STS3P6F6 P-channel 60 V, 0.13 typ., 3 A STripFETTM F6 Power MOSFET in a SO-8 package Datasheet - production data Features 8 5 7 6 Order code VDSS RDS(on)max ID STN3P6F6 60 V 0.16 @ 10 V 3A * RDS(on) * Qg industry benchmark 1 2 3 * Extremely low on-resistance RDS(on) 4 * High avalanche ruggedness SO-8 * Low gate drive power losses Applications * Switching applications Figure 1. Internal schematic diagram Description This device is a P-channel Power MOSFET developed using the 6th generation of STripFETTM technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. D (5,6,7,8) G (4) S (1,2,3) Table 1. Device summary Note: Order code Marking Package Packaging STS3P6F6 3K60 SO-8 Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. July 2014 This is information on a product in full production. DocID024437 Rev 2 1/16 www.st.com 16 Contents STS3P6F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ............................................... 8 DocID024437 Rev 2 STS3P6F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage 20 V ID Drain current (continuous) at Tpcb = 25 C 3 A ID Drain current (continuous) at Tpcb = 100 C 2 A Drain current (pulsed) 12 A PTOT Total dissipation at Tpcb = 25 C 2.7 W Tj Pstg Operating junction temperature Storage temperature -55 to 150 C Value Unit 47 C/W IDM (1) 1. Pulse width is limited by safe operating area. Table 3. Thermal data Symbol Parameter Rthj-pcb(1) Thermal resistance junction-pcb max 1. When mounted on FR-4 board of 15 Note: mm2, 2 Oz Cu, t<10 sec For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed. DocID024437 Rev 2 3/16 Electrical characteristics 2 STS3P6F6 Electrical characteristics (Tcase = 25 C unless otherwise specified). Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 250 A Min. Typ. Max. 60 Unit V VGS = 0, VDS = 60 V 1 A VGS = 0, VDS = 60 V, TC=125 C 10 A 100 nA 4 V 0.13 0.16 Min. Typ. Max. Unit - 340 - pF - 40 - pF - 20 - pF - 6.4 - nC - 1.7 - nC - 1.7 - nC Min. Typ. Max. Unit - 64 - ns - 5.3 - ns - 14 - ns - 3.7 - ns VDS = 0, VGS = 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 1.5 A Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS = 0, VDS = 48 V, f = 1 MHz VDD = 48 V, ID = 3 A, VGS = 10 V (see Figure 14) Table 6. Switching times Symbol td(on) tr td(off) tf Note: 4/16 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 48 V, ID = 1.5 A, RG = 4.7 , VGS = 10 V (see Figure 13) Fall time For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed. DocID024437 Rev 2 STS3P6F6 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 3 A ISDM (1) Source-drain current (pulsed) - 12 A VSD (2) Forward on voltage VGS = 0, ISD = 3 A - 1.1 V trr Reverse recovery time - 20 ns Qrr Reverse recovery charge - 17.8 nC IRRM Reverse recovery current ISD = 5 A, di/dt = 100 A/s VDD = 16 V, Tj = 150 C (see Figure 15) - 1.8 A ISD 1. Pulse width limited by safe operating area. 2. Pulse duration = 300 s, duty cycle 1.5% Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed. DocID024437 Rev 2 5/16 Electrical characteristics 2.1 STS3P6F6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance *,3*6$ ,' $ WK LV HD Q DU LV '6 R 5 LQ D[ LRQ \P DW HU GE S 2 LWH /LP *,3*6$ . PV PV 9'6 9 Figure 4. Output characteristics VGS= 10 V WS V AM15346v1 ID (A) VDS= 9 V 25 25 VGS= 6 V 20 Figure 5. Transfer characteristics AM15340v1 ID (A) 6LQJOHSXOVH V 7M & 7SFE & 6LQJOHSXOVH SFE 20 15 15 VGS= 5 V 10 10 5 5 VGS= 4 V 0 0 5 0 10 VDS(V) Figure 6. Gate charge vs gate-source voltage AM15341v1 VGS (V) VDD=30V 10 ID=3A 2 3 4 5 6 7 8 9 10 VGS(V) Figure 7. Static drain-source on-resistance AM15350v1 RDS(on) (m) VGS=10V 180 8 160 6 140 4 120 2 0 0 6/16 2 4 6 Qg(nC) 100 1 DocID024437 Rev 2 2 3 4 5 6 7 8 9 ID(A) STS3P6F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized V(BR)DSS vs temperature C (pF) 400 AM15342v1 350 Ciss AM15349v1 V(BR)DSS (norm) 1.15 ID = 1mA 1.10 300 250 1.05 200 1 150 100 0.95 50 0 0 20 10 30 Coss Crss 50 VDS(V) 40 Figure 10. Normalized gate threshold voltage vs temperature AM15344v1 VGS(th) (norm) 0.90 -55 -30 -5 20 45 70 95 120 TJ(C) Figure 11. Normalized on-resistance vs temperature AM15350v1 RDS(on) (norm) 2 1.10 VGS=10V 1.8 ID=250 A 1 1.6 1.4 0.90 1.2 0.80 1 0.8 0.70 0.6 0.60 -55 -30 -5 20 45 70 95 120 TJ(C) 0.4 -55 -30 -5 20 45 70 95 120 TJ(C) Figure 12. Source-drain diode forward characteristics AM15345v1 VSD (V) TJ=-55C 1.05 TJ=25C 0.95 0.85 0.75 TJ=175C 0.65 0.55 2 4 6 8 ISD(A) DocID024437 Rev 2 7/16 Test circuits 3 STS3P6F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit AM11255v1 Figure 15. Test circuit for inductive load switching and diode recovery times AM11257v1 8/16 DocID024437 Rev 2 AM11256v1 STS3P6F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. DocID024437 Rev 2 9/16 Package mechanical data STS3P6F6 Figure 16. SO-8 drawing 0016023_G_FU 10/16 DocID024437 Rev 2 STS3P6F6 Package mechanical data Table 8. SO-8 mechanical data mm Dim. Min. Typ. A Max. 1.75 A1 0.10 0.25 A2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 1.27 h 0.25 0.50 L 0.40 1.27 L1 1.04 L2 0.25 k 0 8 ccc 0.10 DocID024437 Rev 2 11/16 Package mechanical data STS3P6F6 Figure 17. (a) SO-8 recommended footprint Footprint_0016023_G_FU a. All dimensions are in millimeters. 12/16 DocID024437 Rev 2 STS3P6F6 5 Packaging mechanical data Packaging mechanical data Figure 18. SO-8 tape and reel dimensions DocID024437 Rev 2 13/16 Packaging mechanical data STS3P6F6 Table 9. SO-8 tape and reel mechanical data mm Dim. Min. A Max. - 330 13.2 C 12.8 - D 20.2 - N 60 - T 14/16 Typ. - 22.4 Ao 8.1 - 8.5 Bo 5.5 - 5.9 Ko 2.1 - 2.3 Po 3.9 - 4.1 P 7.9 - 8.1 DocID024437 Rev 2 STS3P6F6 6 Revision history Revision history Table 10. Document revision history Date Revision 22-Mar-2013 1 First release. 2 - - - - 14-Jul-2014 Changes Modified: the entire typical values in Table 6 Modified: Section 3: Test circuits Added: Section 2.1: Electrical characteristics (curves) Minor text changes DocID024437 Rev 2 15/16 STS3P6F6 IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. 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