PROFET(R) ITS612N1 Smart Two Channel Highside Power Switch For Industrial Applications Features * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in OFF-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Vbb(AZ) Vbb(on) Operating voltage Operating temperature Ta 43 5.0 ... 34 -30 ... +85 V V C both channels: each parallel On-state resistance RON 200 100 m Load current (ISO) 2.3 4.4 A IL(ISO) 4 4 A Current limitation IL(SCr) PG-TO220AB/7 Application 7 1 * C compatible power switch with diagnostic Standard feedback for 12 V and 24 V DC grounded loads in industrial applications * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits 7 1 Straight leads General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Voltage source V 3 IN1 6 IN2 5 ST ESD Overvoltage protection Current limit 1 4 Logic Voltage Level shifter sensor Rectifier 1 Logic Limit for unclamped ind. loads 1 Charge pump 2 PROFET 1 Temperature sensor 1 Gate 2 protection Current limit 2 GND 2 OUT1 Open load Short to Vbb detection 1 Charge pump 1 Level shifter Rectifier 2 1) + V bb Gate 1 protection Limit for unclamped ind. loads 2 OUT2 Temperature sensor 2 7 Load Open load Short to Vbb detection 2 Signal GND Load GND With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Infineon Technologies AG 1 2006-Mar-28 PROFET(R) ITS612N1 Pin Symbol Function 1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1 2 GND Logic ground 3 IN1 Input 1, activates channel 1 in case of logical high signal 4 Vbb 5 ST Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback: open drain, low on failure 6 IN2 Input 2, activates channel 2 in case of logical high signal 7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2 Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V 3) RI = 2 , RL= 5.3 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Junction temperature Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. one channel, IL = 2.3 A, ZL = 89 mH, 0 : both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 : Symbol Vbb Vbb Values 43 34 Unit V V 60 V IL Tj Ta Tstg Ptot self-limited +150 -30 ... +85 -40 ...+105 36 A C EAS 290 580 mJ 1.0 2.0 kV -10 ... +16 2.0 5.0 V mA 4) VLoad dump W see diagrams on page 9 Electrostatic discharge capability (ESD) (Human Body Model) IN: VESD all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) Current through input pin (DC) Current through status pin (DC) VIN IIN IST see internal circuit diagrams page 7 2) 3) 4) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Infineon Technologies AG 2 2006-Mar-28 PROFET(R) ITS612N1 Parameter and Conditions, each channel Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Unit Values typ max -3.5 -7.0 -75 Unit Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case, both channels: RthJC each channel: junction - ambient (free air): RthJA min ---- K/W Electrical Characteristics Parameter and Conditions, each channel Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 1.8 A Tj=25 C: RON each channel Tj=150 C: Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 C each channel: IL(ISO) both channels parallel: Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Infineon Technologies AG 3 1.8 3.5 160 320 2.3 4.4 -- -- --10 ton toff 80 80 200 200 400 400 s dV /dton 0.1 -- 1 V/s -dV/dtoff 0.1 -- 1 V/s IL(GNDhigh) -- 200 400 m A mA 2006-Mar-28 PROFET(R) ITS612N1 Parameter and Conditions, each channel Symbol Values min typ max Vbb(on) Vbb(under) Vbb(u rst) 5.0 3.5 -- ---- Vbb(ucp) -- Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) at Tj = 25 C, Vbb = 12 V unless otherwise specified Operating Parameters Operating voltage5) Undervoltage shutdown Undervoltage restart Tj =-40...+150C: Tj =-40...+150C: Tj =-40...+25C: Tj =+150C: Undervoltage restart of charge pump see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 6) Overvoltage protection Tj =-40...+150C: Ibb=40 mA Standby current (pin 4), VIN=0 Tj=-40...+150C: 7) Operating current (Pin 2) , VIN=5 V both channels on, Tj =-40...+150C, Operating current (Pin 2)7) one channel on, Tj =-40...+150C:, 5) 6) 7) Unit V V V 5.6 34 5.0 5.0 7.0 7.0 -- 0.2 -- V 34 33 -42 --0.5 47 43 ---- V V V V V A Ibb(off) IGND --- 90 0.6 150 1.2 mA IGND -- 0.4 0.7 mA At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG 4 2006-Mar-28 PROFET(R) ITS612N1 Parameter and Conditions, each channel Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Protection Functions8) Initial peak short circuit current limit (pin 4 to 1 or 7) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 11) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 9) Reverse battery voltage drop (Vout > Vbb) IL = -1.9 A, each channel Tj=150 C: Diagnostic Characteristics Open load detection current (included in standby current Ibb(off)) Open load detection voltage 8) 9) Values min typ max Unit IL(SCp) 5.5 4.5 2.5 9.5 7.5 4.5 13 11 7 A -- 4 -- A 41 150 --- 47 -10 -- 53 --32 V C K V -VON(rev) -- 610 -- mV IL(off) -- 30 -- A 2 3 4 V IL(SCr) VON(CL) Tjt Tjt -Vbb Tj=-40..150C: VOUT(OL) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). Infineon Technologies AG 5 2006-Mar-28 PROFET(R) ITS612N1 Parameter and Conditions, each channel Symbol Values min typ max RI 2.5 3.5 6 k VIN(T+) VIN(T-) VIN(T) IIN(off) 1.7 1.5 -1 --0.5 -- 3.5 --50 V V V A On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150C IIN(on) 20 50 90 A Delay time for status with open load td(ST OL3) -- 220 -- s Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+25C, IST = +1.6 mA: VST(low) Tj = +150C, IST = +1.6 mA: 5.4 --- 6.1 --- -0.4 0.6 V at Tj = 25 C, Vbb = 12 V unless otherwise specified Input and Status Feedback10) Input resistance Tj=-40..150C, see circuit page 7 Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 3 or 6), VIN = 0.4 V, Tj =-40..