications * D(5, 6, 7, 8) Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Switching applications Description This device is a P-channel Power MOSFET developed using the STripFETTM F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. G(4) For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. S(1, 2, 3) AM01475v4 Table 1: Device summary Order code Marking Package Packaging STL42P6LLF6 42P6LLF6 PowerFLATTM 5x6 Tape and reel February 2015 DocID025457 Rev 3 This is information on a product in full production. 1/14 www.st.com Contents STL42P6LLF6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/14 4.1 PowerFLATTM 5x6 package information ............................................ 9 4.2 PowerFLATTM 5x6 packing information ........................................... 11 Revision history ............................................................................ 13 DocID025457 Rev 3 STL42P6LLF6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage 20 V (1) ID Drain current (continuous) at TC = 25 C 42 A (1) ID Drain current (continuous) at TC = 100 C 30 A Drain current (pulsed) 168 A (1)(3) ID (2) ID Drain current (continuous) at Tpcb= 25 C 9 A (2) ID Drain current (continuous) at Tpcb= 100 C 6.6 A (2)(3) IDM Drain current (pulsed) 36 A PTOT (1) Total dissipation at TC = 25 C 100 W PTOT (2) Total dissipation at Tpcb= 25 C 4.8 W -55 to 175 C 175 C Value Unit Thermal resistance junction-case max 1.5 C/W Thermal resistance junction-pcb max 31.3 C/W Tstg Storage temperature Tj Maximum junction temperature Notes: (1) (2) (3) The value is limited by Rthj-case. The value is limited by Rthj-pcb. Pulse width is limited by safe operating area. Table 3: Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Notes: (1) When mounted on FR-4 board of 1 inch, 2 Oz Cu, t < 10 s. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. DocID025457 Rev 3 3/14 Electrical characteristics 2 STL42P6LLF6 Electrical characteristics (TC= 25 C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage Drain current IGSS VGS = 0 V, ID = 250 A Min. Typ. Max. 60 Unit V VGS = 0 V, VDS = 60 V 1 A VGS = 0 V, VDS = 60 V, TC = 125 C 10 A Gate-body leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A 2.5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 4.5 A 0.023 0.026 VGS = 4.5 V, ID= 4.5 A 0.028 0.034 Min. Typ. Max. Unit - 3780 - pF - 262 - pF - 170 - pF - 30 - nC - 10.8 - nC - 10.5 - nC - 1.7 - Min. Typ. Max. Unit - 51.4 - ns - 39 - ns - 171 - ns - 21 - ns 1 Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge RG Gate input resistance Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 9 A, VGS = 4.5 V (see Figure 14: "Gate charge test circuit" ) ID = 0 A, gate DC bias = 0 V, f = 1 MHz, magnitude of alternative signal = 20 mV Table 6: Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 30 V, ID = 4.5 A RG = 4.7 , VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" ) For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. 4/14 DocID025457 Rev 3 STL42P6LLF6 Electrical characteristics Table 7: Source drain diode Symbol VSD (1) Parameter Test conditions Forward on voltage VGS = 0 V, ISD = 9 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 9 A, di/dt = 100 A/s, VDD = 4.8 V, Tj = 150 C (see Figure 15: "Test circuit for inductive load switching and diode recovery times" ) Min. Typ. - Max. Unit 1.1 V - 34 ns - 48 nC - 2.8 A Notes: (1) Pulse test: pulse duration = 300 s, duty cycle 1.5% For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. DocID025457 Rev 3 5/14 Electrical characteristics 2.2 6/14 STL42P6LLF6 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs temperature Figure 7: Normalized V(BR)DSS vs temperature DocID025457 Rev 3 STL42P6LLF6 Electrical characteristics Figure 8: Static drain-source on-resistance Figure 9: Normalized on-resistance vs. temperature Figure 10: Gate charge vs gate-source voltage Figure 11: Capacitance variations voltage Figure 12: Source-drain diode forward characteristics DocID025457 Rev 3 7/14 Test circuits 3 STL42P6LLF6 Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times 8/14 DocID025457 Rev 3 STL42P6LLF6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of (R) (R) ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. (R) ECOPACK is an ST trademark. 4.1 PowerFLATTM 5x6 package information Figure 16: PowerFLATTM 5x6 type R package outline DocID025457 Rev 3 9/14 Package information STL42P6LLF6 Table 8: PowerFLATTM 5x6 type R mechanical data mm Dim. Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 D 5.00 5.20 5.40 E 5.95 6.15 6.35 D2 4.11 e 0.50 4.31 1.27 L 0.60 0.80 K 1.275 1.575 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 Figure 17: PowerFLATTM 5x6 recommended footprint (dimensions are in mm) 10/14 DocID025457 Rev 3 STL42P6LLF6 PowerFLATTM 5x6 packing information Figure 18: PowerFLATTM 5x6 tape (dimensions are in mm) P0 4.00.1 (II) P2 2.00.1 (I) T (0.30 0.05) E1 1.750.1 Y 0. 20 Do O1.550.05 W(12.000.3) R F(5.500.1)(III) CL EF D1 O1.5 MIN. Bo (5.300.1) 4.2 Package information REF .R0 .50 Y P1(8.000.1) Ao(6.300.1) Ko (1.200.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. (II) Cumulative tolerance of 10 sprocket holes is 0.20 . (III) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs 8234350_Tape_rev_C Figure 19: PowerFLATTM 5x6 package orientation in carrier tape DocID025457 Rev 3 11/14 Package information STL42P6LLF6 Figure 20: PowerFLATTM 5x6 reel 12/14 DocID025457 Rev 3 STL42P6LLF6 5 Revision history Revision history Table 9: Document revision history Date Revision 28-Oct-2013 1 First release. 2 Modified: Figure 1: "Internal schematic diagram" Updated: Section 10: "Package mechanical data" Minor text changes 3 In title description on cover page, changed 0.02 to 0.023 In features table on cover page, changed 0.028 to 0.026 Updated Table 2: Absolute maximum ratings Updated Table 4: Static - renamed table and updated Static drainsource on-resistance values Updated Table 5: Dynamic - test conditions and all typical values Updated Table 6: Switching times - test conditions and all typical values Updated Table 7: Source-drain diode - test conditions and all typical values Added Section 2.2: Electrical characteristics (curves) Updated Section 4: Package mechanical data Minor text changes 25-Aug-2014 24-Feb-2015 Changes DocID025457 Rev 3 13/14 STL42P6LLF6 IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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