This is information on a product in full production.
July 2014 DocID024437 Rev 2 1/16
16
STS3P6F6
P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ F6
Power MOSFET in a SO-8 package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•R
DS(on)
* Qg industry benchmark
•Extremely low on-resistance R
DS(on)
•High avalanche ruggedness
•Low gate drive power losses
Applications
•Switching applications
Description
This device is a P-channel Power MOSFET
developed using the 6
th
generation of STripFET™
technology, with a new gate structure. The
resulting Power MOSFET exhibits the lowest
R
DS(on)
in all packages.
Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be revers ed .
SO-8
1234
765
8
D (5,6,7,8)
G (4)
S (1,2,3)
Order code V
DSS
R
DS(on)max
I
D
STN3P6F6 60 V 0.16 Ω @ 10 V 3 A
Table 1. Device summary
Order code Marking Package Packaging
STS3P6F6 3K60 SO-8 Tape and reel
www.st.com
Contents STS3P6F6
2/16 DocID024437 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID024437 Rev 2 3/16
STS3P6F6 Electrical ratings
1 Electrical ratings
Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 60 V
V
GS
Gate-s ourc e vol t ag e ± 20 V
I
D
Drain current (con tinuous) at T
pcb
= 25 °C 3 A
I
D
Drain current (con tinuous) at T
pcb
= 100 °C 2 A
I
DM(1)
1. Pulse width is limited by safe operating area.
Drain current (pulsed) 12 A
P
TOT
Tot al dis si p at ion at T
pcb
= 25 °C 2.7 W
T
j
P
stg
Operating junction temperature
St orag e temp erature -55 to 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-pcb(1)
1. When mounted on FR-4 board of 15 mm
2
, 2 Oz Cu, t<10 sec
Thermal r esistance junction-pcb max 47 °C/W
Electrical characteristics STS3P6F6
4/16 DocID024437 Rev 2
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified).
Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage V
GS
= 0, I
D
= 250 µA 60 V
I
DSS
Zero gate voltage
drain current
V
GS
= 0, V
DS
= 60 V 1 µA
V
GS
= 0, V
DS
= 60 V,
T
C
=125 °C 10 µA
I
GSS
Gate-body leakage
current V
DS
= 0, V
GS
= ± 20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 4 V
R
DS(on)
Static drain-source
on-resistance V
GS
= 10 V, I
D
= 1.5 A 0.13 0.16 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
GS
= 0, V
DS
= 48 V, f = 1 MHz
- 340 - pF
C
oss
Out put capacitance - 40 - pF
C
rss
Reverse transfer
capacitance -20-pF
Q
g
Total gate charg e V
DD
= 48 V, I
D
= 3 A,
V
GS
= 10 V
(see Figure 14)
-6.4-nC
Q
gs
Gate-sou rce charge - 1.7 - nC
Q
gd
Gate-drain charge - 1.7 - nC
Tabl e 6. Swit ching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 48 V, I
D
= 1.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13)
-64-ns
t
r
Rise time - 5.3 - ns
t
d(off)
Turn-off delay time - 14 - ns
t
f
Fall time - 3.7 - ns
DocID024437 Rev 2 5/16
STS3P 6F6 E lect ri cal chara ct er ist ics
Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 3 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 12 A
V
SD
(2)
2. Puls e duration = 300 µs, duty cycle 1.5%
Forward on voltage V
GS
= 0, I
SD
= 3 A - 1.1 V
t
rr
Rever se r ec ove r y time I
SD
= 5 A, di/dt = 100 A/µs
