Silicon Epitaxial Planar Transistor Collector 3 1 Base Features: * * * PNP 2 Emitter Epitaxial planar die construction. Complements the MMST2907A. Ultra-small surface mount package. Application: * NPN Silicon Epitaxial Planar Transistor. Maximum Rating @ Ta = 25C unless otherwise specified Parameter Symbol Value Unit Collector-Base Voltage Vcbo 75 V Collector-Emitter Voltage Vceo 40 V Emitter-Base Voltage Vebo 6 V Ic 600 mA Collector Current -Continuous Collector Dissipation Thermal resistance, junction to ambient Junction and Storage Temperature Pc 200 mW RJA 625 C/W Tj,Tstg -55 to +150 C Electrical Characteristics @ Ta = 25C unless otherwise specified Symbol Test conditions Min. Collector-base breakdown voltage Parameter V(br)cbo Ic=10A,Ie=0 75 V Collector-emitter breakdown voltage V(br)ceo Ic=10mA,Ib=0 40 V Emitter-base breakdown voltage V(br)ebo Ie=10A,Ic=0 6 Collector cut-off current Icbo Vcb=60V,Ie=0 Vcb=60V,Ie=0 Ta=150C Collector cut-off current Icex Base cut-off current Ibl Iebo Veb=3.0V,Ic=0 hfe Vce=10V,Ic=0.1mA Vce=10V,Ic=1mA Vce=10V,Ic=10mA Vce=10V,Ic=150mA Vce=10V,Ic=500mA Vce=1V,Ic=150mA Vce(sat) Ice=500mA,Ib=50mA Ice=150mA,Ib=15mA Emitter cut-off current DC current gain Collector-emitter saturation voltage Type Max. Unit V 10 nA A Vce=60V,VEB(OFF)=3.0V 10 nA Vce=60V,VEB(OFF)=3.0V 20 nA 10 nA 1 0.3 V 35 50 75 100 40 35 300 www.element14.com www.farnell.com www.newark.com Page <1> 11/09/14 V1.0 Silicon Epitaxial Planar Transistor Parameter Symbol Test conditions Vbe(sat) Ice=500mA,Ib=50mA Ice=150mA,Ib=15mA Transition frequency ft Vce=20V, Ic= 20mA,f=100MHz Output Capacitance Cobo Vcb=10V,Ie=0,f=1MHz 8 pF Input capacitance Cibo Veb=0.5V,Ic=0,f=1MHz 25 pF Noise figure NF Vce=10V,Ic=100A RS=1.0K,f=1.0kHz 4 dB Delay Time td 10 ns Base-emitter saturation voltage Rise Time tr Storage Time ts Fall Time tf Min. Type Max. Unit 2 1.2 V 300 Vcc=30V,Ic=150mA VBE(OFF)=-0.5V,IB1=15mA Vcc=30V,Ic=150mA IB1= IB2=15mA MHz 25 ns 225 ns 60 ns Package Outline Plastic surface mounted package SOT-323 Dim. Min. Max. A 1.8 2.2 B 1.15 1.35 C 1 Typical D 0.15 0.35 E 0.25 0.4 G 1.2 1.4 H 0.02 0.1 J K Soldering Footprint 0.1 Typical 2.1 2.3 All Dimensions in mm Dimensions : Millimetres Part Number Table Description Part Number Transistor, Bipolar, NPN, 40V, 600mA, SOT-323 MMST2222A-7-F Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <2> 11/09/14 V1.0