AMMP-6546 18 to 40 GHz GaAs MMIC Sub-Harmonic Mixer In SMT Package Data Sheet Features Description Avago's AMMP-6546 is an easy-to-use broadband subharmonic mixer, with the LO injected at half of the frequency of that required by a conventional mixer. AMMP-6546 is similar to AMMP-6545 except that the layout is a mirror image designed to ease integration into transmitter or receiver designs. The MMIC includes an 180 balanced diode based mixer. The MMIC is fabricated using PHEMT technology. The surface mount package allows elimination of "chip & wire" assembly for lower cost. This MMIC is a cost effective alternative to multi-chip solution that have higher loss and complex assembly. Applications Microwave radio systems Satellite VSAT, DBS up/down link LMDS & Pt-Pt mmW long haul Broadband wireless access (including 802.16 and 802.20 WiMax) WLL and MMDS loops Package Diagram LO NC NC NC 1 2 3 8 6 5 NC NC IF RF Frequency : 18-40 GHz LO Frequency : 9-20 GHz IF Frequency : DC-3.5 GHz 5x5 mm Surface Mount Package Suitable for Up and Down Conversion Diode Mixer Typical Performance at RF= 21GHz Conversion Loss : 11 dB IIP3 : +12 dBm 2LO-R Leakage : -44 dBm 2LO-I Leakage : -61 dBm Typical Performance at RF= 23GHz Conversion Loss : 10 dB IIP3 : +11.7 dBm 2LO-R Leakage : -40 dBm 2LO-I Leakage : -64 dBm Typical Performance at RF= 26GHz Conversion Loss : 11 dB IIP3 : +11.8 dBm 2LO-R Leakage : -42 dBm 2LO-I Leakage : -60 dBm Functional Block Diagram 4 7 NC NC NC 1 2 3 RF LO x2 8 4 7 6 5 NC NC IF RoHS-Exemption RF PIN 1 2 3 4 5 6 7 8 FUNCTION NC NC NC RF IF NC NC LO TOP VIEW PACKAGE BASE: GND Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) : 30V ESD Human Body Model (Class 0) :100V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Please refer to hazardous substances table on page 5. Note: MSL Rating - Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6522 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. 5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies. Table 1. RF Electrical Characteristics [1,2] TA=25C, Zo=50 , LO=+15dBm, IF=2GHz Parameter RF=21GHz, LO=11.5GHz RF=23GHz, LO=12.5GHz RF=26GHz, LO=14GHz Min Min Min Conversion Loss, CL Input Third Order Intercept, IIP3 11 Typ Max 11 12 12 10.5 Typ Max 10 12 11.7 8.5 Typ Max Unit 11 12 dB 11.8 dB 2LO-R Leakage, 2LO-R -44 -35 -40 -35 -42 -30 dBm 2LO-I Leakage, 2LO-I -61 -52.5 -64 -51.7 -60 -54 dBm RF=18-30GHz, LO=15-20GHz RF=30-40GHz, LO=15-20GHz L-R Leakage, L-R -30 -35 dB L-I Leakage, L-I -35 -30 dB Note: 1. Production RF tested at 21, 23 and 26 GHz in up-converter configuration at Low Side LO. 2. All tested parameters are guaranteed with the following measurement accuracy: RF=21GHz: 1 dBm for RF-leakage, 2.0 dBm for IF-leakage, 0.5dB for Conversion Loss, 0.5 dBm for IIP3 RF=23GHz: 1 dBm for RF-leakage, 2.5 dBm for IF-leakage, 0.5dB for Conversion Loss, 0.5 dBm for IIP3 RF=26GHz: 1 dBm for RF-leakage, 2.5 dBm for IF-leakage, 0.5dB for Conversion Loss, 0.5 dBm for IIP3 Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. Parameter Min. Typical Max. Unit RF Frequency, RFfreq 18 40 GHz LO Frequency, LOfreq 9 20 GHz IF Frequency, IFfreq DC 3.5 GHz LO Power, LO +12 +22 dBm +15 Comments Absolute Minimum and Maximum Ratings Table 3. Minimum and Maximum Ratings Parameter Min. RF CW Input Power, Pin Storage Temperature, Tstg Maximum Assembly Temperature, Tmax -65 Max. Unit +25 dB +150 C 300 C Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2 Comments 60 second maximum AMMP-6546 Typical Performance Curves UP-Convertor TYP. Performance 7 9 11 13 15 17 19 21 23 25 IIP3 (dBm) C.L. (dB) (TA = +25C, Zin=Zout=50, IF Freq = 2GHz, LO Power = +15dBm unless noted) LO_13dBm LO_15dBm LO_17dBm LO_19dBm LO_20dBm Figure 2. Up-conversion IIP3 at LO = +13 to +20 dBm (high side LO) UP-Convertor TYP. Performance IIP3 (dBm) C.L. (dB) 7 9 11 13 15 17 19 21 23 