~ MOSPOWER Cross Reference List (Cont) SIEMENS (Cont'd) Industry BVpss fDS(on) Siliconix . BVpss 'DS(on) Part No. (Volts) (Ohms), PACKAGE | Equivalent (Volts) (Ohms) BUZ 14 50 0.04 TO-3 _ _ _ BUZ 15 50 0.03 TO-3 oo _ BUZ 20 100 0.20 TO-220 VN1000D 100 0.18 BUZ 21 100 0.10 TO-220 IRF522 100 0.4 BUZ 23 100 0.20 TO-3 VN1000A 100 0.18 BUZ 24 100 0.06 TO-3 _ _ _ BUZ 25 100 Q.10 TO-3 IRF540 100 0.085. BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 BUZ 33. 200 0.75 TO-3 IRF232 200 0.6 BUZ 34 200 0.20 TO-3 IRF240 200 0.18 BUZ 40 500 45 TO-220 IRF822 500 4.0 BUZ 41 500 1.1 TOQ-220 IRF842 500 1.1 BUZ 43 500 45 TO-3 - IRF422 500 40 BUZ 44 500 1.1 TO-3 IRF442 500 1.1 BUZ 45 500 0.6 TO-3 IRF452 500 0.5 BUZ 50 1000 3.5 TO-220 _ _ _ BUZ 53 1000 3.5 TO-3 | _ _ _ BUZ 54 1000 2.0 TO-3 _ _ _ BUZ 80 800 2.6 TO-220 _ _ _ BUZ 83 800 2.6 TO-3 _ _ _ BUZ 84 800 1.3 TO-3 - _ ~ SONY 28J54 210 1.0 TO~220 _ _ _ 28K173 210 1.0 TO-220 IRF232 200V 0.6 SUPERTEX VNO104N1 40 4.0 TO-3 VN67AA 60 3.5 VNO104N2 40 4.0 TO-39 VN67AB 60 3.5 VNO104N3 40 4.0 TO-92 _ _ _ VNO104N4 40 4.0. TO-202 VN46AF 40 3.0 VNO104N5 40 4.0 TO+220 VN46AD 40 3.0 VNO104N6 40 4.0 DIP VQ1004J** 60 3.5 VNO106N1 60 4.0. TO-3 VN67AA 60 3.5 VNO106N2 60 4.0 TO-39 VN67AB 60 3.5 VNO106N3 60 4.0 TO-92 _ _ _ VNO106N4 60 4.0 TO-202 VN67AF 60 3.5 VNO106N5 60 4.0 TO-220 VN67AD 60 3.5 VNO106N6 60 4.0 DIP VQ1004J** 60 3.5 VNO108N1 80 4.0 TO-3 2N6658 90 4.0 VNO108N2 80 4.0 TO-39 2N6661 90 4.0 VN0108N3 80 4.0 TO-92 _ _ _ VNO108N4 80 4.0 TO-202 VN88AF 80 4.0 VNO108N5 80 4.0 TO-220 VN88AD 80 4.0 VNO108N6 80 4.0 DIP VQ1006J** 90 4.5 VNO109N14 90 40 TO-3 2N6653, 90 4.0 VNO109N2 90 4.0 TO-39 2N6661 90 4.0 VN0O109N3 90 4.0 TO-92 _ _ _ VNO109N4 90 40 TO-202 _ _ _ VNO109N5 90 4.0 TO-220 . _ _ VNO109N6 90 4.0 DIP VQ1006J** 90 45. VN0204N1 40 2.0 TO-3 _ _ _ VNO204N2 40 2.0 TO-39 _ _ - VNO204N5 40 2.0 TO-220 _ _ _ VNO204N6 40 2.0 DIP _ _ _ VNO206N1 60 2.0 TO-3 _ _ _- VNO206N2 60 2.0 TO-39 _ _ _ VNO206N5 - 60 2.0 TO-220 _- _ _ VNO206N6 60 2.0 DIP _ - - VNO208N1 80 2.0 TO-3 _ _ _ VNO208N2 80 2.0 TO-39 ~_ _ _ VNO208N5 80 2.0 TO-220 _ _ _ VNO208N6 80 2.0 DIP _ _ _ VNO209N 1 90 2.0 TO-3 _ _ _ VNO209N2 90 2.0 TO-39 _ _ _- VNO209N5 90 2.0 TO-220 _ _ _ VNO209N6 90 2.0 DIP _ _ VNO330N1 300 3.0 TO-3 IRF323 350 2.5 VNO330N2 300 3.0 TO-39 _ - _- **Refer to data sheet for pinout differences Siliconix IST] QOUSIOJOY SSOID UIMOdSOWNI wy i Ar ww IRF4633 O = IRF231 = IRF232 IRF233 3 RF630 = IRF634 = IRF632 = IRF2 IRF230 # IRF234 IRF232 IRF233 Ss IRF630 = IRF634 IRF632 IRF633 Siliconix 200Vmosrower Mode Advance Information These power FETs are designed especially for switching regulators, power converters, solenoid drivers ahd relay drivers. Product Summar FEATURES -_ ~ u No Second Breakdown Number | PYoss_ | Rosom | to mee m High Input Impedance IRF 230 200V 0.42 OA w Internal Drain-Source Diode IRF231 | _150V 10-3 = Very Rugged: Excellent SOA IRF232 | __200v 0.60 BA a Extremely Fast Switching IRF233 | _150V iRF630 200V 0.40 9A BENEFITS \RF631 150V 10-2208 ws Reduced Component Count IRF632__|_200V eo | BA a Improved Performance IRF633 150V a Simpler Designs D = Improved Reliability i! oot s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Oe Sees oO aoe o00v Gate Current (Peak) .......... 