BUV98AV
NPN TRANSISTOR POWER MODULE
■HIGH CURRENT POWER BIPOLAR MODULE
■VERY LOW Rth JUNCTION CASE
■SPECIFIED ACCIDENTAL OVERLOAD
AREAS
■ISOLATED CASE (2500V RMS)
■EASY TO MOUNT
■LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
■MOTOR CONTROL
■SMPS & UPS
■WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
January 1995
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -5 V) 1000 V
VCEO(sus) Collector-Emitter Voltage (IB= 0) 450 V
VEBO Emitter-Base Voltage (IC=0) 7 V
I
CCollector Current 30 A
ICM Collector Peak Current (tp=10ms) 60 A
I
BBase Current 8 A
IBM Base Peak Current (tp=10ms) 30 A
P
tot Total Dissipation at Tc=25o
C 150 W
Tstg Storage Temperature -55 to 150 oC
TjMax. Operating Junction Temperature 150 oC
VISO Insulation Withstand Voltage (AC-RMS) 2500 V
ISOTOP
3
2
1
4
Pin 4 not connected
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THERMAL DATA
Rthj-case
Rthc-h Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.83
0.05
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICER Collector Cut-off
Current (RBE =5Ω)V
CE =V
CEV
VCE =V
CEV Tj= 100 oC1
8mA
mA
ICEV Collector Cut-off
Current (VBE =-5V) V
CE =V
CEV
VCE =V
CEV Tj= 100 oC0.4
4mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 2 mA
V
CEO(SUS)* Collector-Emitter
Sustaining Voltage IC=0.2A L=25mH
V
clamp =450V 450 V
hFE∗DC Current Gain IC=24A V
CE =5V 9
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=16A I
B= 3.2 A
IC=24A I
B=5A 1.5
5V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC=16A I
B= 3.2 A 1.6 V
diC/dt Rate of Rise of
On-state Collector VCC = 300 V RC=0 t
p=3µs
I
B1 =6A T
j=100o
C100 A/µs
VCE(3 µs) Collector-Emitter
Dynamic Voltage VCC = 300 V RC=15Ω
I
B1 =6A T
j= 100 oC8V
V
CE(5 µs) Collector-Emitter
Dynamic Voltage VCC = 300 V RC=15Ω
I
B1 =6A T
j= 100 oC4V
t
s
t
fStorage Time
Fall Time IC=16A V
CC =50V
V
BB =-5V L
B=1.5µH
V
clamp =300V I
B1 =3.2A
L = 750 µHT
j
=100o
C
5
0.4 µs
µs
VCEW Maximum Collector
Emitter Voltage
Without Snubber
ICWoff =30A I
B1 =6A
V
BB =-5V V
CC =50V
L = 750 µHL
B
=15µH
T
j=125o
C
350 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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Safe Operating Areas Thermal Impedance
Derating Curve Collector-Emitter Voltage Versus
Base-Emitter Resistance
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
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ReverseBiasedSOA ForwardBiasedSOA
ReverseBiasedAOA ForwardBiasedAOA
Switching Times Inductive Load Switching Times Inductive Load Versus
Temperature
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DC Current Gain Turn-on Switching Test Circuit
Turn-on Switching Waveforms
(1) Fast electronic switch (2) Non-inductive load
Turn-off Switching Test Circuit Turn-off Switching Waveforms
(1) Fast electronic switch (2) Non-inductive load
(3) Fast recovery rectifier
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157
J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193
M 37.8 38.2 1.488 1.503
N 4 0.157
O 7.8 8.2 0.307 0.322
P 5.5 0.216
B
E
H
O
N
J
K
L
M
F
A
C
G
D
ISOTOP MECHANICAL DATA
0041565
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information norforany infringementof patents or other rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents inlife supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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BUV98AV
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