2008. 5. 13 1/2
SEMICONDUCTOR
TECHNICAL DATA
MBRF10200CT
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
·Average Output Rectified Current
: IO=10A.
·Repetitive Peak Reverse Voltage
: VRRM=200V.
·Fast Reverse Recovery Time : trr=35ns.
MAXIMUM RATING (Ta=25℃)
TO-220IS (1)
A
A
B
B
C
C
D
D
E
E
F
F
G
G
H
H
1.47 MAX
1.47 MAX
J
J
K
K
L
M
L
N
NN
O
O
Q
1. ANODE
2. CATHODE
3. ANODE
R
Q
R
123
M
DIM
MILLIMETERS
10.16 0.2
+
_
15.87 0.2
+
_
2.54 0.2
+
_
0.8 0.1
+
_
3.18 0.1
+
_
0.5 0.1
+
_
3.23 0.1
+
_
13.0 0.5
+
_
2.54 0.2
+
_
4.7 0.2
+
_
6.68 0.2
+
_
2.76 0.2
+
_
3.3 0.1
+
_
12.57 0.2
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 200 V
Average Output Rectified
Current (Tc=118℃) (Note) IO10 A
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz) IFSM 100 A
Junction Temperature Tj-40～150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note : average forward current of centertap full wave connection.
3
1
2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage (Note) VFM IFM=5A - - 0.95 V
Repetitive Peak
Reverse Current (Note) IRRM VRRM=Rated - - 150 ㎂
Reverse Recovery Time (Note) trr IF=1.0A, di/dt=-30A/㎲- - 35 ns
Thermal Resistance (Note) Rth(j-c) Juction to Case - - 3 ℃/W
Note : A value of one cell
2008. 5. 13 2/2
MBRF10200CT
Revision No : 1
AVERAGE FORWARD CURRENT IF(AV) (A)
AVERAGE FORWARD CURRENT I F(AV) (A)
PF(AV) (W)
AVERAGE FORWARD CURRENT IF(AV) (A)
PF(AV) - IF(AV)
AVERAGE FORWARD POWER DISSIPATION
REVERSE CURRENT IR (µA)
REVERSE VOLTAGE VR (V)
IR - VR
IF - VF
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF (A)
IF - TCIF - TA
CASE TEMPERATURE Tc ( C) AMBIENT TEMPERATURE TA ( C)
0
0
0
0
0
0
0.1
0.2 0.4 0.6 0.8 1
1
10
50 100 150
0.1
1
10
100 110 120 130 140 150
4
2
6DC
40 80 120 160
2
8
10
4
6
12 RATED VOLTAGE APPLIED
ΘJA
ΘJA
R =16 C/W
R =60 C/W
(NO HEAT SINK)
DC
DC
2468
2
8
DC
4
6
8
10
12
10 12
10
200
RATED VOLTAGE
R = 3 C/W
ΘJC
APPLIED
j
T =25 C Tj =25 C
