SEMICONDUCTOR MBRF10200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES *Average Output Rectified Current G *Repetitive Peak Reverse Voltage : VRRM=200V. K *Fast Reverse Recovery Time : trr=35ns. L M J R D N MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING N H UNIT VRRM 200 V Q 1. ANODE Repetitive Peak Reverse Voltage DIM MILLIMETERS A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + B E : IO=10A. 1 2 3 _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + 2. CATHODE 3. ANODE Average Output Rectified Current (Tc=118) (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range IO 10 A IFSM 100 A Tj -40150 Tstg -55150 TO-220IS (1) Note : average forward current of centertap full wave connection. 2 1 3 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Peak Forward Voltage (Note) Repetitive Peak SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VFM IFM=5A - - 0.95 V IRRM VRRM=Rated - - 150 IF=1.0A, di/dt=-30A/ - - 35 ns Juction to Case - - 3 /W Reverse Current (Note) Reverse Recovery Time (Note) trr Thermal Resistance (Note) Rth(j-c) Note : A value of one cell 2008. 5. 13 Revision No : 1 1/2 MBRF10200CT IF - VF IR - VR 10 REVERSE CURRENT IR (A) FORWARD CURRENT IF (A) 10 Tj =25 C 1 0.1 Tj =25 C 1 0.1 0.2 0.4 0.6 0.8 0 1 IF - TC 12 10 8 DC 6 4 RATED VOLTAGE APPLIED R JC = 3 C/W 2 0 100 110 120 150 200 IF - TA 130 140 150 CASE TEMPERATURE Tc ( C) AVERAGE FORWARD POWER DISSIPATION PF(AV) (W) 100 REVERSE VOLTAGE VR (V) AVERAGE FORWARD CURRENT I F(AV) (A) AVERAGE FORWARD CURRENT IF(AV) (A) FORWARD VOLTAGE VF (V) 50 12 RATED VOLTAGE APPLIED R JA=16 C/W 10 R JA=60 C/W (NO HEAT SINK) 8 DC 6 4 2 DC 0 0 40 80 120 160 AMBIENT TEMPERATURE TA ( C) PF(AV) - IF(AV) 10 8 6 DC 4 2 0 0 2 4 6 8 10 12 AVERAGE FORWARD CURRENT IF(AV) (A) 2008. 5. 13 Revision No : 1 2/2