BAV199,215 - NXP - Datasheet.Directory

DATA SH EET

Product data sheet

Supersedes data of 1999 May 11 2001 Oct 12

DISCRETE SEMICONDUCTORS

BAV199

Low-leakage double diode

ok, halfpage

M3D088

2001 Oct 12 2

NXP Semiconductors Product data sheet

Low-leakage double diode BAV199

FEATURES

•Plastic SMD package

•Low leakage current: typ. 3 pA

•Switching time: typ. 0.8 µs

•Continuous reverse voltage:

max. 75 V

•Repetitive peak reverse voltage:

max. 85 V

•Repetitive peak fo rward current:

max. 500 mA.

APPLICATION

•Low-leakage current applications in

surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching,

double diode in a small SOT23 plastic

SMD package. The diodes are

connected in ser i es.

MARKING

Note

1. ∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.

∗ = W: Made in China.

TYPE NUMBER MARKING

CODE(1)

BAV199 JY∗

PINNING

PIN DESCRIPTION

1anode

2cathode

3anode; cathode

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, 4 columns 21

Top view

MAM107

LIMITING VALUES

In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).

Note

1. Device mounted o n a FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

VRRM repetitive peak reverse voltage −85 V

VRcontinuous revers e voltage −75 V

IFcontinuous forward current single diode loaded; note 1; see Fig.2 −160 mA

double diode loaded; note 1; see Fig.2 −140 mA

IFRM repetitive peak forward current −500 mA

IFSM non-repe titive peak forward

current square wave; Tj = 25 °C prior to surge;

see Fig.4

tp = 1 µs−4 A

tp = 1 ms −1 A

tp = 1 s −0.5 A

Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

2001 Oct 12 3

NXP Semiconductors Pr oduct data sheet

Low-leakage double diode BAV199

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTE RISTICS

Note

1. Device mounted o n a FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

VFforward voltage see Fig.3

IF = 1 mA −900 mV

IF = 10 mA −1 000 mV

IF = 50 mA −1 100 mV

IF = 150 mA −1 250 mV

IRreverse current see Fig.5

VR = 75 V 0.003 5nA

VR = 75 V; Tj = 150 °C 3 80 nA

Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 2−pF

trr reverse recove ry time when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.7

0.8 3µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 360 K/W

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

2001 Oct 12 4

NXP Semiconductors Pr oduct data sheet

Low-leakage double diode BAV199

GRAPHICAL DATA

Device moun ted on a FR4 printed-circuit board.

Fig.2 Maximum permissible continuous forward

current as a func tion of ambient

temperature.

handbook, halfpage

0 200

300

100

200

MLB756

100 T ( C)

amb o

(mA)

single diode loaded

double diode loaded

Fig.3 Forward current as a function of forward

voltage; per diode.

andbook, halfpage

0 1.6

300

100

200

MLB752 - 1

0.8 1.20.4

(mA)

V (V)

(1) (2) (3)

(1) Tj = 150 °C; typical values.

(2) Tj = 25 °C; typical values.

(3) Tj = 25 °C; maximum values.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.

Based on square wave currents; Tj = 25 °C prior to surge.

handbook, full pagewidth

MBG704

10 tp (µs)

IFSM

(A)

102

10−1104

102103

2001 Oct 12 5

NXP Semiconductors Pr oduct data sheet

Low-leakage double diode BAV199

VR = 75 V.

(1) Maximum values.

(2) Typical values.

Fig.5 Reverse current as a fun ction of junc tion

temperature; per diode.

handbook, halfpage

150 200

500

MLB754

100

(nA)

T ( C)

(1)

(2)

Fig.6 Diode capacitance as a function of reverse

voltage; per diode; typical values.

f = 1 MHz; Tj = 25 °C.

handbook, halfpage

01020155

MBG526

(V)

(pF)

handbook, full pagewidth

trr

(1)

IFt

output signal

trt

10%

90%

input signal

V = V I x R

RF S

R = 50

SΩIF

D.U.T.

R = 50

iΩ

SAMPLING

OSCILLOSCOPE

MGA881

Fig.7 Reverse reco very time test circuit and waveforms.

2001 Oct 12 6

NXP Semiconductors Pr oduct data sheet

Low-leakage double diode BAV199

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

2001 Oct 12 7

NXP Semiconductors Pr oduct data sheet

Low-leakage double diode BAV199

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or completing a design.

2. The product s ta tus of device(s) described in this do cument may have ch anged since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

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of such information and shall have no liability for the

consequenc es of use of such informa tion.

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reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

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not designed, au thorized or warranted to be suitable for

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equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

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property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificati on .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 12 Document orde r number: 9397 750 08764