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Page <1> V1.011/09/14
Silicon Epitaxial Planar Transistor
Collector
3
2
Emitter
PNP
1
Base
Features:
• Epitaxial planar die construction.
• Complements the MMST2907A.
• Ultra-small surface mount package.
Application:
• NPN Silicon Epitaxial Planar Transistor.
Maximum Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Value Unit
Collector-Base Voltage Vcbo 75 V
Collector-Emitter Voltage Vceo 40 V
Emitter-Base Voltage Vebo 6 V
Collector Current -Continuous Ic 600 mA
Collector Dissipation Pc200 mW
Thermal resistance, junction to ambient RθJA 625 °C/W
Junction and Storage Temperature Tj,Tstg -55 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Test conditions Min. Type Max. Unit
Collector-base breakdown voltage V(bR)cbo Ic=10μA,Ie=0 75 V
Collector-emitter breakdown voltage V(bR)ceo Ic=10mA,Ib=0 40 V
Emitter-base breakdown voltage V(bR)ebo Ie=10μA,Ic=0 6 V
Collector cut-off current Icbo Vcb=60V,Ie=0
Vcb=60V,Ie=0 TA=150°C 10 nA
μA
Collector cut-off current Icex Vce=60V,VEB(OFF)=3.0V 10 nA
Base cut-off current Ibl Vce=60V,VEB(OFF)=3.0V 20 nA
Emitter cut-off current Iebo Veb=3.0V,Ic=0 10 nA
DC current gain hfe
Vce=10V,Ic=0.1mA
Vce=10V,Ic=1mA
Vce=10V,Ic=10mA
Vce=10V,Ic=150mA
Vce=10V,Ic=500mA
Vce=1V,Ic=150mA
35
50
75
100
40
35
300
Collector-emitter saturation voltage Vce(sat) Ice=500mA,Ib=50mA
Ice=150mA,Ib=15mA
1
0.3 V
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Page <2> V1.011/09/14
Silicon Epitaxial Planar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, Bipolar, NPN, 40V, 600mA, SOT-323 MMST2222A-7-F
Parameter Symbol Test conditions Min. Type Max. Unit
Base-emitter saturation voltage Vbe(sat) Ice=500mA,Ib=50mA
Ice=150mA,Ib=15mA
2
1.2 V
Transition frequency ftVce=20V,
Ic= 20mA,f=100MHz 300 MHz
Output Capacitance cobo Vcb=10V,Ie=0,f=1MHz 8 pF
Input capacitance Cibo Veb=0.5V,Ic=0,f=1MHz 25 pF
Noise gure NF Vce=10V,Ic=100μA
RS=1.0KΩ,f=1.0kHz 4 dB
Delay Time tdVcc=30V,Ic=150mA
VBE(OFF)=-0.5V,IB1=15mA
10 ns
Rise Time tr25 ns
Storage Time tsVcc=30V,Ic=150mA
IB1= IB2=15mA
225 ns
Fall Time tf60 ns
Package Outline
Plastic surface mounted package
SOT-323
Dim. Min. Max.
A 1.8 2.2
B 1.15 1.35
C1 Typical
D 0.15 0.35
E 0.25 0.4
G 1.2 1.4
H 0.02 0.1
J0.1 Typical
K 2.1 2.3
All Dimensions in mm
Soldering Footprint
Dimensions : Millimetres