V
DD
= 16 V, T
j
= 150 °C
(see Figure 15)
-20 ns
Q
rr
Rever se rec ove ry charge - 17.8 nC
I
RRM
Rever se r ec ove ry current - 1.8 A
Electrical characteristics STS3P6F6
6/16 DocID024437 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
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Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
I
D
15
10
5
0010 V
DS
(V)
(A)
5
20
VGS= 4 V
VGS= 5 V
VGS= 10 V
25
VGS= 6 V
AM15340v1
I
D
15
10
5
024V
GS
(V)
6
(A)
357
20
8
VDS= 9 V
910
25
AM15346v1
V
GS
6
4
2
002Q
g
(nC)
(V)
8
46
10
V
DD
=30V
I
D
=3A
AM15341v1
R
DS(on)
140
120
10014I
D
(A)
(mΩ)
26
160
180
8
3579
V
GS
=10V
AM15350v1
DocID024437 Rev 2 7/16
STS3P 6F6 E lect ri cal chara ct er ist ics
Figure 8. Capacitance variations Figure 9. Normalized V
(BR)DSS
vs temperatu re
Figure 10. Normalized gate threshold voltage vs
temperature Figure 11. Normalized on-resistance vs
temperature
Figure 12. Source -drain diode forward
characteristics
C
150
100
50
0
020 V
DS
(V)
(pF)
10 30
Ciss
Coss
Crss
40 50
200
250
300
350
400
AM15342v1
V
(BR)DSS
-55 -5 T
J
(°C)
(norm)
-30 70
20 45 95
0.90
0.95
1
1.05
1.10
1.15 I
D
= 1mA
120
AM15349v1
V
GS(th)
0.90
0.80
0.70
0.60
-55 -5 T
J
(°C)
(norm)
-30
1
70
20 45 95 120
1.10
I
D
=250 µA
AM15344v1
R
DS(on)
1
0.8
0.6
0.4-55 -5 T
J
(°C)
-30 20
1.2
1.4
V
GS
=10V
45 70 95 120
1.6
1.8
2
(norm)
AM15350v1
V
SD
26I
SD
(A)
(V)
48
0.55
0.65
0.75
0.85
0.95
1.05
T
J
=-55°C
T
J
=175°C
T
J
=25°C
AM15345v1
Test circuits STS3P6F6
8/16 DocID024437 Rev 2
3 Test circuits
Figure 13. Switching times test circuit for
resistive load Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
AM11255v1
AM11256v1
AM11257v1
DocID024437 Rev 2 9/16
STS3P6F6 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Package mechanical data STS3P6F6
10/16 DocID024437 Rev 2
Figure 16. SO-8 drawing
0016023_G_FU
DocID024437 Rev 2 11/16
STS3P6F6 Package mechanical data
Table 8. SO-8 mechanical data
Dim. mm
Min. Typ. Max.
A1.75
A1 0.10 0.25
A2 1.25
b0.31 0.51
b1 0.28 0.48
c0.10 0.25
c1 0.10 0.23
D4.804.905.00
E5.806.006.20
E1 3.80 3.90 4.00
e1.27
h0.25 0.50
L0.40 1.27
L1 1.04
L2 0.25
k0° 8°
ccc 0.10
Package mechanical data STS3P6F6
12/16 DocID024437 Rev 2
Figure 17.
(a)
SO-8 recommended footprint
a. All dimensions are in millimeters.
Footprint_0016023_G_FU
DocID024437 Rev 2 13/16
STS3P6F6 Packaging mechanical data
5 Packaging mechanical data
Figure 18. SO-8 tape and reel dimensions
Packagi ng mechan ic al data S TS3P 6F6
14/16 DocID024437 Rev 2
Table 9. SO-8 tape and reel mechanical data
Dim. mm
Min. Typ. Max.
A-330
C12.8 - 13.2
D20.2 -
N60 -
T-22.4
Ao 8.1 - 8.5
Bo 5.5 - 5.9
Ko 2.1 - 2.3
Po 3.9 - 4.1
P7.9 - 8.1
DocID024437 Rev 2 15/16
STS3P6F6 Revision history
6 Revision history
Table 10. Document revision history
Date Revision Changes
22-Mar-2013 1 First release.
14-Jul-2014 2
– Modified: the entire typical values in Table 6
– Modified: Section 3: Test circuits
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
STS3P6F6
16/16 DocID024437 Rev 2
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