AN48840B Low current consumption, high sensitivity CMOS Hall IC Alternating magnetic field operation (For low-speed rotation detection) 0.225 0.22+0.10 -0.05 4 M Di ain sc te on na tin nc ue e/ d 0.225 2 3 0.65 0.65 1.300.10 2.000.10 0.800.10 0.320.10 0 to 0.10 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Features 1 0.11+0.10 -0.05 The AN48840B is a Hall ICs (a magnetic sensor) which has 2 times or more sensitivity and a low current consumption of about one fiftieth compared with our conventional one. In this Hall IC, a Hall element, a offset cancel circuit, an amplifier circuit, a sample and hold circuit, a Schmidt circuit, and output stage FET are integrated on a single chip housed in a small package by IC technique. 5 1.650.10 2.100.10 Overview Unit : mm 0.13 M 0.10 1 2 Seating plane 3 High sensitivity due to offset cancel circuit and a new sample and hold circuit Small current by using intermittent action 5 (Average supply current: 56 A typ., Sampling period: 670 s typ.) Small package (SMD) CMOS inverter output (logic output form) Applications 4 SMINI-5DA (Lead-free package) S Magnetic flux density N Functional operation key, Mouse, AN48840B output level Appliances for low-speed rotation detection Block Diagram on tin isc 4 ue VCC an ce /D CLK N.C. 3 1 H en int Ma L H On/Off control 5 Out Amplifier Hall element GND N.C. L Switch Sample hold 2 Pin Descriptions Pin No. Symbol Description Pin No. Symbol 1 N.C. 4 VCC Power supply 2 GND 5 Out Output 3 N.C. Publication date: March 2009 Ground Description SPC00018BEB 1 AN48840B Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage VCC 5 V Output voltage VOUT 5 V Supply current ICC 5 mA Output current 15 mA PD 60 mW Operating ambient temperature *1 Topr -25 to +75 C Storage temperature *1 Tstg -55 to +125 C M Di ain sc te on na tin nc ue e/ d IOUT Power dissipation *1, *2 Recommended Operating Range Parameter Symbol Supply voltage VCC di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Note) *1: Except for the power dissipation, operating ambient temperature and storage temperature, all ratings are for Ta = 25C. *2:Ta = 75C. For the independent IC without a heat sink. Please use within the range of power dissipation, refering to PD Ta curve. Range Unit 2.5 to 3.5 V Electrical Characteristics Ta = 25C 2C Symbol Operating magnetic flux density 1 *1 BHL Operating magnetic flux density 2 *2 BLH Output voltage 1 VOL1 Output voltage 1 VOL2 Output voltage 2 VOH1 Output voltage 2 VOH2 Supply current 1 *3 ICCAVE Supply current 2 *3 ICC2AVE Tsam Intermittent action time 2 Tsam2 Min Typ Max Unit VCC = 3 V, VCC = 2.5 V 0.5 6 mT VCC = 3 V, VCC = 2.5 V -6 - 0.5 mT VCC = 3 V, IO = 2 mA, B = 6.0 mT 0.1 0.3 V VCC = 2.5 V, IO = 2 mA, B = 6.0 mT 0.1 0.3 V VCC = 3 V, IO = -2 mA, B = -6.0 mT 2.7 2.9 V VCC = 2.5 V, IO = -2 mA, B = -6.0 mT 2.7 2.9 V VCC = 3 V 56.0 85.0 A VCC = 2.5 V 48.0 72.0 A VCC = 3 V 490 670 850 S 513 710 890 S Min Typ Max Unit on tin Intermittent action time Conditions ue Parameter VCC = 2.5 V an ce /D isc Note) *1: Symbol BH-LS , BH-LN stands for the operating magnetic flux density where its output level varies from high to low. *2:Symbol BL-HS , BL-HN stands for the operating magnetic flux