TECHNICAL DATA 2N1722 JAN, JTX 2N1724 JAN, JTX MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/262 NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1722 / 2N1724 Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 250C(1) @ TC = 1000C (2) Temperature Range: Operating TOP, Tstg -65 to +200 Storage Junction 0 1) Derate linearly 20 mW/ C for TA between +250C and +1750C 2) Derate linearly 666 mW/0C for TC between +1000C and +1750C 2N1722 TO-53 0 C 2N1724 TO-61 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit V(BR)CEO 80 Vdc V(BR)EBO 10 Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Emitter-Base Breakdown Voltage IE = 10 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Base Cutoff Current VCB = 175 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc ICES 300 Adc ICBO 5.0 mAdc IEBO 400 Adc ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 2.0 Adc, VCE = 15 Vdc IC = 5.0 Adc, VCE = 15 Vdc IC = 100 mAdc, VCE = 15 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 hFE 30 15 30 120 3/98 REV: F Page 1 of 2 2N1722, 2N1724 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Collector-Emitter Saturation Voltage IC = 2.0 Adc, IB = 200 mAdc Base-Emitter Saturation Voltage IC = 2.0 Adc, IB = 200 mVdc Symbol Min. Max. Unit VCE(sat) 0.6 Vdc VBE(sat) 1.2 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 mAdc, VCE = 15 Vdc; f = 10 MHz Output Capacitance VCB = 15 Vdc, IE = 0, 100 kHz f 1.0 MHz 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 hfe Cobo 1.0 5.0 550 pF 3/98 REV: F Page 2 of 2