+150C after Input neg. slope (see diagram page 12) 10) Unit If a ground resistor RGND is used, add the voltage drop across this resistor. Infineon Technologies AG 6 2006-Mar-28 PROFET(R) ITS612N1 Truth Table Normal operation Channel 1 Open load Channel 2 Channel 1 Short circuit to Vbb Channel 2 both channel Overtemperature Channel 1 Channel 2 Undervoltage/ Overvoltage L = "Low" Level H = "High" Level IN2 OUT1 OUT2 ST ITS612N1 L L H H L L H L H X L L H L H X L X H L H X X X L H L H L H X L L H L H X L L H L H X X X L H X L L H H Z Z H L H X H H H L H X L L L L L X X L L H L H L H X Z Z H L H X H H H L L L X X L L L H H H H L H H L H H L H H L H H H L L H L H L H X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12) Terms V IN1 Status output bb 4 I IN1 3 V IN1 V VON2 V bb IN1 OUT1 I IN2 I ST Ibb 6 IN2 V 5 ST IN2 PROFET ST GND OUT2 1 R ST(ON) V OUT1 V OUT2 GND R ESDZD ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) IN ST 7 IGND GND I L1 I L2 2 R +5V VON1 I ESD-ZD I I I GND ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Infineon Technologies AG 7 2006-Mar-28 PROFET(R) ITS612N1 Inductive and overvoltage output clamp GND disconnect + V bb V V bb Z 4 3 IN1 Vbb OUT1 VON 6 OUT 5 PROFET GND Ibb IN2 PROFET ST GND OUT2 1 7 2 V V V IN1 IN2 ST VON clamped to 47 V typ. V GND Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Overvolt. and reverse batt. protection GND disconnect with GND pull up + V bb 4 IN1 V RI Z2 3 Logic 6 V IN2 ST V Vbb OUT1 V IN1 IN2 R ST IN1 5 IN2 PROFET ST GND OUT2 1 7 2 Z1 GND R GND Signal GND V GND V ST V bb Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ, RGND= 150 Vbb disconnect with energized inductive load Open-load detection 4 OFF-state diagnostic condition: VOUT > 3 V typ.; IN low 3 IN1 Vbb OUT1 high 6 5 IN2 PROFET ST GND OUT2 1 7 2 OFF I L(OL) V bb Logic unit Open load detection V Normal load current can be handled by the PROFET itself. OUT Signal GND Infineon Technologies AG 8 2006-Mar-28 PROFET(R) ITS612N1 Vbb disconnect with charged external inductive load Maximum allowable load inductance for a single switch off (both channels parallel) L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 L [mH] 1000 4 3 IN1 Vbb OUT1 high 6 5 IN2 PROFET OUT2 ST 1 GND D 7 2 V bb 100 If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation E bb 10 E AS IN PROFET = ELoad Vbb OUT ST GND ZL { L RL EL 1 2 ER 3 4 5 6 7 8 IL [A] Energy stored in load inductance: 2 EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L IL*RL ) EAS= 2*R *(Vbb + |VOUT(CL)|)* ln (1+ |V L OUT(CL)| Infineon Technologies AG 9 2006-Mar-28 PROFET(R) ITS612N1 Typ. transient thermal impedance chip case ZthJC = f(tp), one Channel active ZthJC [K/W] 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Transient thermal impedance chip case ZthJC = f(tp), both Channel active ZthJC [K/W] 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Infineon Technologies AG 10 2006-Mar-28 PROFET(R) ITS612N1 Timing diagrams Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN1 IN IN2 V bb ST V V OUT1 V OUT OUT2 I L ST open drain t t Figure 3a: Short circuit shut down by overtempertature, reset by cooling Figure 2a: Switching a lamp: IN IN ST IL I L(SCp) V OUT I other channel: normal operation IL(SCr) L ST t t Heating up may require several milliseconds, depending on external conditions Infineon Technologies AG 11 2006-Mar-28 PROFET(R) ITS612N1 Figure 4a: Overtemperature: Reset if Tj <Tjt Figure 6a: Undervoltage: IN IN V ST bb Vbb(u cp) Vbb(u rst) V bb(under) V OUT V OUT T J ST open drain t t Figure 6b: Undervoltage restart of charge pump Figure 5a: Open load: detection in OFF-state, turn on/off to open load VON(CL) Von IN1 on-state VOUT1 V bb(u rst) IL1 V channel 1: open load V t d(ST OL3) V V bb(over) off-state channel 2: normal operation off-state IN2 bb(o rst) bb(u cp) bb(under) t d(ST OL3) V bb ST t charge pump starts at Vbb(ucp) =5.6 V typ. td(ST,OL3) depends on external circuitry because of high impedance *) IL = 30 A typ Infineon Technologies AG 12 2006-Mar-28 PROFET(R) ITS612N1 Figure 7a: Overvoltage: IN Vbb VON(CL) Vbb(over) V bb(o rst) V OUT ST t Infineon Technologies AG 13 2006-Mar-28 PROFET(R) ITS612N1 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2006 All Rights Reserved. Package and Ordering Code All dimensions in mm Standard PG-TO220AB/7 ITS612N1 Ordering code SP000221233 Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. PG-TO220AB/7, Opt. E3230 Ordering code ITS612N1 E3230 Infineon Technologies AG Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. SP000221234 14 2006-Mar-28