0. ccc cece eae + 3A IRF231,233,631,633 ...... ccc ccesc eee 150V Gate-Source Voltage ...............00 00 + 40V . Total Power Dissipation ................... 75W Drain-Gate Voltage : : IRF230,232,630,682 .........seseeeeeee 200V Linear Derating Factor .............. 0.6w/C IRF231,233,631,633 ...........cce cece eee 150V Storage and Junction oO Drain Current Continuous Temperature ............005, -55C to 150C IRF230,231,630,631 2.0... 00. c cece ee ee eee +t 9A Notes: IRF232,233,632,633 ........cccceseeeee es + 8A 1. Limited by package dissipation. 2. Pulse test 80ys to 300us, 1% duty cycle. Pulsed2........cescceeeeueeeeeceueceusees + 36A " OSS PACKAGE DIMENSIONS 0.460 (11.43) I 0.875 8 05) | 270 . . E 80 (2.04) [22.2251 0.250 6.35) OES (7.59) 585) Ta eo 0.135 MAX A (6.85) (3.429) j 0.043 (7.092) (ane) SEATING 0.038 70.965) MIN ae PLANE 1.197 (50.404) pia Sst 14.08) [1.177 , 729.896) 0438 3.54) 0.675 17. 145) 0655 (16.637) =, 0.388 aT ~N (4,775) MAX BOTH ENDS 380 (9.66) (19,176) t 2 a8 (108 0.440 wf \ ABD (70.60) 0420 (76.668) Y +t 4 7 r t INE tet 6.088 190 (2.54) 0.225 (5.715) oss 0.151 (3.855) as 542) 0.205 5.207) BOTTOM view (13.235) RMAX PIN 1 Gate PIN 1 Gate PIN 2 Source PIN 2 & TAS Drain CASE Drain PIN 3 -- Source TO-3 TO-220AB 2-12 SiliconixELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Symbol | Parameter | Part Number] Min | Typ | Max | Unit | Test Conditions Static IRF 230, 232. IRF 630,632 | 200 BVpss Drain-Source Breakdown V_ | Ves=9, Ip = 250pA IRF 231, 233 450 IRF 631, 633 Vasith) Gate Threshold Voltage All 2 4 Vs| Ves=Vos, Ip=1mA lass Gate Body Leakage Ail +100 | nA | Ves=+20V, Vog=0 loss Zero Gate Voltage Drain All 0.1 | 0.25 | 1, |Yos= Rated Vos, Ves=0 Current 02 | 1.0 Vps = Rated Vps, Vas = 0, To = 125C GS IRF 230, 231 tpsien) | Drain-Source On IRF 630, 631 me Vas = 10V, ip = 5A (Note 1) Resistance IRF 232, 233 0. 0 , IRF 632, 633 4 | 0.6 'pjon) On-State Oraln Current All 9 A} Vps= 25V, Vag = 10V (Note 1) Dynamic , Ofs Forward Transconductance All 25 45 Ss Vps = 25V, Ip = 5A (Note 1) Ciss Input Capacitance All 700 800 Reverse Transfer Cras Capacitance Alt 80 | 150 | pF | Vag=0, Vos =25V, f= 1MHz Common-Source Output Coss Capacitance All 250 | 450 taion) Turn-On Delay Time All 30 tr Rise Time Ail 50 | is | VoD=75V, In=5A, RL= 152, Ry = 259, taiotf Turn-Off Delay Time All 50 (Figure 1) te Fall Time All 40 Drain-Source Diode Characteristics Vsp Forward ON Voltage . -1.8 Vv Ig = -9A, Vag = 0 (Note 1): = =O, di =1 tre Reverse Recovery Time 650 ns 1 gues diidt = 100 Ais Note 1: Pulse Test 80us to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 Reverse Recovery Test Circuit \~ 500 di/dt Adjust (1-271) + STO 5s0uF I 1N4933 x 4 _ 1pKyAdjust i ~ | | | Ree | ~ > a | I 9 | 24000 [ + (N4001 | | 4000u F 2 > | | - 4 I | . R$ 0.250 | | | ciRcurr = { LS 0.01H PULSE UNDER | GENERATOR | Lmst _I 1a. e __le. WA P.W.=1 Ce <50 pF (Na723 DUTY CYCLE =1% s<50P tou? SCOPE FROM TRIGGER CKT Siliconix ccosdl = ZE9Ial = LEIIal = Of9IAI Cecddl = CECdal = LEI = OFC