ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse V oltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter V oltage BVCEO 30V
Collector-base V oltage BVCBO 70V
Emitter-collector V oltage BVECO 6V
Collector Current 50mA
Power Dissipation 160mW
POWER DISSIPATION
T otal Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
17/7/08
OPTION G
7.62
0.26
0.5
Dimensions in mm
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
0.26
7.62
6.62
0.5
APPROVALS
zUL recognised, File No. E91231
Package Code " GG "
'X' SPECIFICATION APPROV ALS
zVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
zCertified to EN60950 by :-
Nemko - Certificate No. P01102464
DESCRIPTION
The 4N25, 4N26, 4N27, 4N28 series of optically
coupled isolators consist of infrared light
emitting diode and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
T ape&reel - add SMT&R after part no.
zHigh Isolation V oltage (5.3kVRMS ,7.5kVPK )
zAll electrical parameters 100% tested
zCustom electrical selections available
APPLICATIONS
zDC motor controllers
zIndustrial systems controllers
zMeasuring instruments
zSignal transmission between systems of
different potentials and impedances
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
1
34
6
25
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road W est,
Park V iew Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
sales@isocom.co.uk http://www.isocom.com
10.46
9.86
DB91028
0.6
0.1 1.25
0.75
4N25X, 4N26X, 4N27X, 4N28X
4N25, 4N26, 4N27, 4N28
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Current (IR)10μAV
R = 6V
Output Collector-emitter Breakdown (BVCEO)30 V I
C = 1mA
( Note 2 )
Collector-base Breakdown (BVCBO)70 V I
C = 100μA
Emitter-collector Breakdown (BVECO) 6 V I
E = 100μA
Collector-emitter Dark Current (ICEO)50nAV
CE = 10V
Coupled Current Transfer Ratio (CTR)
4N25, 4N26 20 % 10mA IF , 10V VCE
4N27, 4N28 10 % 10mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT) 0. 5 V 50mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time, tr 2 μsV
CC = 5V , IF= 10mA
Output Fall Time, tf 2 μsR
L = 75Ω , ( FIG 1)
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
17/7/08
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Output
Output
RL = 75Ω
Input
10%
90% 90%
10%
ton
tr
FIG 1
VCC
toff
tf
DB91028m-AAS/A5
17/7/08
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
100
Forward current IF (mA)
70
80
-30 0 25 50 75 100 125
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
IF = 50mA
IC = 2mA
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
VCE = 10V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
1 2 5 10 20 50
0
1.2
1.6
2.0
2.4
2.8
VCE = 0.5V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
0.8
0.4
0
0.5
1.0
1.5 IF = 10mA
VCE = 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
Ambient temperature TA ( °C )
-30 0 25 50 75 100
DB91028m-AAS/A5