density where its output level varies from low to high. *3:ICCAVE = {ICCON x tON + ICCOFF x tOFF}/{tON + tOFF} int en Design reference data Hysteresis width Symbol Conditions BW VCC = 3 V 7 mT Supply current 3 ICCON VCC = 3 V 1.4 2.1 mA Supply current 4 ICCOFF VCC = 3 V 2.5 A Supply current 5 ICC2ON VCC = 2.5 V 1.12 1.68 mA Supply current 6 ICC2OFF VCC = 2.5 V 2.2 A Operating time tON Ta = -25C to 75C, VCC = 3 V 10 26 42 S Stop time tOFF Ta = -25C to 75C, VCC = 3 V 258 644 1 030 S Operating time 2 t2ON Ta = -25C to 75C, VCC = 2.5 V 11 27 43 S Stop time 2 t2OFF Ta = -25C to 75C, VCC = 2.5 V 270 674 1 078 S Note) 2 Ma Parameter It will operate normally in approximately 0.67 ms after power on. SPC00018BEB AN48840B Technical Data Position of a Hall element (unit in mm) Distance from a package surface to sensor part: 0.31 mm (reference value) A Hall element is placed on the shaded part in the figure. 1.0 M Di ain sc te on na tin nc ue e/ d 0.31 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 1.0 Magneto-electro conversion characteristics S Output voltage BLH BW BHL N Applied magnetic flux density B Direction of applied magnetic field Operating magnetic flux density -Ta Power dissipation AN48840B_P of package DSMINI-5DA ue en int 125 Ma Power dissipation PD (mW) 150 6.0 Sample 1 BH-L Operating magnetic flux density B (mT) isc ce /D an 175 AN48840B_Tokusei02 Operating magnetic flux density Supply voltage on tin PD Ta 200 AN48840B Main characterisitcs Independent IC without a heat sink Rth(j-a) = 833.3C/W PD = 120 mW (25C) 100 75 4.0 Sample 2 BH-L 2.0 0 -2.0 Sample 1 BL-H Sample 2 BL-H -4.0 50 Ta = 25C -6.0 25 1 2 3 4 5 Supply voltage VCC (V) 0 0 25 50 75 100 125 150 Ambient temperature Ta (C) SPC00018BEB 3 AN48840B Technical Data (continued) AN48840B Main AN48840B_Tokusei03 characterisitcs (continued) AN48840B_Tokusei04 Hysteresis width Supply voltage Operating magnetic flux density Ambient temperature 6.0 10.0 Sample 1 BH-L Ta = 25C 9.5 Sample 2 BH-L 9.0 Hesteresis width BW (mT) 4.0 2.0 Sample 2 BW 8.0 7.5 Sample 1 BW M Di ain sc te on na tin nc ue e/ d 0 8.5 -2.0 Sample 1 BL-H Sample 2 BL-H 6.0 5.5 VCC = 3 V -6.0 -50 6.5 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. -4.0 7.0 -25 0 25 50 75 100 Ambient temperature Ta (C) 5.0 125 1 2 3 4 5 Supply voltage VCC (V) AN48840B_Tokusei05 AN48840B_Tokusei06 Supply current Supply voltage 100 Low-level output voltage Supply voltage 0.035 Output = High 90 IO = 2 mA 0.03 Low-level output voltage VOL (V) Supply current ICC (A) 80 70 60 -35C 50 25C 40 85C 30 1 2 3 4 isc 0 on tin 10 -50C 0.015 0.01 0.00 5 1 AN48840B_Tokusei07 an en Sampling period Supply voltage VCC = 3 V Sampling period TS (ms) 125C 0.035 25C 0.03 0.025 6 900 0.045 0.04 5 IO = -2 mA int 0.05 4 1 000 Ma hgh-level output voltage VOH (V) 0.055 3 AN48840B_Tokusei08 high-level output voltage Supply voltage 0.06 2 Supply voltage VCC (V) ce /D Supply voltage VCC (V) 25C 0.02 0.005 ue 20 125C 0.025 -50C 0.02 800 85C 700 25C 600 -35C 500 0.015 0.01 400 0.005 0 1 2 3 4 5 300 6 Supply voltage VCC (V) 4 1 2 3 Supply voltage VCC (V) SPC00018BEB 4 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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