25 LO_13dBm LO_15dBm LO_17dBm LO_19dBm LO_20dBm LO_13dBm LO_15dBm LO_17dBm LO_19dBm LO_20dBm 22 24 26 28 30 32 RF Frequency (GHz) 34 36 \ Figure 4. Up-conversion IIP3 at LO = +13 to +20 dBm (low side LO) Down Convertor TYP. Performance 20 LO_13dBm LO_15dBm LO_17dBm LO_19dBm LO_20dBm 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 RF (Frequency) IIP3 (dBm) C.L (dB) Figure 3. Up-conversion loss at LO = +13 to +20 dBm (low side LO) UP-Convertor TYP. Performance 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 RF (Frequency) 7 9 11 13 15 17 19 21 23 25 18 LO_13dBm LO_15dBm LO_17dBm LO_19dBm LO_20dBm 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 RF Frequency (GHz) 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 RF Frequency (GHz) Figure 1. Up-conversion loss at LO = +13 to +20 dBm (high side LO) UP-Convertor TYP. Performance 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 38 Figure 5. Down-conversion loss at LO = +13 to +20 dB (low side LO) 40 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Down Convertor TYP. Performance LO_13dBm LO_15dBm LO_17dBm LO_19dBm LO_20dBm 18 20 22 24 26 28 30 32 RF Frequency (GHz) 34 36 38 40 Figure 6. Down-conversion IIP3 at LO = +13 to +20 dBm (low side LO) Notes: 1. Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution. 3 AMMP-6546 Typical Performance Curves (TA = +25C, Zin=Zout=50, IF Freq = 2GHz, LO Power = +15dBm unless noted) AMMP-6546 2LO*-R Leakage (dBm) -30 -40 -45 -50 -55 -60 LO_12dBm LO_13dBm LO_14dBm -65 LO_15dBm LO_16dBm LO_17dBm 2LO*-I Leakage (dBm) 2*LO-R Leakage (dBm) -35 -70 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 -90 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 RF Frequency (GHz) Figure 7. 2*LO-R leakage at LO = +12 to +17 dBm L-R Isolation (dB) LO_15dBm LO_16dBm LO_17dBm Figure 8. 2*LO-I leakage at LO = +12 to +17 dBm LO_15dBm LO_16dBm LO_17dBm -30 -35 -40 20 25 L-I Isolation (dB) LO_12dBm LO_13dBm LO_14dBm -25 LO_12dBm LO_13dBm LO_14dBm 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 RF Frequency (GHz) AMMP-6546 L-R Isolation -20 AMMP-6546 2*LO-I Leakage AMMP-6546 L-I Isolation LO_12dBm LO_13dBm LO_14dBm LO_15dBm LO_16dBm LO_17dBm 30 35 40 45 -45 -50 50 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 LO Frequency Figure 9. L-R isolation at LO = +12 to +17dBm 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 LO Frequency (GHz) Figure 10. L-I isolation at LO = +12 to +17dBm Notes: 1. Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution. AMMP-6546 Application and Usage 1 LO 2 3 HP 8 4 LP 7 6 5 IF Figure 11. Simplified schematic of the mixer 4 RF Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A). AMMP-6546 Part Number Ordering Information Part Number No. of Devices Container AMMP-6546-BLKG 10 antistatic bag AMMP-6546-TR1G 100 7" Reel AMMP-6546-TR2G 500 7" Reel Names and Contents of the Toxic and Hazardous Substances or Elements in the Products Part Name Toxic and Hazardous Substances or Elements Lead (Pb) (Pb) Mercury (Hg) Hg Cadmium (Cd) Cd Hexavalent (Cr(VI)) Cr(VI) Polybrominated biphenyl (PBB) PBB 100pF capacitor : indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement as described in SJ/T 11363-2006. : indicates that the content of the toxic and hazardous substance in at least one homogeneous material of the part exceeds the concentration limit requirement as described in SJ/T 11363-2006. (The enterprise may further explain the technical reasons for the "x" indicated portion in the table in accordance with the actual situations.) SJ/T 11363-2006 SJ/T 11363-2006 "x" Note: EU RoHS compliant under exemption clause of "lead in electronic ceramic parts (e.g. piezoelectronic devices)" For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 2005-2011 Avago Technologies. All rights reserved. AV02-1662EN - July 14, 2011 Polybrominated diphenylether (PBDE) PBDE